The invention relates to a preparation method for AB-stack double-layer
graphene and equipment for the preparation method. A
solid or liquid
hydrocarbon compound is adopted as a
carbon source, the amount of volatilization is controlled, the
solid or liquid
hydrocarbon compound is brought to the surface of
copper foil through
inert carrier gas containing high
hydrogen partial pressure, and the growth of double-layer
graphite is catalyzed by using a normal-pressure
chemical vapor deposition method. The
hydrocarbon compound is a
solid carbon source, i.e., a solid hydrocarbon compound or hydrocarbon derivative; the amount of volatilization of the
carbon source is controlled through heating the
solid carbon source; or, the hydrocarbon compound is a
liquid carbon source, i.e., a liquid hydrocarbon compound or hydrocarbon derivative; and the amount of volatilization of the
liquid carbon source is controlled through controlling the volume of
inert gas introduced. According to the preparation method and the equipment for the preparation method, the synchronous growth of the double-layer
graphene is achieved, the high-quality
wafer-level AB-stack double-layer
graphene is obtained, the coverage of the AB-stack double-layer graphene can reach 100%, and the single-
crystal field-effect carrier mobility reaches up to 5,300 cm<2> / v / s. Experimental parameters are conveniently controlled, and the operation is simple,
environmentally friendly and efficient, so that the preparation method and the equipment for the preparation method are very easily extended to industrial large-scale reel-to-reel production.