The invention discloses a negative resistance clamping silicon controlled rectifier rectification memristor and a manufacturing method thereof. A DN-Well region is arranged on a substrate P-Sub, and a first P-Well region, an N-Well region and a second P-Well region are arranged in the DN-Well region; a first shallow slot isolation region, a first P + injection region, a second shallow slot isolation region, a first N + injection region, a first polysilicon gate, a third shallow slot isolation region and a second P + injection region are arranged in the first P-Well region, and a fourth shallow slot isolation region stretches across the junction of the first P-Well region and the N-Well region; a second N + injection region, a fifth shallow slot isolation region and a third N + injection region are arranged in the N-Well region; a sixth shallow slot isolation region stretches across the junction of the N-Well region and the second P-Well region; a third P + injection region, a seventh shallow slot isolation region, a second polysilicon gate, a fourth N + injection region, an eighth shallow slot isolation region, a fourth P + injection region and a ninth shallow slot isolation region are arranged in the second P-Well region; in this way, continuous adjustment and control of the high resistance state and the low resistance state are achieved, and the requirement for large-scale on-chip integration of the silicon-based memristor based on the standard microelectronic technology is met.