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219 results about "Ceramic thin films" patented technology

High frequency and multi frequency band ultrasound transducers based on ceramic films

A design and a manufacturing method of ultrasound transducers based on films of ferro-electric ceramic material is presented, the transducers being particularly useful for operating at frequencies above 10 MHz. The designs also involve acoustic load matching layers that provides particularly wide bandwidth of the transducers, and also multiple electric port transducers using multiple piezoelectric layers, for multi-band operation of the transducers over an even wider band of frequencies that covers ~4 harmonics of a fundamental band. A transceiver drive system for the multi-port transducers that provides simple selection of the frequency bands of transmitted pulses as well as transmission of multi-band pulses, and reception of scattered signals in multiple frequency bands, is presented. The basic designs can be used for elements in a transducer array, that provides all the features of the single element transducer for array steering of the focus and possibly also direction of a pulsed ultrasound beam at high frequencies and multi-band frequencies. The manufacturing technique can involve tape-casting of the ceramic films, deposition of the ceramic films onto a substrate with thick film printing, sol-gel, or other deposition techniques, where manufacturing methods for load matching layers and composite ceramic layers are described.
Owner:PREXION

Ceramic thin film on various substrates, and process for producing same

A thin film of an amorphous silicon-based material on a substrate. The thin film has the property of any one of a carrier concentration of 1013 to 1018 cm−3 in a depletion zone next to the substrate, an electron mobility of 5 to 30 cm2V−1s−1, a dangling bond concentration of 1012 to 1019 cm−3, no solvent-related defects, or a residual hydrogen concentration of 0 to 25 atomic %. The thin film may be used to fabricate many devices such as solar cells, light-emitting diodes, transistors, photothyristors, and integrated monolithic devices on a single chip.
Owner:BISHOP'S UNIVERSITY +1

Method for performing electroless nickel plating on surface of aluminum nitride ceramic

The invention provides a method for performing electroless nickel plating on the surface of aluminum nitride ceramic, belonging to the ceramic thin-film metallization field. The method comprises the following specific steps: 1) polishing the surface of aluminum nitride with a machinery; coarsening the aluminum nitride substrate with mixed acid or alkali, completely cleaning away the residual acid or alkali; 3) sensitizing the coarsened substrate in stannous chloride solution, activating in palladium chloride solution or performing activation without palladium; 4) weighting a certain amount of nickel sulphate, sodium hypophosphite, sodium citrate, sodium acetate, lactic acid, thiourea and sodium dodecyl sulfate in sequence to prepare a chemical plating solution; and 5) adjusting the pH value of the solution to 4.0-6.0 with acid or alkali, heating the solution to 70-95 DEG C, and placing the prepared substrate in the solution to perform electroless nickel plating. The invention is characterized in that the electroless nickel plating can be performed on the surface of the aluminum nitride ceramic substrate which is difficult to plate; and a certain amount of surfactant is added so that the plating becomes denser and smoother, the binding force between the plating and the substrate is increased, and the solderability of the plating is better.
Owner:UNIV OF SCI & TECH BEIJING

Metal ceramic composite substrate and manufacturing method for same

The invention is applied to the field of substrates, provides a metal ceramic composite substrate and a manufacturing method for the same, and aims to solve the problems of low thermal conductivity of a metal substrate and low bonding properties of a metal ceramic composite substrate in the prior art. The metal ceramic composite substrate comprises a metal substrate, a ceramic layer, a metal line layer and a metal ceramic transition layer, wherein the ceramic layer is arranged on the metal substrate; the metal line layer is arranged on the surface of the ceramic layer; the metal ceramic transition layer is formed on the metal substrate, and is connected with the ceramic layer; the ceramic layer is positioned between the metal ceramic transition layer and the metal line layer; the metal ceramic transition layer consists of metal and metal nitrides; and the ceramic layer consists of a ceramic thin film. The ceramic layer is used for improving the thermal conductivity of the substrate, and the metal ceramic transition layer is arranged to improve the bonding properties between the ceramic layer and the metal substrate to improve bonding reliability.
Owner:SHENZHEN HOYOL OPTO ELECTRONICS

Ceramic thin film thermocouple and manufacture method thereof

The invention discloses a ceramic thin film thermocouple and a manufacture method thereof. The ceramic thin film thermocouple comprises a thermocouple conductive ceramic thin film comprising a ceramic thermode layer, wherein the ceramic thermode layer comprises a first thermode and a second thermode which are arranged in a mirror symmetry mode along the center line of the thermocouple conductive ceramic thin film. Both the first thermode and the second thermode comprise lap joint transverse ends for performing lap joint of a hot connection point between the thermodes, lead transverse ends connected with leads and transition vertical portions for enabling the lap joint transverse ends to be connected with the lead transverse ends. The lap joint transverse end of the first thermode and the lap joint transverse end of the second thermode are in lap joint partially to form the hot connection point of the thermocouple. Compared with the ordinary K-shaped thermocouple, the ceramic thin film thermocouple has the advantages of being wide in temperature measurement range and adaptive to oxidation and acid-base environments. Compared with other thermocouples made of high temperature resistant materials, such as platinum and rhodium, the ceramic thin film thermocouple is low in cost in the same temperature measurement range, and applicable to temperature measurement of extreme environments in the fields of space flight and aviation and the like.
Owner:DALIAN JIAOTONG UNIVERSITY

Medium-and-low-temperature solar selective absorption thin film and preparation method thereof

The invention discloses a medium-and-low-temperature solar selective absorption thin film. The medium-and-low-temperature solar selective absorption thin film mainly comprises a diffusion blocking layer, an absorption layer and an anti-reflection layer, which are sequentially deposited on a substrate with an infrared reflection function, or the medium-and-low-temperature solar selective absorption thin film mainly comprises an infrared reflection layer, the diffusion blocking layer, the absorption layer and the anti-reflection layer, which are sequentially deposited on the substrate, wherein the infrared reflection layer comprises the components of copper (Cu), molybdenum (Mo) or silver (Ag); the diffusion blocking layer comprises the composite component of chromium and nitrogen; the absorption layer consists of one or two of chromium simple substance / chromium oxide multi-component phase and chromium simple substance / chromium oxynitride multi-component phase; and the anti-reflection layer is a silicon dioxide (SiO2) ceramic thin film. The medium-and-low-temperature solar selective absorption thin film is high in solar spectrum absorption rate, low in infrared emissivity, high in heat stability and high in weather resistance and can be used in medium-and-low-temperature atmospheric environment of below 278 DEG C for a long time. The invention also discloses a preparation method for the medium-and-low-temperature solar selective absorption thin film. The preparation method employs a magnetron sputtering method and is simple in process, low in cost, high in stability and applicable to industrial large-area preparation.
Owner:NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI

Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices

InactiveUS7005303B2Easy to transportImproved stoichiometry, morphology and ferroelectric characterSemiconductor/solid-state device manufacturingChemical vapor deposition coatingHigh densityGas phase
A low temperature CVD process for deposition of bismuth-containing ceramic thin films suitable for integration to fabricate ferroelectric memory devices. The bismuth-containing film can be formed using a tris(β-diketonate) bismuth precursor. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.
Owner:ENTEGRIS INC

Packaging device of light-emitting diode and packaging method thereof

The invention relates to the field of photoelectron packaging and discloses a packaging device of a light-emitting diode and a packaging method thereof. A packaging structure comprises LED light emitting chips arranged on the front face of a metallic substrate, holes which are formed on the metallic substrate and penetrate the front and back faces of the metallic substrate, and first insulating layers arranged on the back face of the metallic substrate and periphery of the holes. Because the LED light emitting chips are directly arranged on the metallic substrate, heat can be fast transferred and the heat dispersion performance is high. The holes are used as electrodes and independent electric conduction channels are formed between the holes; therefore, the insulating property is reliable; the packaging device can be used for both single-chip packaging and multi-chip packaging. Ceramic thin films formed by a micro-arc oxidation method or a rigid oxidation method are in-situ growth film layers, have high joint strength, thermal expansivity similar to that of the substrate and excellent heat matching property.
Owner:SHENZHEN UNIV

Preparation method for multilayer ceramic capacitor

The invention discloses a preparation method for a multilayer ceramic capacitor. The preparation method comprises the following steps of preparing ceramic thin films and ceramic thin films on which inner electrode patterns are printed, wherein a plurality of ceramic thin films on which the inner electrode patterns are printed are laminated to obtain a laminating unit; respectively laminating a plurality of ceramic thin films on two opposite side faces of the laminating unit, and pressing in and cutting the ceramic thin films to obtain laminating bodies; laminating, pressing in and cutting the plurality of ceramic thin films to obtain green blocks; placing the laminating bodies and the green blocks on a load bearing board, wherein the laminating bodies are placed in a middle area, and the green blocks encircle the peripheries of the laminating bodies, and performing agglomeration discharging and sintering on the laminating bodies to obtain a ceramic body; after chamfering the ceramic body, attaching two outer electrodes at two ends of the ceramic body. According to the preparation method for the multilayer ceramic capacitor, during sintering, sintering-aid components in the green blocks volatilize, so that local atmosphere with higher volatile concentration is formed at the peripheries of the green bodies, and the ceramic body obtained by sintering is uniform, dense and good in consistency.
Owner:GUANGDONG FENGHUA ADVANCED TECH HLDG

Method for preparing multilayer ceramic capacitor

The invention discloses a method for preparing a multilayer ceramic capacitor. The method includes the steps that an isolation thin film is prepared; ceramic thin films are prepared; the ceramic thin films are stacked, and a first substrate is obtained; the ceramic thin films on which inner electrode patterns are printed are prepared; the ceramic thin films on which the inner electrode patterns are printed are stacked, a stacking unit is obtained, the ceramic thin films are stacked on the two sides of the stacking unit respectively, and a second substrate is obtained; the first substrate, the isolation thin film and the second substrate are sequentially stacked and then laminated, and a third substrate is obtained; the third substrate is cut, and the second substrate is completely cut off to form multiple stacked bodies; adhesion removal and sintering are conducted on the third substrate, and the stacked bodies are sintered into a ceramic body; the ceramic body is separated and then chamfered, and two outer electrodes are attached to the two ends of the ceramic body. According to the method for preparing the multilayer ceramic capacitor, in the sintering process, sintering additives in the first substrate volatilize, so that the local atmosphere with high volatilization concentration is formed around the stacked bodies, and the sintered ceramic body is uniform, compact and good in uniformity.
Owner:GUANGDONG FENGHUA ADVANCED TECH HLDG

Preparation method of titanium and titanium alloy surface black protective film for surgical implantation

The invention discloses a preparation method of a titanium and titanium alloy surface black protective film for surgical implantation, comprising the following steps: step 1: carrying out micro-arc oxidation coloring processing on titanium and titanium alloy surface to be processed, in the process, firstly, preparing a micro-arc oxidation electrolysing solution, and then carrying out the micro-arcoxidation coloring processing; and step 2: carrying out subsequent processing on the micro-arc oxidation film, wherein the subsequent processing comprises the following steps: firstly, preparing a mixed solution for hydro-thermal processing, completely dipping the titanium and titanium alloy after micro-arc oxidation shading processing in the mixed solution, carrying out the hydro-thermal processing on the surface by adopting a hydro-thermal method, drying the titanium and titanium alloy under the condition of low temperature when the hydro-thermal processing is completed, and generating a layer of pure black micro-arc oxidation film with uniform and plump surface on the titanium and titanium alloy surface. The invention has simple and convenient operation, economy, high production efficiency, and high bonding strength between a generated ceramic film, i.e. the micro-arc oxidation film and a substrate, and the invention can effectively overcome various defects and deficiencies which exist in the prior coating processing techniques.
Owner:NORTHWEST INSTITUTE FOR NON-FERROUS METAL RESEARCH

Photovoltaic cell module and manufacturing method thereof

The invention relates to a photovoltaic cell module and a manufacturing method thereof. An interconnection lead wire of the photovoltaic cell module is connected with a thin grid line and a function ceramic thin film through cured type conducting slurry. According to the manufacturing method of the photovoltaic cell module, the interconnection lead wire coated with the cured type conducting slurry is attached to the surface of a cell piece in a pressing mode, and then curing is carried out; or the cured type conducting slurry is printed on the surface of the cell piece, then the interconnection lead is attached to the cured type conducting slurry in a pressing mode, and connecting of the thin grid line, the function ceramic thin film and the interconnection lead wire is achieved by curing; or a main grid line formed by curing of the cured type conducting slurry is arranged on the surface of the cell piece of the photovoltaic cell module. The photovoltaic cell module and the manufacturing method thereof have the advantages that the interconnection lead wire does not need to be connected with the cell piece through the high-temperature-sintered traditional main grid line, so that the processing step can be well simplified, and the performance of the cell piece is improved; and scaling powder and a protecting thin film are of no need, and the long-time stability of a component is improved.
Owner:常州市异质结管理咨询合伙企业(有限合伙)

Continuous production and sintering device for self-supported ceramic thin film

The invention discloses a continuous production and sintering device for a self-supported ceramic thin film, and relates to a ceramic thin film. The continuous production and sintering device is provided with a high-temperature furnace system and a sample conveying system. The high-temperature furnace system is provided with a furnace body, a heating device and a vacuum device. The furnace body is provided with a hearth, a heat insulation layer and a vacuum layer. The hearth is divided by the heat insulation layer into a sample introduction chamber, a sintering chamber, a cooling chamber and a sample collection chamber. The heating device is provided with a thermocouple and a temperature controller. The vacuum device is provided with an inner furnace vacuum pump and a vacuum layer vacuum pump. The sample conveying system is provided with a sample introduction chamber sample winding device, a sample conveying device and a sample collection chamber sample winding device. The sample introduction chamber sample winding device is provided with a film winding drum, a fixing rod, a bearing, a motor shaft gear, a bearing gear and a film winding drum motor. The sample conveying device is provided with a sample carrier table, a fixing rod, a bearing, a motor shaft gear, a bearing gear, a big gear wheel, a conveying device motor, a chain and a conveying belt. The sampling chamber sample winding device is provided with a film winding drum, a fixing rod, a bearing, a motor shaft gear, a bearing gear and a film winding drum motor.
Owner:XIAMEN UNIV +1
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