Preparation method for synchronous-grown wafer-level AB-stack double-layer graphene and equipment for preparation method

Abstract

The invention relates to a preparation method for AB-stack double-layer graphene and equipment for the preparation method. A solid or liquid hydrocarbon compound is adopted as a carbon source, the amount of volatilization is controlled, the solid or liquid hydrocarbon compound is brought to the surface of copper foil through inert carrier gas containing high hydrogen partial pressure, and the growth of double-layer graphite is catalyzed by using a normal-pressure chemical vapor deposition method. The hydrocarbon compound is a solid carbon source, i.e., a solid hydrocarbon compound or hydrocarbon derivative; the amount of volatilization of the carbon source is controlled through heating the solid carbon source; or, the hydrocarbon compound is a liquid carbon source, i.e., a liquid hydrocarbon compound or hydrocarbon derivative; and the amount of volatilization of the liquid carbon source is controlled through controlling the volume of inert gas introduced. According to the preparation method and the equipment for the preparation method, the synchronous growth of the double-layer graphene is achieved, the high-quality wafer-level AB-stack double-layer graphene is obtained, the coverage of the AB-stack double-layer graphene can reach 100%, and the single-crystal field-effect carrier mobility reaches up to 5,300 cm<2> / v / s. Experimental parameters are conveniently controlled, and the operation is simple, environmentally friendly and efficient, so that the preparation method and the equipment for the preparation method are very easily extended to industrial large-scale reel-to-reel production.

Description

technical field [0001] The invention belongs to the technical field of graphene, and relates to a method for synchronously growing wafer-level AB stacked double-layer graphene. A method for high-quality AB stacked bilayer graphene. The invention also relates to the equipment used in this method. Specifically, copper foil is used as a catalytic substrate to control the volatilization of solid or liquid hydrocarbons. Under high hydrogen partial pressure, rapid epitaxial growth of double-layer graphene single crystals is achieved, and the grains grow and fuse, and finally form a large area. High-quality AB-stacked bilayer graphene. Background technique [0002] Graphene is a single-layer (or few-layer) two-dimensional honeycomb structure composed of carbon atoms, and sp2 hybridized covalent bonds are formed between carbon and carbon, and p z Electrons constitute delocalized π-electrons on a two-dimensional scale. Graphene has high elastic modulus, high thermal conductivity...

AI Technical Summary

Problems solved by technology

These bilayer graphene preparation methods are dominated by layer-by-layer growth kinetics (also known as the inverted cake growth mode), and the result is often time-consuming and complicated. The coverage of bilayer graphene in AB stacking is below 98%.

More importantly, the double-layer graphene grown by these methods has many defects and generally low mobility, which is difficult to be applied in fields such as nanoelectronics

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