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Dielectric ceramic thin film containing Nb composite metal oxide and preparation method thereof

A composite metal and dielectric ceramic technology, applied in circuits, electrical components, piezoelectric/electrostrictive/magnetostrictive devices, etc., can solve the problems of unstable chemical properties, limit the development of microwave thin-film devices, etc. Controllable ingredients, high quality, and integrated effects

Inactive Publication Date: 2008-10-29
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, for a long time, the introduction of Nb in wet chemical preparation is based on NbCl 5 As a raw material, this compound has not been commercialized in China, and its chemical properties are unstable and difficult to be prepared in the laboratory
Therefore, the preparation of thin film precursors containing Nb elements has become a bottleneck for the thin film of Nb-containing dielectric materials, which also limits the development of microwave thin film devices to a certain extent.

Method used

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  • Dielectric ceramic thin film containing Nb composite metal oxide and preparation method thereof
  • Dielectric ceramic thin film containing Nb composite metal oxide and preparation method thereof
  • Dielectric ceramic thin film containing Nb composite metal oxide and preparation method thereof

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Embodiment 1-Ca

[0056] The present invention is further described below with two specific examples, and the present invention is not limited to this example. Example 1 - Ca[Ti 1 / 3 (Mg 1 / 3 Nb 2 / 3 ) 2 / 3 ]O 3 Preparation of Dielectric Ceramic Thin Films

[0057] Molar ratio to CaCO 3 :CA=1:1, MgCO 3 : CA=1:1, weigh CaCO 3 , MgCO 3 and citric acid (CA), first dissolve citric acid in deionized water to make citric acid solution, dissolve CaCO 3 Use a 0.25 mol / L citric acid solution to dissolve MgCO 3 Use a 2 mol / L citric acid solution, then add CaCO 3 , MgCO 3 , stirred until clear to obtain Ca-CA solution and Mg-CA) solution.

[0058] Weigh tetrabutyl titanate (Ti(OC 4 h 9 ) 4 ) and CA, first dissolve CA in deionized water to make a CA solution with a concentration of 0.1 mol / L, stir at 80°C until clear, then pour the hot solution of CA into Ti(OC 4 h 9 ) 4 , continue stirring at 80° C. for 2 to 3 hours to obtain a clear Ti-CA solution with a constant volume of 0.1 mol / L.

[00...

Embodiment 2

[0063] Example 2-Ca(Mg 1 / 3 Nb 2 / 3 )O 3 Preparation of Dielectric Ceramic Thin Films.

[0064] Clarified Ca-CA (0.2 mol / liter), Mg-CA solution (2 mol / liter) and Nb-CA solution (0.7 mol / liter) were configured in the same manner as in Example 1. Pour the prepared Ca-CA solution and Mg-CA solution into the Nb-CA solution, adjust the pH of the solution to 8 with ammonia water, and add ethylene glycol (EG) 6 times the total amount of citric acid in the solution as a cross-linking agent , and then slowly heated and stirred at 40°C to concentrate to 0.1 mol / liter containing CMN precursor, after standing and aging, you can get Ca(Mg 1 / 3 Nb 2 / 3 )O 3 (CMN) precursor solution. Coating and heat treatment by the same method in Example 1, obtain a single perovskite structure, Ca(Mg 1 / 3 Nb 2 / 3 )O 3 Dielectric ceramic film.

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Abstract

The invention discloses an Nb composite metal oxide-containing dielectric ceramic film and a preparation method thereof. The dielectric ceramic film has a general formula of Ca[Tix(Mg1 / 3Nb2 / 3)(1-x)]O3 (0 is less than or equal to x<1). The preparation method employs a liquid phase spin coating technology. The key precursor solution is obtained by reacting Nb2O5 and hot alkali, and hydrolyzing; reacting the obtained gel and citric acid to obtain an Nb-citric acid solution; polymerizing, and concentrating or esterifying with other metal-citric acid solution. The film is prepared by spin-coating the precursor solution on a clean substrate; drying at 120 DEG C and pretreating at 400-500 DEG C; repeatedly spin-coating and treating; and heat treating at 500-900 DEG C for 0.5-1 hour. With the method, any precursor solution for forming the film can be prepared according to the composition of the dielectric ceramic film; therefore, material cost of Nb element-containing dielectric ceramic film liquid phase forming solution is reduced, and simple and precise control of the film composition is realized.

Description

technical field [0001] The invention relates to a Nb-containing composite metal oxide dielectric ceramic film and a preparation method thereof. Background technique [0002] Microwave dielectric devices have the advantages of large output power and are suitable for microwave high-frequency bands, etc., and have become one of the main development directions of next-generation microwave devices and a hot research topic at home and abroad. In order to realize the miniaturization and integration of microwave devices and circuits, people have also begun to consider thin-film dielectric frequency devices. Experimental studies by Toshio Nishikawa et al. have proved that multilayer dielectric films have lower insertion loss and higher quality factors than corresponding bulk materials. Therefore, the thin film of dielectric materials can meet the miniaturization needs of monolithic microwave integrated circuits (MMICs), and has important practical significance and practical value fo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/495C04B35/465H01L41/187H10N30/853
Inventor 陈文周静朱杰沈杰雷琼朱泉峣孙华君徐庆
Owner WUHAN UNIV OF TECH
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