Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Transparent electrode based on ultrathin metal and preparation method thereof

An ultra-thin metal and transparent electrode technology, applied in the field of electrodes, can solve the problems of poor stability and insufficient photoelectric performance of ultra-thin metal transparent electrodes, and achieve the effect of good stability

Active Publication Date: 2016-03-30
CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
View PDF6 Cites 22 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the invention is to solve problems such as insufficient photoelectric performance and poor stability of ultra-thin metal transparent electrodes, to improve the stability of transparent electrodes based on ultra-thin metals and to broaden its application in organic solar cells (OPV), perovskite solar cells ( Application of PSC) and Organic Light Emitting Diode (OLED)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Transparent electrode based on ultrathin metal and preparation method thereof
  • Transparent electrode based on ultrathin metal and preparation method thereof
  • Transparent electrode based on ultrathin metal and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] A transparent electrode, using a magnetron sputtering coater as an ultra-thin film growth method, depositing ZnO on a flexible transparent substrate 1 by magnetron sputtering as a nucleation seed layer 2, and then co-sputtering Ag and Al to grow an ultra-thin metal Layer 3, CuSCN anti-reflection and anti-reflection layer 4 is deposited by spin coating, and finally forms an ultra-thin metal transparent electrode of the ZnO-Ag / Al-CuSCN system. The specific preparation method is:

[0029] (1) Ultrasound a PET sheet with a side length of 2 inches and a thickness of 0.2 mm in ethanol solution for 10 minutes, dry it with nitrogen, put it into the magnetron sputtering loading chamber immediately, and start vacuuming;

[0030] (2) Wait until the vacuum degree of the back of the reaction chamber is better than 1×10-6 Torr, put the sample into the cavity of the reaction chamber and rotate the sample holder at a speed of 10 rpm. Using Ar with a purity higher than 99.99% as the dep...

Embodiment 2

[0038] A transparent electrode, using a magnetron sputtering coater as an ultra-thin film growth method, depositing TiO on a transparent substrate 1 by magnetron sputtering 2 For the nucleation seed layer 2, a small amount of O 2 Sputter Ag to deposit oxygen-doped ultra-thin silver, deposit CuI anti-reflection and anti-reflection layer 4 by spin coating, and finally form TiO 2 -AgO x -CuI system ultra-thin metal transparent electrode, the specific preparation method is:

[0039] (1) Ultrasound the quartz glass with a side length of 2 inches and a thickness of 1 mm in ethanol solution for 10 minutes, dry it with nitrogen, put it into the magnetron sputtering loading chamber immediately, and start vacuuming;

[0040] (2) Wait until the vacuum degree of the back of the reaction chamber is better than 1×10-6 Torr, put the sample into the cavity of the reaction chamber and rotate the sample holder at a speed of 10 rpm. Using Ar with a purity better than 99.99% as the deposition ...

Embodiment 3

[0048] A transparent electrode, using a magnetron sputtering coater as an ultra-thin film growth method, depositing ZnO on a flexible transparent substrate 1 as a nucleation seed layer 2, and depositing ultra-thin silver by sputtering NiO x Anti-reflection and anti-reflection layer 4, finally forming ZnO-Ag-NiO x The ultra-thin metal transparent electrode of the system, the specific preparation method is as follows:

[0049] (1) Ultrasound the quartz glass with a side length of 2 inches and a thickness of 1 mm in ethanol solution for 10 minutes, dry it with nitrogen, put it into the magnetron sputtering loading chamber immediately, and start vacuuming;

[0050] (2) Wait until the vacuum degree of the back of the reaction chamber is better than 1×10-6 Torr, put the sample into the cavity of the reaction chamber and rotate the sample holder at a speed of 10 rpm. Using Ar with a purity higher than 99.99% as the deposition atmosphere, the ZnO is grown by radio frequency sputteri...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a transparent electrode based on an ultrathin metal and a preparation method thereof. The transparent electrode is of a four-layer structure, and comprises a transparent base (1), a nucleating seed crystal layer (2), an ultrathin metal layer (3) and an antireflection layer (4) from bottom to top in sequence. The preparation method of the transparent electrode comprises the following steps: cleaning and drying the transparent base; depositing on the transparent base to form the uncleating seed crystal layer; depositing on the uncleating seed crystal layer to form the ultrathin metal in a vacuum evaporation or electron beam deposition or magnetron sputtering deposition manner; and depositing on the ultrathin metal to form the antireflection layer in a solution spin-coating manner or solution blade-coating or vacuum evaporation or magnetron sputtering deposition manner. The transparent electrode disclosed by the invention has the characteristics of low production cost, simple technology, easy flexible integration, high stability, good surface morphology and the like.

Description

technical field [0001] The invention belongs to the technical field of electrodes, and in particular relates to an ultrathin metal-based transparent electrode and a preparation method thereof. Background technique [0002] Transparent conductive materials are widely used in various optoelectronic devices, including solar cells (OPV), image sensors, liquid crystal displays, organic electroluminescent (OLED) and touch screen panels, due to their high transmittance in visible light and low resistivity. From an application point of view, in addition to large optical transparency in the required wavelength range and appropriate conductivity, transparent electrodes should also have other advantages such as ease of processing (e.g., possibility of large-scale deposition), and the ability to form the same device ( For example, compatibility with other materials of the active layer), stability with respect to temperature, mechanical and chemical stress, and the necessary features of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/44H01L51/46H01L51/48H01L51/52H01L51/54H01L51/56
CPCH10K30/82H10K30/00H10K50/805H10K2102/00H10K71/00Y02E10/549Y02P70/50
Inventor 杨俊王婧钱彦雄彭进才汤林龙冷重钱罗伟陆仕荣魏兴战史浩飞
Owner CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com