Ultraviolet light-emitting diode chip with reflection ohmic contact electrode
A technology for ohmic contact electrodes and light-emitting diodes, which is applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of difficult to obtain ohmic contact between aluminum and P-type layers.
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[0016] Please refer to figure 1 Shown, a kind of substrate of the ultraviolet light-emitting diode with reflective ohmic contact electrode of the present invention comprises:
[0017] A substrate 11, the material of the substrate 11 is sapphire or AlN;
[0018] An AlN template layer 12, which is grown on the substrate 11 by metal organic compound vapor deposition (MOCVD), and has a thickness of 0.1-10 μm;
[0019] An N-type AlGaN layer 13, grown on the AlN template layer 12 by MOCVD, with a thickness of 1-5 μm;
[0020] An active region 14 of multiple quantum wells, which is grown on the N-type AlGaN layer 13 by MOCVD, and its material is Al x Ga 1-x N / Al y Ga 1-y N-based materials, where 0≤x<y≤1;
[0021] An electron blocking layer 15, which is grown on the active region 14 of the multi-quantum well by MOCVD method, and its material is an AlGaN material with a high Al composition, and its Al composition is higher than that of the multi-quantum well active region 14, and...
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