Packaging device of light-emitting diode and packaging method thereof

A technology for light-emitting diodes and packaging devices, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of limited thermal conductivity, easy accumulation, and thin electrode layer thickness, and achieve reliable insulation performance, good thermal matching performance, and heat dissipation performance. Good results

Active Publication Date: 2010-12-22
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, the two electrodes of the patch-type LED light-emitting chip are respectively connected to two metal brackets. The main problems are: 1. The thermal conductivity of the epoxy resin layer is extremely poor, and the completely covered structure causes a large amount of heat to accumulate in the LED; 2. .According to the thermal resistance calculation formula, R=h / λ*S (S is the heat flow area, h is the distance through which the heat flow passes, and λ is the thermal conductivity), the heat flow surface of the metal bracket is too small and the length is too large, it is difficult to achieve good cooling effect
[0004] like figure 2 As shown, it is a packaging mode for LED, including a thermally conductive substrate 21 and a ceramic insulating layer (generally aluminum oxide or aluminum nitride) 25, a patch-type LED light-emitting chip 22, a metal electrode 23 and a lens 24, mainly through The heat dissipation of the insulating and heat-conducting substrate has the following main problems: the thermal conductivity of the alumina substrate is not high, and for LEDs with large heat generation, the heat is easy to accumulate in the ceramic insulating layer 25 under the LED; and the cost of using aluminum nitride is too high
[0005] and image 3 structure and figure 2 Similar, the difference is that the LED chip 02 is directly mounted on the electrode 03, and the metal material of the electrode 03 is helpful for heat conduction, and there are problems: the thickness of the electrode layer is thin, and the heat conduction capacity is limited

Method used

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  • Packaging device of light-emitting diode and packaging method thereof
  • Packaging device of light-emitting diode and packaging method thereof
  • Packaging device of light-emitting diode and packaging method thereof

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Embodiment 3

[0072] Preferably, the light-emitting diode packaging device of the third embodiment is manufactured by the following method during packaging, such as Figure 6 As shown, 122 in the figure is a glass-ceramic insulating layer, which is made by selective laser melting. 190 is a silver-plated heat conduction layer. The encapsulation method of implementing 3 comprises the following steps:

[0073] 1. Select a metal substrate 110, perform cleaning and degreasing treatment, and plate a 10-micron silver-plated heat-conducting layer on its front side.

[0074] 2. Drill out the required small holes on the silver-plated metal substrate 110 and perform cleaning treatment.

[0075] 3. Fabricate a mask on the front side of the metal substrate 110 to completely cover the front side.

[0076] 4. Put the masked metal substrate into an oxidation tank, and perform micro-arc oxidation or hard oxidation to form an aluminum oxide thin film insulation layer 121 with a thickness of more than 30 m...

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Abstract

The invention relates to the field of photoelectron packaging and discloses a packaging device of a light-emitting diode and a packaging method thereof. A packaging structure comprises LED light emitting chips arranged on the front face of a metallic substrate, holes which are formed on the metallic substrate and penetrate the front and back faces of the metallic substrate, and first insulating layers arranged on the back face of the metallic substrate and periphery of the holes. Because the LED light emitting chips are directly arranged on the metallic substrate, heat can be fast transferred and the heat dispersion performance is high. The holes are used as electrodes and independent electric conduction channels are formed between the holes; therefore, the insulating property is reliable; the packaging device can be used for both single-chip packaging and multi-chip packaging. Ceramic thin films formed by a micro-arc oxidation method or a rigid oxidation method are in-situ growth film layers, have high joint strength, thermal expansivity similar to that of the substrate and excellent heat matching property.

Description

technical field [0001] The invention relates to the field of optoelectronic packaging, in particular to a light emitting diode packaging device and packaging method. Background technique [0002] The current shell structure of the light-emitting diode is mainly to install the patch-type light-emitting diode chip on the insulating substrate, and then install the electrodes on the circuit on the insulating substrate. The performance is very poor and becomes the bottleneck of heat dissipation, especially for LEDs, the heat cannot be conducted quickly and accumulates in the LED chip, resulting in a decrease in performance and lifespan. [0003] Such as figure 1 The LED shown is the current mainstream packaging mode, including an epoxy resin layer 11 , a patch-type LED light-emitting chip 12 , and a metal bracket 13 . Among them, the two electrodes of the patch-type LED light-emitting chip are respectively connected to two metal brackets. The main problems are: 1. The thermal c...

Claims

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Application Information

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IPC IPC(8): H01L33/48H01L33/64H01L33/62
CPCH01L2224/48091H01L2224/48227
Inventor 柴广跃雷云飞刘文黄长统王少华刘沛徐光辉
Owner SHENZHEN UNIV
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