The invention provides a
microstructure silicon-based material, a preparation method thereof and a
semiconductor device. The preparation method comprises the steps of providing a
silicon wafer and
microsphere solution; prepraring the
microsphere solution into a
microsphere template by employing a self-
assembly mode; transferring the self-
assembly template to the surface of the
silicon wafer, and carrying out annealing heat treatment; and
etching the silicon
wafer by taking microspheres as masks and employing a reaction
ion beam
etching technology, washing the silicon wafer, and
coating film, thereby forming a
metal nanocone-shaped
microstructure. According to the preparation method provided by the invention, firstly, the microsphere template obtained by employing the self-
assembly mode is taken as the
mask, and compared with the
mask prepared by a special
mask preparation technology in the prior art, the mask provided by the invention has the advantages of simple in preparation method and relatively low in cost; and secondly, according to the preparation method provided by the invention, the silicon wafer is etched by employing the relatively cheap reaction
ion beam
etching technology, and compared with the micro-
nano machining methods such as a focusing
ion beam etching technology,
electron beam
lithography and
laser direct writing in the prior art, the preparation method has the advantages of simple technology and relatively low cost.