57results about How to "Improved ohmic contact performance" patented technology

The invention discloses a preparing method of a solar cell piece. The preparing method comprises the steps of passivating an emitter and plating an antireflection film, wherein the antireflection film plating operation comprises the steps of, before the step of the emitter passivating, performing plating on the back surface of a silicon wafer for the first time to form a back surface antireflection film; after the emitter passivating step, performing plating on the front surface of the silicon wafer for the second time to form a front surface antireflection film. By the method in which the reflection films are respectively plated on the front surface and the back surface of the silicon wafer before and after the emitter passivating, the passivating layer material in the emitter passivating step is effectively prevented from adhering to the back surface of the silicon wafer, so the contact deformation phenomenon caused by the fact that a metal sizing agent cannot penetrate through the passivating material during sintering is effectively prevented, the ohmic contact performance of the metal sizing agent with the silicon wafer base body is improved, the filling factor of the solar cell piece is enhanced and the photoelectric conversion efficiency of the solar cell piece is improved.

The invention provides a semiconductor device. The semiconductor device forms a silicide on a protection ring for latch prevention, and avoids the protection ring from being damaged by an ESD surge. As a solving means, the semiconductor device has a structure that, a silicide with a width (W3) is not formed on a surface of a second protection ring for latch prevention, and at a side facing a transistor forming region (20).