Grating groove manufacturing method for silicon carbide device

Abstract

The invention relates to a semiconductor manufacturing technology, in particular to a grating groove manufacturing method for silicon carbide UMOS device. According to the grating groove manufacturing method for the silicon carbide device, mainly, a dielectric layer on a silicon carbide epitaxial wafer is etched according to a grating groove area window, part of the dielectric layer on the upper surface of silicon carbide is reserved during etching, and then the part of the dielectric layer is corroded through a corrosion technology, so that the area where the dielectric layer makes contact with the silicon carbide epitaxial wafer forms a smooth arc, and a silicon carbide grating groove structure with a steep side wall, without a micro groove and with smooth bottom feet is formed on the silicon carbide epitaxial wafer after etching. The method has the advantages that the silicon carbide grating groove structure with the steep side wall, without the micro groove and with the smooth bottom feet is obtained, the electric field concentration effect at the bottom of a groove grate is reduced, and breakdown property and reliability of the device are improved. The method is particularly applicable to silicon carbide grating groove structure manufacturing.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for manufacturing a gate groove of a silicon carbide UMOS device. Background technique [0002] Silicon carbide material has excellent physical and electrical properties. With its unique advantages such as large band gap, high critical breakdown electric field, high thermal conductivity and high saturation drift speed, it has become a high-voltage, high-power, high-temperature-resistant, high-frequency, anti- It is an ideal semiconductor material for irradiation devices and has broad application prospects in military and civil affairs. Power electronic devices made of silicon carbide materials have become one of the hot devices and frontier research fields in the field of semiconductors. [0003] Silicon carbide materials have high hardness and stable chemical properties, and it is difficult to form various structures through wet etching. At present, only dry etc...

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Problems solved by technology

The existence of micro-grooves will lead to the concentration of the electric field at the bottom of the gate groove of the device, reducing the stability and reliability of the device

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