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NbTaMoWNx nitride coating with high-temperature diffusion shielding performance and preparation method thereof

A technology of shielding performance and high temperature diffusion, which is applied in the field of microelectronic materials, can solve the problems of electrical performance degradation and other problems, and achieve the effects of short time consumption, good thermal stability and good diffusion shielding performance

Pending Publication Date: 2022-01-21
NANJING UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The above documents all show that adding N element to the high-entropy alloy coating, with the increase of N content, although the mechanical properties of the coating will increase, but its electrical properties will decrease, so it is necessary to reasonably control the N content in the coating , balance the mechanical and electrical properties of the coating

Method used

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  • NbTaMoWNx nitride coating with high-temperature diffusion shielding performance and preparation method thereof
  • NbTaMoWNx nitride coating with high-temperature diffusion shielding performance and preparation method thereof
  • NbTaMoWNx nitride coating with high-temperature diffusion shielding performance and preparation method thereof

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Embodiment

[0020] (1) Using DC magnetron sputtering method, in Ar and N 2 Under the atmosphere, the NbTaMoW high-entropy alloy target is used to sputter on the Si single-throw wafer to obtain the coating. The specific process parameters of DC magnetron sputtering are: target base distance 8cm, vacuum degree of sputtering chamber lower than 4.3×10 -3 Pa, the working pressure is 0.3Pa, the Ar flow is 38sccm, N 2 The flow rate is 2sccm, the sputtering power is 100W, and the sputtering time is controlled to be 8min to prepare NbTaMoWN 0.13 .

[0021] (2) Using the method of direct current magnetron sputtering, the copper conductive layer is covered on the coating prepared in step (1). The specific process parameters are: the target base distance is 8cm, the vacuum degree of the sputtering chamber is lower than 4.3×10 -3 Pa, the working pressure is 0.3Pa, the Ar flow rate is 40sccm, the sputtering power is 60W, and the sputtering time is controlled as 4min.

[0022] (3) Annealing test: A...

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Abstract

The invention discloses an NbTaMoWNx nitride coating with high-temperature diffusion shielding performance and a preparation method thereof. According to the method, NbTaMoW high-entropy alloy is used as a magnetron sputtering target material, and the NbTaMoWNx nitride coating with the high-temperature diffusion shielding performance is prepared by adopting a direct-current magnetron sputtering method under the atmosphere of Ar and N2. The NbTaMoWNx nitride coating is prepared by adopting the direct-current magnetron sputtering method, the process is simple, convenient and rapid, the repeatability is good, and the prepared NbTaMoWNx nitride coating is of an amorphous phase structure, is small in thickness, has good thermal stability, electrical performance and high-temperature diffusion shielding performance, and can be applied to an integrated circuit to serve as a diffusion shielding layer in a Cu-Si device.

Description

technical field [0001] The invention belongs to the technical field of microelectronic materials, and relates to a NbTaMoWN with high-temperature diffusion shielding performance x Nitride coatings and methods of making them. Background technique [0002] Cu has low resistivity, high resistance to electromigration and relatively low price, and is widely used in high-speed VLSI circuits. However, Cu is easy to move under elevated temperature and is compatible with Si / SiO 2 Orthogonal η-Cu 3 Si compound. The formation of silicide consumes Si, and the volume of the material increases, which leads to the breakdown of the surface discharge area and changes the electrical properties of Cu. Therefore, it is necessary to use a barrier coating (mostly used in a high temperature environment of 600-900°C) between the Si and Cu conductive layers to inhibit diffusion. At present, the most commonly used coating materials are Ta, Ti, TaN, CrN, TiAlN and so on. However, these materials...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/54C23C14/58C23C14/35
CPCC23C14/0641C23C14/0036C23C14/548C23C14/5806
Inventor 王闻晓江依诺刘睿李建亮李航
Owner NANJING UNIV OF SCI & TECH
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