An OPV iodine-doped photovoltaic organic detector for near-infrared visible light

A visible light and near-infrared technology, applied in the field of optoelectronics, can solve the problems of no photoactivity, little or not many photosensitive layers of infrared detectors, etc., and achieve the effects of outstanding novelty, considerable market prospects and controllable performance.

Active Publication Date: 2018-05-29
KUNMING INST OF PHYSICS
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Problems solved by technology

[0002] Research on organic infrared detectors has only been carried out in recent years. Since 1999, a new organic material, a metal-dithiolene complex, was synthesized by the Polytechnic University of Milan, Italy, and reported in 2004. After the photoelectric response performance of similar materials at 600-900 nanometers, more and more researches have been done on organic infrared materials, but general organic / polymer materials have no photoactivity in the infrared region of the wavelength range greater than 1 micron.
So far, many researches on organic semiconductor materials are still mainly focused on the research on luminescent materials and solar cells. There are very few researches on infrared semiconductor materials and devices. There are not many types of organic infrared semiconductor materials at present. They are used as infrared The photosensitive layer of the detector is even more tiny

Method used

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  • An OPV iodine-doped photovoltaic organic detector for near-infrared visible light
  • An OPV iodine-doped photovoltaic organic detector for near-infrared visible light
  • An OPV iodine-doped photovoltaic organic detector for near-infrared visible light

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Embodiment 1

[0023] Example 1, such as Figure 1-6 Shown:

[0024] An OPV iodine-doped photovoltaic organic detector for near-infrared and visible light, composed of various functional layers arranged on a substrate, including a substrate 1, a metal or transparent conductive electrode 3, a hole transport layer 4 and an organic photosensitive layer 2 etc., substrate 1, prepare metal or transparent conductive electrode 3 by magnetron sputtering or electron beam evaporation on the substrate, spin-coat hole transport layer 4 on the transparent conductive electrode, and then spin-coat organic material on the hole transport layer. The photosensitive layer 2, and finally the upper metal electrode 3 is prepared on the photosensitive layer by electron beam evaporation.

[0025] The material of the substrate 1 in the present invention is cheap glass.

[0026] Concrete preparation process is as follows:

[0027] (1) Deposit an ITO film of about 180 nm by magnetron sputtering on a glass substrate; ...

Embodiment 2

[0038] A kind of near-infrared broad-spectrum detector, its preparation process is compared with embodiment 1, this method except the change of the doping mode of iodine, other do not change, such as doping mode is:

[0039] The incorporation of iodine in the OPV material is not directly mixed into the photosensitive material of OPV, but after a uniform undoped photosensitive layer is obtained by spin coating, 10 mg of iodine is weighed, and the mass of iodine is placed in the Put it into a petri dish, heat it on a heating plate with a temperature of 150°C, place the undoped substrate with a photosensitive layer directly above the petri dish at a certain distance, the area of ​​the substrate is 2.5cm×2.5cm, Under the volatilization of steam, it can be processed until the iodine volatilization is complete. Afterwards, it was treated in a furnace at a temperature of 150° C. for 15 minutes, and then a metal Al electrode was prepared by an electron beam method, so that a near-infr...

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Abstract

The invention relates to the technical field of optoelectronics, in particular to a photoconductive organic semiconductor detector. The invention discloses a near-infrared visible light OPV iodine-doped photovoltaic type organic detector, which is composed of various functional layers arranged on a substrate, including a substrate (1), a metal or transparent conductive electrode (3), a hole The transmission layer (4) and the organic photosensitive layer (2), etc., are characterized in that the material of the photosensitive layer (2) is an OPV material of a solar cell that has a photoelectric response to near-infrared after doping iodine acceptors. This photosensitive material is a typical OPV material commonly used in solar cells. In order to realize the response to the near-infrared band, effective iodine acceptor doping is carried out. The invention has the advantages of easy realization of large area and large array, controllable resistance of photosensitive layer material, no need for refrigeration, flexible processing and other advantages, and has important application value in military, civilian and some specific fields.

Description

technical field [0001] The invention relates to the technical field of optoelectronics, in particular to a photoconductive organic semiconductor detector. Background technique [0002] Research on organic infrared detectors has only been carried out in recent years. Since 1999, a new organic material, a metal-dithiolene complex, was synthesized by the Polytechnic University of Milan, Italy, and reported in 2004. After the photoelectric response performance of similar materials at 600-900 nanometers, more and more researches have been done on organic infrared materials, but general organic / polymer materials have no photoactivity in the infrared region in the wavelength range greater than 1 micron. So far, many researches on organic semiconductor materials are still mainly focused on the research on luminescent materials and solar cells. There are very few researches on infrared semiconductor materials and devices. There are not many types of organic infrared semiconductor mat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/46
CPCH10K85/141Y02E10/549
Inventor 唐利斌姬荣斌项金钟田品孔金丞袁俊太云见赵鹏
Owner KUNMING INST OF PHYSICS
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