Deep ultraviolet light emitting diode chip with high luminous efficiency and preparation method thereof
A light-emitting diode and deep ultraviolet technology, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of AlGaN material doping difficulties, lack of inversion symmetry, and reduced quantum efficiency in light-emitting diode devices, so as to improve the surface Light extraction efficiency, effect of improving ohmic contact performance
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Embodiment 1
[0017] Such as figure 1 As shown, this embodiment provides a flip-chip deep ultraviolet light-emitting diode chip with high light extraction efficiency, including: a c-plane sapphire substrate 101 thinned to a specific thickness. The Al thin film 112 arranged on the back side of the substrate, the low-temperature AlN nucleation layer 102 arranged on the front side of the substrate, the PALEAlN buffer layer 103 arranged on the low-temperature AlN nucleation layer, and the PALEAlN buffer layer arranged on the The high-temperature AlN intrinsic layer 104 on the high-temperature AlN intrinsic layer, the n-type Al disposed on the high-temperature AlN intrinsic layer x Ga 1-x N layer 105, provided on the n-type Al x Ga 1-x Al on N layer y Ga 1-y N / Al z Ga 1-z The N multi-quantum well layer 106 is arranged on the Al y Ga 1-y N / Al z Ga 1-z p-type Al on N MQW layer u Ga 1-u The N electron blocking layer 107 is arranged on the p-type Al u Ga 1-u The p-type GaN layer 108 o...
Embodiment 2
[0020] This embodiment provides a method for preparing a flip-chip deep ultraviolet light-emitting diode chip with high light extraction efficiency, which specifically includes the following steps:
[0021] (1) On the c-plane sapphire substrate, using the MOCVD process, the substrate temperature is reduced to 600°C, and a low-temperature AlN nucleation layer with a thickness of 20 nm is grown;
[0022] (2) On the low-temperature AlN nucleation layer, increase the growth temperature to 1050° C., and grow a PALEAlN buffer layer with a thickness of 200 nanometers;
[0023] (3) On the PALEAlN buffer layer, increase the growth temperature to 1300° C., and grow a high-temperature AlN intrinsic layer with a thickness of 1000 nanometers;
[0024] (4) On the high-temperature AlN intrinsic layer, keep the growth temperature at 1150 ° C, and grow n-type Al with a thickness of 2500 nm x Ga 1-x N layer, n-type Al x Ga 1-x The N layer is Si doped with a concentration of 10 20 cm -3 Al...
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