The invention discloses a
laser preparation method for large-area patterned
graphene. The preparation method comprises the following steps: (1) a
solid carbon source is dispersed in an
organic solvent to obtain a dispersion liquid, and the surface of a
metal substrate is coated with the dispersion liquid in a
spinning manner to obtain a uniform
carbon coating; (2) under the condition of the protection of
inert gas, a
high power density laser beam is adopted to irradiate the
carbon coating, and carbon atoms in the
solid carbon source and
metal atoms in the
metal substrate are formed into a
solid solution under function of
irradiation; the
high power density laser beam is moved away or the
irradiation operation is stopped, when the
metal substrate is cooled, the oversaturated
solid solution is formed, and the carbon atoms are separated out of the oversaturated
solid solution and formed on the surface of the substrate to form
graphene. The invention provides a novel method which is convenient, fast, low in cost and high in efficiency and prepares the large-area patterned
graphene. The product obtained through the method can be applied to the following fields: next generation microcomputers, flat-panel displays, super-capacitors, transparent conductive electrodes, sensors, solar batteries, micro-nano electronic devices, photoelectronic devices, self-
spinning quantum devices, novel compound materials and so on.