The invention discloses a
lateral diffusion eGaN HEMT device integrating a reverse
diode and an embedded drain
electrode field plate. The device comprises a GaN buffer layer, an AlGaN
barrier layer, agate
electrode, an under-gate insulating layer, a source
electrode, a source electrode extension section, a source electrode field plate, an MIS
schottky diode extension section, an MIS
schottky diode insulating layer, a p-type GaN or groove, a drain electrode, a
passivation layer and an AlN staggered-layer drain electrode embedded field plate, wherein the MIS
schottky diode insulating layer is prepared in the middle region, towards the MIS schottky
diode extension section and the AlGAN
barrier layer surface, of the source electrode field plate; the side, close to the drain electrode, of thediode adopts the p-type GaN or groove, so that the breakdown characteristic of the device is improved; the embedded staggered-layer field plate is adopted below the drain electrode, so that anti-breakdown capability of the drain electrode to the substrate is improved; the design of the staggered layer is suitable for the gradual change distribution of the drain electrode
electric field from rightto left, so that the breakdown characteristic of the device is improved; and the source electrode field plate is extended, the gate electrode is wrapped, the MIS schottky
diode is formed on the gate drain side, and the diode is made into a block isolation mode, so that the drain electrode current is greatly improved.