Light emitting element and electron beam deposition apparatus for manufacturing same

Abstract

A light emitting element of an embodiment may comprise: a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; and first and second electrodes placed on the first and second conductive type semiconductor layers respectively, wherein the light emitting structure includes a first mesa region, the first conductive type semiconductor layer includes a second mesa region, and the first electrode includes: a first region which is a partial region of the upper surface of the second mesa region; a second region which is the side surface of the second mesa region; and a third region arranged to extend from the edge of the side surface of the second mesa region, wherein the first, second, and third regions are formed such that the thicknesses of the first region (d1), the second region (d2), and the third region (d3) have a ratio of d1:d2:d3 = 1:0.9-1.1:1.

Description

Technical field [0001] The embodiment relates to a light-emitting element and an electron beam deposition apparatus for forming an electrode layer of the light-emitting element. Background technique [0002] Due to, for example, many advantages such as a wide and easily adjustable band gap energy, III-V compound semiconductors such as, for example, GaN and AlGaN are widely used in optoelectronics and electronic components. [0003] Specifically, through the development of element materials and thin film growth technology, for example, light-emitting elements using III-V or II-VI group compound semiconductors or laser diodes can realize light-emitting elements such as red, green and blue, and ultraviolet light. Various colors of light, and by using fluorescent materials or by combining colors, white light with high luminous efficacy can also be realized. Compared with existing light sources such as, for example, fluorescent lamps and incandescent lamps, these light-emitting element...

AI Technical Summary

Problems solved by technology

For example, in the case of a horizontal type light emitting element in which a substrate remains after growing the light emitting substrate and a vertical type light emitting element in which a metal support is coupled to one side of the light emitting structure and the substrate is removed, the substrate Or the metal standoff is too thick to make a super thin pixel

[0008] In addition, when the step coverage of the semiconductor layer or metal layer provided on the stepped portion is poor, the performance of a small light emitting element used in an ultra-thin type pixel may deteriorate

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