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Solar aluminum conductor paste and preparation method thereof

An aluminum conductor, solar energy technology, applied in cable/conductor manufacturing, semiconductor devices, conductive materials dispersed in non-conductive inorganic materials, etc. problems, to achieve the effect of improving ohmic contact performance and electrical conductivity, improving electrical conductivity and photoelectric conversion efficiency, and improving ohmic contact performance

Active Publication Date: 2017-02-22
JIANGSU RUIDE NEW ENERGY TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In actual production, the trivalent organometallic compound has better dispersion, but it is easy to volatilize during the sintering process, which affects the density of the aluminum layer and is not conducive to the improvement of the electrical performance of the cell.
In addition, since the mixed form of boron, gallium, indium, and thallium metal elements in the aluminum paste is directly dispersed, the above-mentioned micropowders are similar to aluminum powders, and both have high surface energy, which is prone to agglomeration of metal powders. The density of thallium is greater than that of aluminum powder, so the doping of dopant in the silicon aluminum alloy layer is not uniform, which is not conducive to the formation of ohmic contact

Method used

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  • Solar aluminum conductor paste and preparation method thereof
  • Solar aluminum conductor paste and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1-4

[0028] The preparation method of embodiment 1-4 solar aluminum conductor paste includes the following steps:

[0029] S1: Put the glass powder, additives and grinding solvent in a ball mill or sand milling equipment, and continue to grind for 5 hours. The dried powder passes through a 500-mesh sieve to obtain an additive coated with lead-free glass powder on the surface;

[0030] S2: Stir uniformly the coating additives obtained from S1, the remaining glass powder, aluminum powder and the organic carrier, and place them in a grinder to grind to prepare solar aluminum conductor paste.

[0031] In the preparation method of Examples 1-4, the mass ratio of glass powder to additives in S1 of Examples 1, 3, and 4 is 1:1. The addition amount of glass powder in Example 2 is less than the addition amount of additives, so the glass powder and All additives are added to the grinding equipment.

Embodiment 5

[0033] The additive of embodiment 5 is formed by equal weight combination of gallium element and indium element;

Embodiment 6

[0034] The additive of Example 6 is gallium phosphide;

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Abstract

The invention discloses solar aluminum conductor paste. The solar aluminum conductor paste comprises the constituents based on percent by mass: 60-80% of aluminum powder, 0.5-10% of lead-free glass powder, 18-36% of organic carrier and 0.01-5% of additive, wherein the additive is selected from at least one of elements B, Ga and In, an inorganic compound containing Ga and In and a solid solution, and the additive is a coating additive of which a surface is coated with the lead-free glass powder by grinding. In the solar aluminum conductor paste, the additive is more uniformly dispersed in the aluminum paste by improving a morphology and contact mode of the additive in the aluminum paste, the glass powder is more stable to coat around the aluminum paste, a surface crystal boundary morphology of a solid solution crystal after smashing is maintained, ohmic contact performance of an aluminum layer and a silicon wafer is favorably improved, and the conductivity and the photoelectric conversion efficiency of a solar cell are further improved. The invention also discloses a preparation method of the solar aluminum conductor paste.

Description

Technical field [0001] The invention relates to the technical field of electronic pastes, in particular to a solar aluminum conductor paste and a preparation method thereof. Background technique [0002] In the manufacture of crystalline silicon solar cells, the aluminum paste is printed on the back of the silicon wafer by using a silk screen. After drying, sintering, cooling and other processes, a silicon-aluminum alloy layer can be formed between the silicon substrate and the aluminum layer to eliminate the silicon wafer. The Schottky barrier between the electrode and the electrode achieves a good ohmic contact, and the silicon epitaxial growth layer doped with aluminum, that is, the back field layer, is formed on the cooled silicon wafer to increase the open circuit voltage of the battery and improve the photoelectric conversion effectiveness. The width of the sintering process window of the back aluminum paste and the production cost are important indicators for considering ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/22H01L31/0224H01B13/00
CPCH01B1/22H01B13/00H01L31/022425Y02E10/50
Inventor 戈士勇
Owner JIANGSU RUIDE NEW ENERGY TECH
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