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262 results about "Low mobility" patented technology

FinFET SRAM cell using low mobility plane for cell stability and method for forming

The present invention provides a device design and method for forming the same that results in Fin Field Effect Transistors having different gains without negatively impacting device density. The present invention forms relatively low gain FinFET transistors in a low carrier mobility plane and relatively high gain FinFET transistors in a high carrier mobility plane. Thus formed, the FinFETs formed in the high mobility plane have a relatively higher gain than the FinFETs formed in the low mobility plane. The embodiments are of particular application to the design and fabrication of a Static Random Access Memory (SRAM) cell. In this application, the bodies of the n-type FinFETs used as transfer devices are formed along the {110} plane. The bodies of the n-type FinFETs and p-type FinFETs used as the storage latch are formed along the {100}. Thus formed, the transfer devices will have a gain approximately half that of the n-type storage latch devices, facilitating proper SRAM operation.
Owner:GLOBALFOUNDRIES INC

EVA (Ethylene Vinyl-Acetate) glue film special for packaging double glass solar assembly and preparation method thereof

The invention discloses an EVA (Ethylene Vinyl-Acetate) glue film special for packaging a double glass solar assembly and a preparation method thereof. The EVA glue film special for packaging the double glass solar assembly comprises the following components in percentage by weight as follows: 70-90% of ethylene vinyl-acetate copolymer, 5-20% of ethylene-octylene copolymer, 2-10% of polyethylene, 0.1-1.0% of initiator, 0.1-1.5% of antioxygen, 0.1-1.0% of ultraviolet absorbent, 0.05-1.0% of light stabilizer and 0.5-1.5% of tackifier which are grafted and pretreated and then subjected to tape casting. The glue film provided by the invention has excellent an anti-impact modulus moisture separating effect and lower mobility, and is applied to packaging the double glass solar assembly to avoid deficiencies such as bubbles and displacement of the double glass assembly, so that the performance demand of falling ball impact of the double glass assembly is met. In addition, the preparation method provided by the invention is simple in process, efficient in production and low in energy consumption, and the assembly packaged is quick to cool and the product cost is lowered.
Owner:JIANGSU LUSHAN PHOTOVOLTAIC TECH

Focusing device and method of flat high-field asymmetric waveform ion mobility spectrometer

The invention discloses a focusing device and a focusing method of a flat high-field asymmetric waveform ion mobility spectrometer. The flat high-field asymmetric waveform ion mobility spectrometer comprises an ion source, a mobility area and a detection unit, wherein an upper substrate and a lower substrate are placed in parallel in the mobility area; an upper mobility area electrode and a lower mobility area electrode are respectively arranged on the upper substrate and the lower substrate; and the upper mobility area electrode is connected with an asymmetric waveform radio frequency power supply and a direct current scanning compensation power supply. The focusing device is characterized in that at least one focusing area is arranged at the front end of the mobility area; and at least one focusing polar plate pair is arranged on each of the upper and lower substrates of each focusing area. The focusing method employing the focusing device is characterized in that voltage is applied to each focusing polar plate pair, so ions are gathered to the center before entering the mobility area; the applied voltage has two modes, namely a direct current focusing mode and a radio frequency focusing mode; in the direct current focusing mode, the same direct current voltage is applied to the focusing polar plate pair at intervals; and in the radio frequency focusing mode, sine radio frequency voltage is applied to each focusing polar plate pair, and the difference of the radio frequency voltage phases of the adjacent focusing polar plate pairs is 180 DEG.
Owner:TSINGHUA UNIV
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