43 results about "Metallate" patented technology

Corrosion resistant, hydrophilic coatings on the surface of aluminum and aluminum alloys may be formed using aqueous compositions containing fluorometallates such as H2TiF6 or H2ZrF6 and vanadium compounds such as decavanadates. To minimize the odor evolved from the conversion coatings it is preferred for a specified oxide, hydroxide, carbonate, or alkoxide to also be present in or added to the aqueous composition.

The invention relates to a process for the removal of metals (especially mercury) from a mercury-containing hydrocarbon fluid feed using specifically selected ionic liquids, comprising contacting the mercury-containing hydrocarbon fluid feed with an ionic liquid having the formula [Cat+][M+][X-] and separating from the ionic liquid a hydrocarbon fluid product having a reduced mercury content compared to the mercury-containing fluid feed. An alternative process involves the use of a metallate salt of the following formula [Q+][(Mx+)m(Ly-)m](nx-my) For the meanings of the above symbols, please see the specification.

The present invention provides a process for producing a layer of a crystalline material comprising a perovskite or a hexahalometallate, which process comprises: (i) exposing a substrate to a vapour comprising a first precursor compound in a first chamber to produce a layer of the first precursor compound on the substrate; and (ii) exposing the layer of the first precursor compound to a vapour comprising a second precursor compound in a second chamber to produce the layer of a crystalline material, wherein the pressure in the second chamber is above high vacuum. The invention also provides a process for producing a layer of a crystalline material comprising a perovskite or a hexahalometallate, which process comprises exposing a layer of a first precursor compound on a substrate to a vapour comprising a second precursor compound in a chamber to produce the layer of a crystalline material, wherein the pressure in the chamber is greater than high vacuum and less than atmospheric pressure. The invention also provides a process for producing a semiconductor device comprising a layer of a crystalline material, which process comprises producing said layer of a crystalline material by a process as according to the invention.

A method for preparing IGZO particles and a method for preparing an IGZO thin film by using the IGZO particles are disclosed. The method for preparing the IGZO particles comprises the following steps: (A) providing a solution of metal acid salts, which contains a zinc salt, an indium salt, and a gallium salt; (B) mixing the solution of the metal acid salts with a basic solution to obtain an oxide precursor; and (C) heating the oxide precursor to obtain IGZO particles.

A method is provided for synthesizing metal cyanometallate (MCM). The method provides a solution of AXM1Y(CN)Z; where “A” is selected from a first group of metals and M1 is selected from a second group of metals. The method adds a material including M2 to the solution to form a liquid phase material that may be either a suspension or a solution. M2 is selected from the second group of metals. The method adds acid to the liquid phase material. The addition of acid to the liquid phase material decomposes the M2 material into M2-ions. Simultaneous with the addition of the acid, a precipitate of ANM1PM2Q(CN)R.FH2O is formed, where N is in a range of 1 to 2. A variation of the above-described synthesis method is also provided.