The invention discloses a
Nickel (Ni) film annealing side gate
graphene transistor preparation method based on reaction of
silicon carbide (SiC) and
chlorine gas, and mainly solves the problem that
graphene transistor gate mediums prepared through the prior art result in reduction of migration rates of channel current carriers, and can not effectively control current transferring characteristics. The achieving process of the method is that (1) SiC pattern pieces are cleaned; (2)
silicon dioxide (Sio2) masking is deposited on SiC pattern pieces after being cleaned and side gate
graphene transistor patterns are photo-etched on the Sio2; (3) the pattern pieces after being photo-etched are placed in a
quartz tube and are reacted with
chlorine (Cl2) to generate carbon films; (4) the Sio2 masking is removed; (5) a Ni film layer is deposited on an
electron beam on
carbon film pattern pieces; (6) the
carbon film pattern pieces are placed in
Argon (Ar) and are generated into side gate graphene in an annealing mode; and (7) a polyether diols (Pd) / Au layer is deposited on the
carbon film pattern pieces and is etched into
metal contact of the side gate graphene transistor. Side gate graphene transistor manufactured by the Ni film annealing side gate graphene transistor preparation method based on reaction of the SiC and the
chlorine gas is high in migration rates of current carriers, capable of accurately controlling channel current of a single transistor and avoiding
scattering effect of top gate mediums of a top gate graphene field-effect tube.