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Method for preparing solar cells

A technology of solar cells and silicon wafers, applied in the field of solar cells, can solve the problems of limited improvement, achieve the effects of preventing contact deformation, improving ohmic contact performance, and improving photoelectric conversion efficiency

Active Publication Date: 2016-08-24
YINGLI GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, although this method of replacing the metal paste can improve the FF of solar cells to a certain extent, the degree of improvement is limited.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0019] In order to solve this problem, in a typical implementation of the present invention, a kind of preparation method of solar cell sheet is provided, and this preparation method comprises the steps of passivating emitter and coating anti-reflection film, the step of coating anti-reflection film It includes: before the step of passivating the emitter, coating the back of the silicon wafer for the first time to form a back anti-reflection film; and after the step of passivating the emitter, coating the front of the silicon wafer for the second time to form a front anti-reflection film. Reflective film.

[0020] The preparation method of the above-mentioned solar cells provided by the present invention can be effectively coated with an anti-reflection film on the back of the silicon wafer before the passivation of the emitter, and then coated with an anti-reflection film on the front of the silicon wafer after the passivation of the emitter. It can effectively prevent the ma...

Embodiment 1

[0031] According to the production process of monocrystalline silicon N-type solar cells, chemical cleaning, chemical junction, plasma etching, and chemical cleaning are sequentially performed to obtain a silicon wafer with a P-N junction. First, PECVD is used to deposit a layer on the back of the silicon wafer. The thickness is 70nm silicon nitride anti-reflection film, the specific parameters of PECVD equipment are temperature 400 degrees, pressure 0.28mbar, NH 3 : SiH 4=2400:1050sccm, speed 200cm / min; then use thermal atomic layer deposition to deposit a layer of aluminum oxide passivation layer with a thickness of 5nm on the front of the silicon wafer, the specific parameters of thermal atomic layer deposition are temperature 200 degrees, ALD deposition cycle 39 cycles; then use the PECVD method to deposit a layer of silicon nitride anti-reflection film with a thickness of 80nm on the front side of the silicon wafer. The specific parameters of the PECVD equipment deposited...

Embodiment 2

[0034] According to the production process of monocrystalline silicon N-type solar cells, chemical cleaning, chemical junction, plasma etching, and chemical cleaning are sequentially performed to obtain a silicon wafer with a P-N junction. First, PECVD is used to deposit a layer on the back of the silicon wafer. The thickness is 30nm silicon nitride anti-reflection film, the specific parameters of PECVD equipment are temperature 400 degrees, pressure 0.28mbar, NH 3 : SiH 4 =2400:1050sccm, speed 450cm / min; then use thermal atomic layer deposition to deposit a layer of aluminum oxide passivation layer with a thickness of 0.5nm on the front of the silicon wafer, the specific parameters of thermal atomic layer deposition are temperature 200 degrees, ALD deposition The cycle is 7 cycles; finally, the PECVD method is used to deposit a layer of silicon nitride anti-reflection film with a thickness of 90nm on the front of the silicon wafer. The specific parameters of the PECVD equipme...

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PUM

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Abstract

The invention discloses a preparing method of a solar cell piece. The preparing method comprises the steps of passivating an emitter and plating an antireflection film, wherein the antireflection film plating operation comprises the steps of, before the step of the emitter passivating, performing plating on the back surface of a silicon wafer for the first time to form a back surface antireflection film; after the emitter passivating step, performing plating on the front surface of the silicon wafer for the second time to form a front surface antireflection film. By the method in which the reflection films are respectively plated on the front surface and the back surface of the silicon wafer before and after the emitter passivating, the passivating layer material in the emitter passivating step is effectively prevented from adhering to the back surface of the silicon wafer, so the contact deformation phenomenon caused by the fact that a metal sizing agent cannot penetrate through the passivating material during sintering is effectively prevented, the ohmic contact performance of the metal sizing agent with the silicon wafer base body is improved, the filling factor of the solar cell piece is enhanced and the photoelectric conversion efficiency of the solar cell piece is improved.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a method for preparing solar cells. Background technique [0002] Solar cells have been widely used in various fields, and their good stability and mature process flow are the basis for their large-scale application. When producing crystalline silicon solar cells, it is first necessary to clean the silicon wafers used to make crystalline silicon solar cells. The surface of the silicon wafers is structured through chemical cleaning, and then the cleaned silicon wafers are subjected to a diffusion process. The silicon wafers are treated with boron The diffusion process forms a P-N junction, and then performs a peripheral etching process on the silicon wafer forming the P-N junction, so as to remove the conductive layer formed on the edge of the silicon wafer during the diffusion process. It is then subjected to a chemical cleaning process to remove the glass layer formed on the surface ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02168Y02E10/50Y02P70/50
Inventor 郎芳杨德成史金超李高非胡志岩熊景峰
Owner YINGLI GRP
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