425 results about "Post annealing" patented technology

A ferrite low-density high-strength steel and manufacturing method thereof. The ferrite low-density high-strength steel chemical comprises the following chemical components composition by mass percentage: 0.05-0.40% of C, 4.0-12.0% of Mn, 3.0-7.0% of Al, no more than 0.02% of P, no more than 0.01% of S, no more than 0.01% of N, and the balance of Fe and inevitable impurity elements. The above elements satisfy the following relationship: 1.0<Mn / Al, 3.5 <1.5Mn / Al+10C, and Mn / Al + 10C <5.2 The manufacturing method comprises hot rolling, annealing, pickling, cold rolling and annealing to prepare the low-density high-strength steel plate. In addition to ferrite, the microstructure of the steel plate also contains 6-40% of residual austenite. The low-density high-strength steel plate has tensile strength no less than 800MPa, elongation no less than 25%, and density less than 7500kg / m<3>.

Certain example embodiments relate to methods of making oxide thin film transistor arrays (e.g., IGZO, amorphous or polycrystalline ZnO, ZnSnO, InZnO, and / or the like), and devices incorporating the same. Blanket layers of an optional barrier layer, semiconductor, gate insulator, and / or gate metal are disposed on a substrate. These and / or other layers may be deposited on a soda lime or borosilicate substrate via low or room temperature sputtering. These layers may be later patterned and / or further processed in making a TFT array according to certain example embodiments. In certain example embodiments, all or substantially all TFT processing may take place at a low temperature, e.g., at or below 150 degrees C., until a post-annealing activation step, and the post-anneal step may take place at a relatively low temperature (e.g., 200-250 degrees C.).

A method for forming a high-luminescence Si electroluminescence (EL) phosphor is provided, with an EL device made from the Si phosphor. The method comprises: depositing a silicon-rich oxide (SRO) film, with Si nanocrystals, having a refractive index in the range of 1.5 to 2.1, and a porosity in the range of 5 to 20%; and, post-annealing the SRO film in an oxygen atmosphere. DC-sputtering or PECVD processes can be used to deposit the SRO film. In one aspect the method further comprises: HF buffered oxide etching (BOE) the SRO film; and, re-oxidizing the SRO film, to form a SiO2 layer around the Si nanocrystals in the SRO film. In one aspect, the SRO film is re-oxidized by annealing in an oxygen atmosphere. In this manner, a layer of SiO2 is formed around the Si nanocrystals having a thickness in the range of 1 to 5 nanometers (nm).

The invention discloses a mixed conductor composite material LiFePO4-MXy. The mixed conductor composite material LiFePO4-MXy is prepared by synthesizing LiFePO4 from the oxides or sulfides of transition metals by a solid state method, and performing high-energy ball-milling and annealing on the transition metals to obtain the mixed conductor composite material LiFePO4-MXy. In the mixed conductor composite material (MCM) LiFePO4-MXy, MXy is not only a conductor of lithium ions but also a conductor of electrons, LiFePO4 particles are uniformly dispersed in the MXy, and the surface of the mixed conductor composite material in a lithium ion battery comprises a carbon material which is added in size mixing and electrolyte which is impregnated in the carbon material. The LiFePO4-MXy has the advantages of high electron conductivity, high ion conductivity, high high-rate charge and discharge capacity, high cycle performance, relatively higher tap density, simple and practical production process, cleanness, no pollution, low cost and the like, and is suitable for large-scale production.

A method for forming a high-luminescence Si electroluminescence (EL) phosphor is provided, with an EL device made from the Si phosphor. The method comprises: depositing a silicon-rich oxide (SRO) film, with Si nanocrystals, having a refractive index in the range of 1.5 to 2.1, and a porosity in the range of 5 to 20%; and, post-annealing the SRO film in an oxygen atmosphere. DC-sputtering or PECVD processes can be used to deposit the SRO film. In one aspect the method further comprises: HF buffered oxide etching (BOE) the SRO film; and, re-oxidizing the SRO film, to form a SiO2 layer around the Si nanocrystals in the SRO film. In one aspect, the SRO film is re-oxidized by annealing in an oxygen atmosphere. In this manner, a layer of SiO2 is formed around the Si nanocrystals having a thickness in the range of 1 to 5 nanometers (nm).

One-transistor ferroelectric memory devices using an indium oxide film (In2O3), an In2O3 film structure, and corresponding fabrication methods have been provided. The method for controlling resistivity in an In2O3 film comprises: depositing an In film using a PVD process, typically with a power in the range of 200 to 300 watts; forming a film including In overlying a substrate material; simultaneously (with the formation of the In-including film) heating the substrate material, typically the substrate is heated to a temperature in the range of 20 to 200 degrees C.; following the formation of the In-including film, post-annealing, typically in an O2 atmosphere; and, in response to the post-annealing: forming an In2O3 film; and, controlling the resistivity in the In2O3 film. For example, the resistivity can be controlled in the range of 260 to 800 ohm-cm.

A method of manufacturing a MOS transistor is provided. A substrate having a gate structure thereon is provided. A first spacer is formed on the sidewall of the gate structure. A pre-amorphization implantation is carried out to amorphize a portion of the substrate. A doped source / drain extension region is formed in the substrate on each side of the first spacer. A second spacer is formed on the sidewall of the first spacer. A doped source / drain region is formed in the substrate on each side of the second spacer and then a pre-annealing operation is performed. Thereafter, a solid phase epitaxial process is carried out to re-crystallize the amorphized portion of the substrate and activate the doped source / drain extension region and the doped source / drain region to form a source / drain terminal. Finally, a post-annealing operation is performed.

A Pr1-XCaXMnO3 (PCMO) spin-coat deposition method for eliminating voids is provided, along with a void-free PCMO film structure. The method comprises: forming a substrate, including a noble metal, with a surface; forming a feature, such as a via or trench, normal with respect to the substrate surface; spin-coating the substrate with acetic acid; spin-coating the substrate with a first, low concentration of PCMO solution; spin-coating the substrate with a second concentration of PCMO solution, having a greater concentration of PCMO than the first concentration; baking and RTA annealing (repeated one to five times); post-annealing; and, forming a PCMO film with a void-free interface between the PCMO film and the underlying substrate surface. The first concentration of PCMO solution has a PCMO concentration in the range of 0.01 to 0.1 moles (M). The second concentration of PCMO solution has a PCMO concentration in the range of 0.2 to 0.5 M.

The invention relates to a manufacturing process of a stainless steel valve box forging. The stainless steel valve box forging is manufactured by adopting low-carbon (preferential ultralow-carbon) soft martensitic stainless steel, and comprises the following chemical components (wt%): C not more than 0.06, Si not more than 0.80, Mn not more than 1.0, P not more than 0.015, S not more than 0.010, 12-16 of Cr, 3.5-6.0 of Ni, Mo not more than 1.0, 0.01-0.02 of N, Cu not more than 0.010, and 0.01-0.015 of Al. The process comprises the steps of forging, annealing after forging, flaw detection afterrough machining, solid solution treatment, tempering, and sampling detection. In heating of the forging and the solid solution treatment, a gradient heating mode is adopted. After preheating, a higher heating speed is adopted to reach higher overheating degree to obtain finer austenite grains; through multi-directional forging and increment of a forging ratio, a forging material is more compact,and the mechanical performances are non-directional; and the solid solution treatment and the tempering treatment are combined to control a proper amount of reversed austenite to disperse among martensitic laths or substructures. The manufactured valve box forging is high in comprehensive and mechanical performances, wear resistance and corrosion fatigue limit resistance, and is excellent in coldand hot working performances.

The invention relates to the technical field of metal materials, and specifically relates to a cold-rolling method of a magnesium alloy deformation material with a non / weak-basal texture and a cold-rolled sheet obtained thereby. The cold-rolling method comprises the following steps: carrying out pre-treatment on a magnesium alloy deformation material blank with a non / weak-basal texture, and then carrying out cold-rolling processing, wherein the non / weak-basal texture plane of the blank is selected as the rolling plane during cold rolling, the rolling direction is parallel to the plane, and the blank is cold-rolled at room temperature into a sheet or foil with a thickness of 0.1-100 mm by single-pass or multiple-pass cold rolling; and annealing the sheet or foil after cold rolling at the annealing temperature of 200-400 DEG C for 10 minutes to 48 hours. Compared with the Mg-RE-Zn magnesium alloy deformation material blank with a non / weak-basal texture for cold rolling, the strength of the cold-rolled sheet is increased by 15% or above, and the strength of the cold-rolled and annealed sheet can be ensured to be increased by not less than 10%. Simultaneously, the rolling-direction elongation rate delta of the sheet is greater than or equal to 25%.