39results about How to "Shortened diffusion channel" patented technology

The invention relates to a high-rate lithium-ion battery and a method for preparing a composite carbon cathode material for a super-capacitor battery. The method comprises the following steps: coating a surface-nano-crystallized core with a porous carbon coat provided with macro-pore / meso-pore / micro-pore three-dimensional layer pores; doping metal particles on the surface of the coat; and carrying out low-potential treatment, wherein the three steps are sequentially achieved by a template-based method, a combined method comprising dipping, chemical plating and physical mixing, and an electrochemical method of lithium pre-doping respectively. The process of the invention has the advantages of simple method and convenient operation; the prepared material has a core-coat structure and doped metallic elements, and meanwhile, the material has good performance in double-layer electric energy storage and lithium-ion intercalation and de-intercalation energy storage and effectively improves the high-rate performance and power density of the lithium-ion battery; the material meets the requirements of super-capacitor batteries in both the lithium-ion energy storage and double-layer electricenergy storage of the cathode material; accordingly, the material can be used as the cathode of a high-performance lithium-ion battery; and the material has good performance in high-rate charging / discharging, so the material has a good prospect for industrialization.

The invention provides a high temperature oxidation-resistant thermal barrier coating layer with a composite structure. The high temperature oxidation-resistant thermal barrier coating layer comprises a metal bonding layer, a first ceramic layer, a second ceramic layer, a metal deposition layer, a third ceramic layer and a fourth ceramic layer deposited at the top of a high-temperature alloy basal body in sequence; the first ceramic layer and the third ceramic layer are both isometric crystal structures; the second ceramic layer and the fourth ceramic layer are both columnar crystal structures; components of the ceramic layers are ZrO2 with stable Y2O3; components of the metal bonding layer are MCrAlY; and components of the metal deposition layer are MCrAlY or NiAl, wherein M is Ni or / and Co. The invention further provides a method for preparing the high temperature oxidation-resistant thermal barrier coating layer. The high temperature oxidation-resistant thermal barrier coating layer has multiple layers of laminated isometric crystal and columnar crystal structures, and is excellent in oxygen resistance and thermal shock resistance; and the preparation method is simple in process, excellent in repeatability and easy to operate.

The invention discloses a preparation method of an epoxy resin coating with high anticorrosion property and belongs to the technical field of anticorrosion coatings. The preparation method comprises the following steps: adopting hydrosilylation reaction to prepare 2-(3, 4-epoxy cyclohexyl) ethyltriethoxysilane (ETEO), utilizing the ETEO to carry out surface modification on nanosilicon dioxide; preparing the epoxy resin coating by adopting epoxy resin as a coating matrix, the ETEO-modified nano SiO2 as filler and polyamide (PA) as a curing agent. The preparation method disclosed by the invention has the beneficial effects that the ETEO is adopted for carrying out surface modification on the nanosilicon dioxide to lead the nanoparticles to show lipophilicity and be uniformly dispersed in theepoxy resin, so that the interfacial compatibility between the filler and the epoxy resin is improved, the shielding action is improved, simultaneously the coating is more compact, diffusion channelsof corrosive mediums are reduced, the corrosive reaction process is inhibited and further the epoxy resin coating has high anticorrosion property.

The invention relates to the technical field of semiconductor integrated circuits, in particular to a high-entropy alloy diffusion barrier layer for a Cu interconnect integrated circuit and a preparation method of the high-entropy alloy diffusion barrier layer for the Cu interconnect integrated circuit. The high-entropy alloy diffusion barrier layer for the Cu interconnect integrated circuit sequentially comprises a Si substrate layer, a high-entropy alloy intermediate coating and a Cu film from bottom to top, wherein the high-entropy alloy intermediate coating sequentially comprises a third coating, a second coating and a first coating from bottom to top; the first coating is an AlCrTaTiZrMo high-entropy alloy coating; the second coating is a pure Ti coating; and the third coating is an AlCrTaTiZrMoNx high-entropy alloy coating. According to the high-entropy alloy diffusion barrier layer for the Cu interconnect integrated circuit, improvement of the atomic bulk density is facilitated,generation of defects, such as vacancies is reduced, a diffusion channel for atoms is reduced, and the diffusion barrier performance and the heat stability of the high-entropy alloy coatings are improved.

The embodiment of the invention discloses a Zr-based high-entropy alloy coating and a preparation method thereof for improving the service life of a hot forging die, belonging to the technical field of metal surface treatment. The Zr-based high-entropy alloy coating refers to the primer layer, the transition layer and the functional layer, and the thicknesses are respectively 200-400nm, 2000-4000nm, and 1000-2000nm. The film layer of the present invention is composed of multi-principal elements with different atomic radii, and has a compact structure, which reduces the diffusion channels of atoms, improves the diffusion barrier performance of the coating, and reduces the diffusion wear of the mold, and the composition is from the substrate to the surface of the film layer. The content of nitrides in the ZrTiN~AlCrSiN transition layer increases linearly and continuously, which improves the matching of the film structure and performance. There is no composition difference interface in the film layer, which ensures high adhesion, high hardness and Simultaneous realization of high thermal shock resistance.

The invention discloses a preparation method and an application of a lithium ion battery silicon-based negative electrode material, and belongs to the field of electrochemical materials and new energyresources. The preparation method of the negative electrode material includes the steps: (1) dispersing nano-silicon and conductive macromolecules in an organic solvent to obtain mixed solution, andperforming spray-drying and high-temperature heat treatment on the mixed solution to obtain a silicon / amorphous carbon composite material; (2) collectively dispersing the silicon / amorphous carbon composite material and heteropoly acid in the organic solvent, and spray-drying mixture to obtain silicon / amorphous carbon composite material adsorbed by the heteropoly acid; (3) collectively dispersing the composite material acquired in the step (2) and the conductive macromolecules again, and spray-drying mixture to obtain the silicon-based negative electrode material with a multilayer structure ofsilicon / amorphous carbon / heteropoly acid / conductive macromolecule. The negative electrode material is simple in preparation route and has high charging and discharging capacity and excellent circulation performance and potential application prospects in the field of high-performance lithium ion batteries.

The invention discloses a core-shell structure gradient nickel-cobalt-manganese ternary positive electrode material precursor and a preparation method thereof. The ternary positive electrode materialprecursor is core-shell structure particles with the average particle size of 4-12 [mu]m, wherein an inner core is hydroxide precipitates of nickel, cobalt and manganese, a shell layer is carbonate precipitates of nickel, cobalt and manganese, the nickel content decreases gradually from the center of the core-shell structure particles to the surface of the shell layer, the manganese content increases gradually from the center of the core-shell structure particles to the surface of the shell layer, and the cobalt content is distributed evenly between the center of the core-shell structure particles and the shell layer. The invention also discloses the preparation method of the ternary positive electrode material precursor. A ternary positive electrode material obtained after the ternary positive electrode material precursor is mixed with lithium and calcined is assembled into a battery, at 0.1 C, the first discharge capacity can reach 198 mAh / g and still keeps at 182 mAh / g after the battery is circulated for 100 cycles, and the specific discharge capacity can reach 176.3 mAh / g at 5 C. The method is simple in process, low in cost and suitable for industrialized production.

The invention discloses a germanium-silicon channel fin type field effect transistor and a preparation method thereof. According to the germanium-silicon channel fin type field effect transistor, a body-on-insulator (BOI) structure is formed through thermal oxidation; a current leakage channel between a source and a drain is cut off; a leakage current of a device can be effective suppressed; the buried oxide layer area of the germanium-silicon channel fin type field effect transistor is smaller than that of an SGOI FinFET; and a heat dissipation effect can be improved. Moreover, in an oxidization process, a germanium accumulation technology is beneficial for improving a germanium component in a channel; the carrier mobility is improved; and an on state current is improved.