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Method for preparing graphene on 3C-SiC substrate

A graphene and 3c-sic technology, applied in the field of microelectronics, can solve the problems of expensive single crystal SiC, difficulty in manufacturing graphene, uneven layers, etc., and achieve the effect of low porosity, smooth surface and low price

Inactive Publication Date: 2012-07-11
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the single crystal SiC used in the thermal decomposition of SiC is very expensive, and the grown graphene is distributed in an island shape, the number of layers is uneven, and the size is small, so it is difficult to manufacture graphene in a large area

Method used

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  • Method for preparing graphene on 3C-SiC substrate
  • Method for preparing graphene on 3C-SiC substrate
  • Method for preparing graphene on 3C-SiC substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Step 1: Remove sample surface contamination.

[0024] Clean the surface of the 4-inch Si substrate substrate, that is, use NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample; then use HCl+H 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.

[0025] Step 2: Put the Si substrate substrate into the reaction chamber of the CVD system, and evacuate the reaction chamber to 10 -7 mbar level.

[0026] Step 3: growing the carbonized layer.

[0027] Under the condition of H2 protection, the temperature of the reaction chamber is raised to the carbonization temperature of 950°C, and then the flow rate of 30ml / min C 3 h 8 , grow a layer of carbonized layer on the Si substrate, the growth time is 7min.

[0028] Step 4: growing a 3C-SiC epitaxial film on the carbonized layer.

[0029] Rapidly raise the temperature of the rea...

Embodiment 2

[0041] Step 1: Remove sample surface pollutants.

[0042] Clean the surface of the 8-inch Si substrate substrate, that is, use NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample; then use HCl+H 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.

[0043] Step 2: Put the Si substrate substrate into the reaction chamber of the CVD system, and evacuate the reaction chamber to 10 -7 mbar level.

[0044] Step 3: growing a carbonized layer.

[0045] in H 2 In the case of protection, the temperature of the reaction chamber is raised to the carbonization temperature of 1050 ° C, and then the flow rate of 30ml / min is introduced into the reaction chamber. 3 h8 , grow a layer of carbonized layer on the Si substrate, the growth time is 5min.

[0046] Step 4: growing a 3C-SiC epitaxial film on the carbonized layer.

[0047] Rapidly ...

Embodiment 3

[0055] Step A: Clean the surface of the 12-inch Si substrate, that is, use NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample; then use HCl+H 2 o 2 The reagent soaked the sample for 10 minutes, took it out and dried it to remove ionic contamination.

[0056] Step B: Put the Si substrate substrate into the reaction chamber of the CVD system, and vacuumize the reaction chamber to 10 -7 mbar level.

[0057] Step C: In H 2 In the case of protection, the temperature of the reaction chamber is raised to the carbonization temperature of 1150 ° C, and then the flow rate of 30ml / min is introduced into the reaction chamber. 3 h 8 , for 3 min to grow a carbonized layer on the Si substrate.

[0058] Step D: Rapidly raise the temperature of the reaction chamber to the growth temperature of 1300°C, and feed the SiH with flow rates of 25ml / min and 50ml / min respectively. 4 and C 3 h 8 , to...

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Abstract

The invention discloses a method for preparing graphene on a 3C-SiC substrate, which mainly solves the problems that the graphene prepared by prior technology has small area and uneven layer numbers. The steps include: developing a layer of carbonization layer as a transition on a 4 to 12 inches of Si substrate base piece, performing a development of a 3C-SiC hetero-epitaxy film at the temperature between 1150 DEG C and 1300 DEG C, having C3H8 and SiH4 as development gas sources, subjecting the 3C-SiC at the temperature between 800 DEG C and 1000 DEG C and CCl4 in gas state to a reaction so as to produce a double layer carbon film, producing a double layer grapheme by annealing the double layer carbon film for 10 to 20 minutes in the Ar gas at the temperature between 1000 DEG C to 1100 DEG C. The method for preparing graphene on the 3C-SiC substrate has the advantages that the double layer graphene has a large area, smooth surface and low void ratio, and can be used for sealing gas and liquid.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a semiconductor film material and a preparation method thereof, in particular to a method for preparing graphene using 3C-SiC as a substrate. technical background [0002] Graphene appeared in the laboratory in 2004. At that time, two scientists, Andre Gem and Kostya Novoselov, from the University of Manchester in the United Kingdom discovered that they could obtain more and more graphene in a very simple way. thinner and thinner graphite flakes. They peeled off the graphite flakes from the graphite, then glued the two sides of the flakes to a special adhesive tape, and when the tape was torn off, the graphite flakes could be split in two. Repeatedly doing this, the flakes got thinner and thinner, and eventually, they got a flake made of just one layer of carbon atoms, which is graphene. Since then, new methods of preparing graphene have emerged in an endless stream, but...

Claims

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Application Information

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IPC IPC(8): C23C16/26C30B25/02C30B25/18C30B29/02
Inventor 郭辉吕晋军张玉明张克基邓鹏飞雷天民
Owner XIDIAN UNIV
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