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Zinc oxide-based low-voltage pressure-sensitive ceramic film material and preparation method

A thin-film material, zinc oxide-based technology, applied in the field of zinc oxide-based low-voltage varistor ceramic thin-film materials and preparation, can solve the problems of poor film formation quality and easy occurrence of cracks, so as to suppress instantaneous high voltage and absorb surge energy Effect

Inactive Publication Date: 2011-11-30
JIANGSU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the quality of its film formation is not very good, and it is prone to cracks

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment l

[0030] 1) Use the traditional sintering method to prepare zinc oxide-based ceramic targets: ingredients are prepared according to the following mole percentage components, ZnO96.2%, Bi 2 o 3 1.0%, Sb 2 o 3 1.0%, Co 2 o 3 0.8%, Cr 2 o 3 0.5%, MnO 20.5%; use agate balls, stainless steel tanks, and absolute ethanol as the ball milling medium. The mass ratio of agate balls: ingredient powder: absolute ethanol is 2.5:1:1, wet milling in a planetary high-energy ball mill for 7 hours, and the speed is 250rpm; The ball-milled slurry was kept at 70 °C for 24 hours to form a dry powder; after adding a 2% PVA aqueous solution to the dry powder, it was pressed with a pressure of 60 MPa to make the powder into a billet; the billet was placed in a silicon-molybdenum rod high-temperature electric furnace, First raise from room temperature to 600°C at a rate of 5°C / min, keep warm for 120min in an air atmosphere, then raise to a sintering temperature of 950°C at a rate of 5°C / min, keep ...

Embodiment 2

[0034] 1) Use the traditional sintering method to prepare zinc oxide-based ceramic targets: ingredients are prepared according to the following molar percentage components, ZnO96.4%, Bi 2 o 3 0.8%, Sb 2 o 3 1.0%, Co 2 o 3 0.8%, Cr 2 o 3 0.5%, MnO 2 0.5%; use agate balls, stainless steel tanks, and absolute ethanol as the ball milling medium. The mass ratio of agate balls: ingredient powder: absolute ethanol is 2.5:1:1, wet milling in a planetary high-energy ball mill for 6 hours, and the speed is 200rpm; The ball-milled slurry was kept at 70°C for 24 hours to form a dry powder; after adding a 2% PVA aqueous solution to the dry powder, it was pressed with a pressure of 70 MPa to make the powder into a billet; the billet was put into a silicon-molybdenum rod high-temperature electric furnace, First raise from room temperature to 500°C at a rate of 5°C / min, keep warm for 120min in an air atmosphere, then raise to a sintering temperature of 900°C at a rate of 5°C / min, keep ...

Embodiment 3

[0038] 1) Use the traditional sintering method to prepare zinc oxide-based ceramic targets: make ingredients according to the following mole percentage components, ZnO96.8%, Bi 2 o 3 0.7%, Sb 2 o 3 1.0%, Co 2 o 3 0.5%, Cr 2 o 3 0.5%, MnO 2 0.5%; use agate balls, stainless steel tanks, and absolute ethanol as the ball milling medium. The mass ratio of agate balls: ingredient powder: absolute ethanol is 2.5:1:1, wet milling in a planetary high-energy ball mill for 4 hours, and the speed is 300rpm; The ball-milled slurry was kept at 70 °C for 24 hours to form a dry powder; after adding a 2% PVA aqueous solution to the dry powder, it was pressed with a pressure of 65 MPa to make the powder into a billet; the billet was placed in a silicon-molybdenum rod high-temperature electric furnace, First raise from room temperature to 500°C at a rate of 5°C / min, keep it warm for 120 minutes in an air atmosphere, then raise it to a sintering temperature of 850°C at a rate of 5°C / min, k...

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Abstract

The invention relates to a zinc oxide pressure-sensitive ceramic, specifically a zinc oxide-based low-voltage pressure-sensitive ceramic film material and a preparation method. The thickness of the film is 1 μm-3 μm, and the ingredients are prepared according to the following molar percentages. ZnO95%-98% is the main material, and Bi2O3, Sb2O3, Co2O3, Cr2O3 and MnO2 are pressure-sensitive functional additives, each of which is 0.1%-1.0%; Drying after ball milling, granulation, pressing into a green body, and sintering into a sputtering target; then using magnetron sputtering to prepare a zinc oxide-based low-voltage varistor ceramic film material: the varistor voltage of the film material is 2.03-4.84V , the nonlinear coefficient is 15.42~19.67, and the leakage current density is 0.24~0.83μA / mm2. The zinc oxide-based low-voltage pressure-sensitive ceramic film material of the invention can be used in integrated circuits to suppress instantaneous high voltage and absorb surge electric energy.

Description

technical field [0001] The invention relates to a zinc oxide pressure-sensitive ceramic, specifically a zinc oxide-based low-voltage pressure-sensitive ceramic film material and a preparation method. Background technique [0002] Zinc oxide is an important functional material and a new type II-VI wide bandgap semiconductor material. It has a direct bandgap of 3.37eV at room temperature and an exciton binding energy of 60meV, good electromechanical coupling and low electronic Induced defects, as a functional material with wide band gap, low dielectric constant, high chemical stability and excellent piezoelectric and photoelectric properties, are widely used in many fields. The epitaxial growth temperature of ZnO thin film is low, which is beneficial to reduce The cost of equipment, the suppression of solid phase outdiffusion, the improvement of film quality, and easy implementation of doping, ZnO varistor is an electronic component widely used in various circuit overcurrent p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/453C04B35/622C04B41/50
Inventor 花银群陈瑞芳孙真真
Owner JIANGSU UNIV
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