Method for preparing solar cells
A technology of solar cells and silicon wafers, applied in the field of solar cells, can solve the problems of limited improvement, achieve the effects of preventing contact deformation, improving ohmic contact performance, and improving photoelectric conversion efficiency
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[0019] In order to solve this problem, in a typical implementation of the present invention, a kind of preparation method of solar cell sheet is provided, and this preparation method comprises the steps of passivating emitter and coating anti-reflection film, the step of coating anti-reflection film It includes: before the step of passivating the emitter, coating the back of the silicon wafer for the first time to form a back anti-reflection film; and after the step of passivating the emitter, coating the front of the silicon wafer for the second time to form a front anti-reflection film. Reflective film.
[0020] The preparation method of the above-mentioned solar cells provided by the present invention can be effectively coated with an anti-reflection film on the back of the silicon wafer before the passivation of the emitter, and then coated with an anti-reflection film on the front of the silicon wafer after the passivation of the emitter. It can effectively prevent the ma...
Embodiment 1
[0031] According to the production process of monocrystalline silicon N-type solar cells, chemical cleaning, chemical junction, plasma etching, and chemical cleaning are sequentially performed to obtain a silicon wafer with a P-N junction. First, PECVD is used to deposit a layer on the back of the silicon wafer. The thickness is 70nm silicon nitride anti-reflection film, the specific parameters of PECVD equipment are temperature 400 degrees, pressure 0.28mbar, NH 3 : SiH 4=2400:1050sccm, speed 200cm / min; then use thermal atomic layer deposition to deposit a layer of aluminum oxide passivation layer with a thickness of 5nm on the front of the silicon wafer, the specific parameters of thermal atomic layer deposition are temperature 200 degrees, ALD deposition cycle 39 cycles; then use the PECVD method to deposit a layer of silicon nitride anti-reflection film with a thickness of 80nm on the front side of the silicon wafer. The specific parameters of the PECVD equipment deposited...
Embodiment 2
[0034] According to the production process of monocrystalline silicon N-type solar cells, chemical cleaning, chemical junction, plasma etching, and chemical cleaning are sequentially performed to obtain a silicon wafer with a P-N junction. First, PECVD is used to deposit a layer on the back of the silicon wafer. The thickness is 30nm silicon nitride anti-reflection film, the specific parameters of PECVD equipment are temperature 400 degrees, pressure 0.28mbar, NH 3 : SiH 4 =2400:1050sccm, speed 450cm / min; then use thermal atomic layer deposition to deposit a layer of aluminum oxide passivation layer with a thickness of 0.5nm on the front of the silicon wafer, the specific parameters of thermal atomic layer deposition are temperature 200 degrees, ALD deposition The cycle is 7 cycles; finally, the PECVD method is used to deposit a layer of silicon nitride anti-reflection film with a thickness of 90nm on the front of the silicon wafer. The specific parameters of the PECVD equipme...
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