The invention discloses a laser preparation method for large-area patterned graphene. The preparation method comprises the following steps: (1) a solid carbon source is dispersed in an organic solvent to obtain a dispersion liquid, and the surface of a metal substrate is coated with the dispersion liquid in a spinning manner to obtain a uniform carbon coating; (2) under the condition of the protection of inert gas, a high power density laser beam is adopted to irradiate the carbon coating, and carbon atoms in the solid carbon source and metal atoms in the metal substrate are formed into a solid solution under function of irradiation; the high power density laser beam is moved away or the irradiation operation is stopped, when the metal substrate is cooled, the oversaturated solid solution is formed, and the carbon atoms are separated out of the oversaturated solid solution and formed on the surface of the substrate to form graphene. The invention provides a novel method which is convenient, fast, low in cost and high in efficiency and prepares the large-area patterned graphene. The product obtained through the method can be applied to the following fields: next generation microcomputers, flat-panel displays, super-capacitors, transparent conductive electrodes, sensors, solar batteries, micro-nano electronic devices, photoelectronic devices, self-spinning quantum devices, novel compound materials and so on.