Photoelectric driving avalanche diode memristor and manufacturing method thereof
An avalanche diode and memristive device technology, which is applied in the field of photoelectric drive avalanche diode memristive devices and their fabrication, can solve the problems of difficult mass production, difficult to be compatible with the application of standard microelectronic process integration, etc., and achieves simple process and convenient operation. Effect
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[0030] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0031] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terms used herein in the description of the present invention are for the purpose of describing specific embodiments only, and are not intended to limit the present invention. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.
[0032] Such as Figure 3-Figure 6 As shown, a photoelectrically driven avalanche diode memristive device includes a substrate P-Sub101, an NBL region 102, a first ring-shaped DN-Well region 103, a ring-shaped P-e...
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