Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Packaging process of flexible semiconductor film electronic device

A technology of electronic devices and packaging technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, electrical components, etc., and can solve problems that affect device performance, increase production costs, and poor water-oxygen barrier performance

Active Publication Date: 2014-08-20
GUANG ZHOU NEW VISION OPTO ELECTRONICS TECH
View PDF4 Cites 29 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the poor water-oxygen barrier properties of organic films, in practice, multiple inorganic / organic films with repeated structures are often required to meet the water-oxygen barrier requirements.
This not only leads to the complex structure of the thin film encapsulation layer, but also increases the production cost.
What's more serious is that the increase in the thickness of the encapsulation layer film will lead to the deterioration of the bending resistance of the finished flexible device, which will affect the performance of the device.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Packaging process of flexible semiconductor film electronic device
  • Packaging process of flexible semiconductor film electronic device
  • Packaging process of flexible semiconductor film electronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] A packaging process for flexible semiconductor thin-film electronic devices, including the process of preparing a water-oxygen barrier layer. The water-oxygen barrier layer is formed by stacking one or more sets of water-oxygen barrier units, preferably two layers.

[0038] Each group of water and oxygen barrier units includes an organic barrier layer and an inorganic barrier layer. The surface of the organic barrier layer has an uneven structure, and the inorganic barrier layer is arranged on the upper surface of the organic barrier layer.

[0039] Due to the uneven surface structure of the organic barrier layer, the water-oxygen barrier unit composed of the inorganic barrier layer and the organic barrier layer can increase the scattering effect of water vapor and oxygen molecules when they diffuse in the organic film, and at the same time reduce the diffusion of water and oxygen molecules. Diffusion channels, thereby reducing the permeability of water and oxygen molecu...

Embodiment 2

[0045] A packaging process for flexible semiconductor thin-film electronic devices, other features are the same as in Embodiment 1, the difference is that an organic barrier layer is prepared by doping inorganic particles in a photoresist as a raw material, and the surface of the organic barrier layer has a Bubbles that are inflated by particles.

[0046] Wherein, the particle size of the inorganic particles doped in the photoresist is 0.01-10um, and the doping amount of the inorganic particles is 0.01g / mL-5g / mL. Preferably, the particle size of the inorganic particles doped in the photoresist is 2-5um, and the doping amount of the inorganic particles is 0.2g / mL.

[0047]In the invention, the bumps are formed on the surface of the organic barrier layer by doping the inorganic particles, so as to realize the formation of uneven topography on the surface of the organic barrier layer, and prepare the inorganic barrier layer on the surface of the organic barrier layer. By control...

Embodiment 3

[0049] A packaging process for a flexible semiconductor thin film electronic device, other features are the same as those of Embodiment 1 or 2, the difference is that: a base layer preparation process is also provided, that is, a base layer is prepared on the surface of the flexible semiconductor thin film electronic device to be packaged, and then A water and oxygen barrier layer is prepared on the base layer.

[0050] The material of the base layer can be Al 2 o 3 or Si 3 N 4 or SiO 2 And other inorganic materials, the thickness is usually 20~200nm. The base layer has good bonding performance with the device to be packaged, so that the water and oxygen barrier layer can be stably prepared on the base layer.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Particle sizeaaaaaaaaaa
Particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses a packaging process of a flexible semiconductor film electronic device. The packaging process comprises a water and oxygen blocking layer preparation working procedure, wherein a water and oxygen blocking layer is formed by one or more water and oxygen blocking units in a stacking mode, each water and oxygen blocking unit comprises an organic blocking layer and an inorganic blocking layer, an uneven morphology structure is arranged on the surface of each organic blocking layer, and each inorganic blocking layer is arranged on the upper surface of the corresponding organic blocking layer. The uneven morphology structure on the surface of an organic film is a regular pattern or an irregular pattern. The uneven morphology structure on the surface of each organic blocking layer is formed in a photoetching mode or physical embossing mode or through particle addition. The uneven morphology structure of the surface of each organic blocking layer is of a rectangular structure or zigzag structure or arc structure. The flexible semiconductor film electronic device is simple in manufacturing process and high in water and oxygen blocking performance, and the device can be kept to be thin while the good water and oxygen isolation performance of the device can be achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductor preparation, in particular to a packaging process for flexible semiconductor thin film electronic devices. Background technique [0002] In order to achieve a good water-oxygen insulation effect, flexible semiconductor thin film electronic devices need to be packaged after they are fabricated. In the prior art, the packaging technology for flexible semiconductor thin film electronic devices usually uses multiple materials to be stacked layer by layer, and utilizes the advantages of different materials to achieve the effect of water and oxygen isolation. [0003] At present, the most widely used material system is the inorganic / organic hybrid multi-layer film composed of inorganic thin film and organic thin film. In the inorganic / organic hybrid multilayer film structure, the inorganic film has a good water-oxygen barrier effect and plays a major role in the isolation of the multilayer film. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/56
CPCH01L21/56H01L23/31
Inventor 徐苗李洪濛邹建华陶洪王磊彭俊彪
Owner GUANG ZHOU NEW VISION OPTO ELECTRONICS TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com