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Preparation method of twist angle-controllable multilayer graphene structure

A multi-layer graphene, twist angle technology, applied in the field of materials, can solve problems such as the inability to precisely control the twist angle of graphene layers and layers

Active Publication Date: 2014-09-10
NANKAI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, at present, twisted bilayer graphene is usually prepared by chemical vapor deposition or microprobe pulling, and these methods cannot accurately control the twist angle between graphene layers.

Method used

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  • Preparation method of twist angle-controllable multilayer graphene structure

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Embodiment 1

[0023] In SiO 2 / Si substrate to prepare a double-layer graphene structure with controllable twist angle, comprising the following steps:

[0024] (1) Using the method of mechanical exfoliation on Si / SiO 2 Prepare a single layer of graphene on the substrate, and use a microscope to find the target graphene, the substrate SiO 2 The layer thickness is 285nm;

[0025] (2) Under the microscope, use 800nm ​​femtosecond laser to cut the target graphene into two parts, ensure that the edges of the cut graphene are parallel to each other, the objective lens is 100X, the femtosecond laser power is 50mW, and the scanning speed is 5μm / s;

[0026] (3) Spin-coat a layer of PMMA film on the sample, the target graphene is attached on the PMMA layer, the concentration of PMMA / chloroform solution is 0.075mg / ml, the spin-coating speed is 3000rpm, and the time is 30s;

[0027] (4) Use 800nm ​​femtosecond laser under the microscope to cut the PMMA / photoresist layer into two parts in the direct...

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Abstract

The invention provides a preparation method of a twist angle-controllable multilayer graphene structure, belonging to the technical field of material, and relates to the preparation of a double-layer or multilayer graphene structure with controllable twist angle(s) between or among layers. The method comprises the steps of firstly, cutting a signal layer of graphene single crystal on an SiO2 / Si substrate into two parts, and carrying out spin coating on polymethyl methacrylate (PMMA) on the two parts; after that, removing the SiO2 layer by corrosion, and enabling the two parts of PMMA films carrying the graphene to fall off; transferring one of the two parts of PMMA films onto a new SiO2 / Si substrate, removing PMMA, and fixing the other part of PMMA film onto a glass sheet; respectively fixing the new substrate and the glass sheet; adjusting the angles and the positions of the two pieces of graphene under a micromainpulator system, and stacking the two pieces of graphene together; removing the PMMA to obtain the double-layer graphene structure with a certain twist angle; repeating the process to obtain the twist angle-controllable multilayer graphene structure. After the method is used, the angle-controllable multilayer graphene structure can be flexibly and conveniently obtained, and foundation is laid for the application of the graphene on a photoelectronic device.

Description

technical field [0001] The invention relates to a method for preparing multi-layer graphene with adjustable twist angle, in particular to a method for preparing multi-layer graphene based on direct cutting of single-layer graphene single crystals and transferring them to bases successively to form controllable overlapping twist angles , belonging to the field of materials technology. Background technique [0002] Graphene has many excellent properties in electricity, light and magnetism: such as room temperature quantum Hall effect, bipolar electric field effect, ferromagnetism, superconductivity and high electron mobility, etc.; at the same time, its mechanical properties are excellent , Young's modulus of 1.0TPa; thermal conductivity of 5300W·m-1·K-1, which is more than 10 times that of copper; almost completely transparent, with only 2.3% absorption of light. When two single-layer graphene are stacked together, the coupling between layers will affect the electrical and o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B32B9/00C01B31/04C01B32/194
Inventor 刘智波陈旭东田建国
Owner NANKAI UNIV
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