39results about How to "Doping effective" patented technology

The present invention belongs to the field of electrochemical power source material preparing technology, and is especially preparation process of oxygen place doped lithium ferric phosphate powder. The oxygen place doped lithium ferric phosphate as positive pole material in lithium ion cell has the molecular expression LiFeP(MxO4-x), and is prepared through mixing the dopant and the mother body material and sintering the mixture, or through solid phase reaction of the dopant and the mother body material. The preparation process has effective doping in the oxygen place of mother body material and the prepared material can raise the capacity and the circular discharge performance of the cell effectively and thus can find its wide application as positive pole material in secondary lithium ion cell and power cell.

The invention provides an n-type boron nitride film / p-type monocrystalline silicon heterogeneous pn junction prototype device and a preparation method thereof, and belongs to the field of semiconductor materials. The preparation method comprises the following steps: preparing a boron nitride film on a p-type (100) surface monocrystalline silicon substrate by adopting a magnetron sputtering method; carrying out in-situ carbon doping by using a co-sputtering means to obtain an n-type boron nitride film; and respectively manufacturing silver electrodes on one side of the n-type boron nitride film and one side of the p-type monocrystalline silicon to obtain the n-type boron nitride film / p-type monocrystalline silicon heterogeneous pn junction prototype device. According to the invention, the n-type conductive layer with excellent electrical properties is obtained by performing in-situ carbon doping on the boron nitride film, and the electrical properties of the n-type conductive layer are remarkably improved compared with those of non-doped and silicon-doped boron nitride films; and a pn junction prototype device with good rectification characteristics is obtained.

The invention discloses a preparation method of a lithium and nitrogen co-doped diamond film. The preparation method comprises the following steps: coating a layer of suspension liquid containing a lithium source on the surface of a substrate on which a diamond film is pre-deposited; after drying, putting into a reaction chamber of a heater chemical vapor deposition system, heating in a hydrogen atmosphere to melt powder containing the lithium source and allowing lithium to be dispersed in diamond; subsequently further depositing the lithium and nitrogen co-doped diamond film in a nitrogen-containing atmosphere by adopting a heater chemical vapor deposition method. The lithium and nitrogen co-doped diamond film has low surface work function, is liable to emit electrons under the effect of heat and the effect of an electric field, and can be applied to thermo-electron energy transforming components and field emission display components.

The invention discloses a nitrogen and sulfur codoped silica gel supported TiO2 photocatalyst and a preparation method thereof. The method comprises the steps: preparing sol by taking tetraethoxysilane and butyl titanate as precursor raw materials for supporting TiO2 and taking mixed acid of sulfuric acid and nitric acid as a nitrogen and sulfur doped source and an initiator for sol-gel reaction; standing in constant-temperature water bath or standing at room temperature for ageing to prepare a silicon-titanium copolymer containing sulfate radical and nitrate radical; sintering under nitrogen atmosphere to prepare the nitrogen and sulfur codoped silica gel supported TiO2 photocatalyst. The photocatalyst prepared by the method has high purity and crystallinity; nitrogen and sulfur codoped TiO2 crystal particles are positioned in a silica gel mesoporous framework structure, so N and S are effectively codoped, the photoresponse range of the TiO2 photocatalyst is widened, and the aims of photocatalytic red shift and sunlight efficient utilization are fulfilled.

The invention provides a bolometer and a manufacturing method thereof. The resistance value of thermistors of the bolometer can accord with design specification by changing the structures and the doping density of the thermistors so as to meet the application requirement. The structure thereof comprises a base, a support layer positioned above the base, a lower electrode manufactured on the support layer, thermistors manufactured on the lower electrode, an upper electrode covering the thermistors and an absorbing layer manufactured on the upper electrode, wherein the base and the support layer are parallel to each other and are arranged at intervals, and the upper electrode, the lower electrode and the thermistors are electrically connected in parallel. The thermistors are arranged at intervals between the upper electrode and the lower electrode. The structural arrangement enables the resistance value of the thermistors to be adjustable in a large range, optimizes the performances of devices and meets different application requirements, thereby greatly improving the flexibility of design.

The invention provides a preparation method of three-dimensional porous heteroatom-doped graphene. The preparation method comprises the following steps: (1) uniformly dispersing graphene oxide, a heteroatom precursor, a non-noble metal salt and a template agent into a solvent, thereby obtaining a precursor after heating, stirring and drying; (2) performing high-temperature roasting treatment on the precursor in the presence of inert gases, thereby obtaining solid products; and (3) treating the solid products by a blended solution of hydrofluoric acid and hydrochloric acid, removing the template and metals by one step, and then, re-heating to obtain the three-dimensional porous heteroatom-doped graphene. The invention further provides a method adopting the three-dimensional porous heteroatom-doped graphene to prepare a membrane electrode combined body. The three-dimensional porous heteroatom-doped graphene disclosed by the invention has a high specific surface area, and has a good application prospect in the fields such as fuel batteries, metal-air batteries as well as supercapacitors.

The invention discloses a lightly-doped region formation method and a semiconductor device fabrication method. The lightly-doped region formation method comprises the steps of sequentially laminating an insulation layer, a dielectric layer and a semiconductor layer on a surface of a substrate, wherein a channel is formed in the semiconductor layer; forming ion injection regions at two sides of the channel in the semiconductor layer; injecting impurity ions to the ion injection regions; and irradiating the semiconductor layer by using laser so that the impurity ions are diffused and lightly-doped regions are formed at two sides of the channel. Through the abovementioned mode, the problem that leakage current of an NMOS (N-channel Metal Oxide Semiconductor) structure is difficult to suppress and the activation temperature is relatively high can be solved.

A silver-doped nano anatase phase TiO 2 The preparation method of the powder belongs to the field of material preparation; the preparation method: 1) the AgNO 3 The solution is mixed with sodium borohydride solution to obtain a suspension; 2) Metal titanium powder is mixed with deionized water; 3) The suspension is added to the mixture of titanium powder and deionized water, heated, pressurized and kept warm; 4) The obtained The solid-liquid mixture was centrifuged, washed, and dried to obtain silver-doped anatase TiO 2 Powder; the process temperature of the present invention is low, only need to heat the solution to boiling, without heating to high temperature, and the process is simple, efficient, environmentally friendly, without introducing other foreign impurities, the obtained anatase phase TiO 2 The powder has high purity, and high-purity products can be prepared, which greatly improves the doping efficiency of silver.

The invention provides a preparation method of nitrogen-doped silicon-aluminum immobilized TiO2 porous ceramic. The preparation method comprises the steps of: carrying out reaction with water-soluble inorganic silicon salt as a silicon source, water-soluble inorganic titanium salt as a titanium source, water-soluble inorganic aluminum salt as an aluminum source, urea as a nitrogen source and cetyl trimethyl ammonium bromide as a template agent to obtain a suspension D, transferring the suspension to a hydrothermal kettle, carrying out hydrothermal reaction, after hydrothermal reaction is finished, washing, carrying out suction filtering to obtain filter mud, granulating and shaping the filter mud, then drying to obtain nitrogen-doped silicon-aluminum immobilized TiO2 precursor, and sintering the nitrogen-doped silicon-aluminum immobilized TiO2 precursor to obtain the nitrogen-doped silicon-aluminum immobilized TiO2 porous ceramic. According to the invention, urea is used as the nitrogen source, under hydrothermal high-temperature and high-pressure conditions, N-H bond in urea can replace oxygen in Ti-O to firmly bond in a chemical bond form, thus effective doping is achieved; and in addition, lattice distortion generated due to nitrogen entering TiO2 lattice can broaden photoresponse range of TiO2 and increase photocatalysis activity under visible light.

The present invention relates to a fluorine-containing fluoride coating, which comprises the following raw materials in parts by weight: 100 parts of vinyl resin, 10-20 parts of pigment and filler of fluoride composition, 0.5-3 parts of secondary co-modified polyaniline / montmorillonite, 30-50 parts of organic solvent, 0.2-0.4 part of epichlorohydrin, and 0.1-0.3 part of toughening agent; wherein the secondary co-modified polyaniline / montmorillonite is through acid-modified montmorillonite, which is beneficial to aniline Intercalation into the sheet of montmorillonite, synthesizing primary acid co-modified polyaniline / montmorillonite, doping with ammonia hydrolysis and then performing secondary acid doping to obtain polyaniline / montmorillonite with better conductivity ; The coating of the present invention has excellent corrosion resistance.

The invention relates to the technical field of optoelectronics, in particular to a photoconductive organic semiconductor detector. The invention discloses a near-infrared visible light OPV iodine-doped photovoltaic type organic detector, which is composed of various functional layers arranged on a substrate, including a substrate (1), a metal or transparent conductive electrode (3), a hole The transmission layer (4) and the organic photosensitive layer (2), etc., are characterized in that the material of the photosensitive layer (2) is an OPV material of a solar cell that has a photoelectric response to near-infrared after doping iodine acceptors. This photosensitive material is a typical OPV material commonly used in solar cells. In order to realize the response to the near-infrared band, effective iodine acceptor doping is carried out. The invention has the advantages of easy realization of large area and large array, controllable resistance of photosensitive layer material, no need for refrigeration, flexible processing and other advantages, and has important application value in military, civilian and some specific fields.

The invention discloses a preparation method of a tin oxide film, and belongs to the technical field of film preparation. The preparation method is as follows: a fluoride of antimony is used as a doping source, a chloride of tin is used as a starting raw material, after mixed atomization, the fluoride of antimony and the chloride of tin are deposited on the surface of a high temperature resistant substrate to from a transparent fluorine-antimony co-doping tin oxide thin film with good functions. According to the method, in a SnO2 crystal structure, fluoride ions replace part of oxygen ion positions, antimony ions replace part of tin ion positions for doping, and higher carrier density is obtained, so that the tin oxide film is better in electrical conductivity, atmosphere sensitivity, transmittance and the like than single fluorine or single antimony doping film, and is a very advanced and potential semiconductor functional thin film material.

The invention discloses a method for preparing a sulfur-doped hypoxia type TiO2 photocatalyst. Sodium silicate serves as a silicon source, titanium sulfate serves as a titanium source, sulfate radicals serve as a doped sulfur source, sodium sulfide serves as a reducing agent, first a silica gel immobilized TiO2 / TiS2 copolymer is prepared through an ultrasound copolymerization method, the mixing amount of the sulfate radicals is changed, a product precursor is synthesized by in-situ symbiosis at 140-160 DEG C, and finally a silica gel immobilized sulfur-doped hypoxia type TiO2 photocatalyst (S / hypoxia type TiO2) material is prepared through sintering at 650-800 DEG C under the protective atmosphere of N2. Obtained results indicate that the goals of O vacancy defect and S effective doping are achieved successfully, and good conditions are created for photocatalysis red shift of the TiO2 photocatalyst and efficient utilization of solar light. Besides, the product is high in purity and good in crystal condition.

The invention relates to a preparation method of a cerium-doped copper sulphide quantum dot nanometer material, and belongs to the technical field of preparation of quantum dot materials. The preparation method comprises the following steps of preparing to-be-reacted solution, preparing the cerium-doped copper sulphide material by gas and liquid chemical reaction, purifying of the product and the like. The preparation method has the characteristics that the cost is low, the experiment device is simple, the operation is simple, and the like. The prepared cerium-doped copper sulphide quantum dot nanometer material has the advantages that the specific capacitance is higher; the cerium-doped copper sulphide quantum dot nanometer material can be used for preparing supercapacitor electrodes; the important value is realized in studying of energy storage equipment; the repeatability of the prepared sample is good; the cerium-doped copper sulphide quantum dot nanometer material is suitable for industrial large-scale production.