Wafer bonding method and preparation method for foreign substrate

Abstract

The invention provides a wafer bonding method and a preparation method for a foreign substrate. The wafer bonding method at least comprises the following steps: S1) supplying a first wafer and a second wafer, wherein the first wafer is equipped with a first bonding surface, and the second wafer is equipped with a second bonding surface; S2) preheating before bonding the first wafer and the second wafer; and S3) bonding the first bonding surface of the first wafer with the second bonding surface of the second wafer. According to the scheme, the preheating before the bonding for the wafers is capable of effectively reducing the thermal strain of the foreign bonding structure in a high-temperature post-annealing process, so that the use scope of the foreign bonding can be widened and the reliability of a foreign integrated material can be promoted. Meanwhile, the problems of de-bonding and broken bonding structure caused by thermal strain of the foreign bonding structure in the high-temperature post-annealing process can be solved.

Description

technical field [0001] The invention belongs to the field of material structure process preparation, and in particular relates to a wafer bonding method and a heterogeneous substrate preparation method. Background technique [0002] As the development of Moore's Law has encountered a bottleneck, a single material can no longer meet the rapid development of semiconductor technology. More than Moore's technology development route puts forward an urgent need for heterogeneous integration technology, which integrates materials with different properties to achieve high-density integration of multiple functional devices. For example, the integration of GaN and Si realizes the integration of GaN-based high electron mobility devices and silicon-based integrated circuits, and the integration of piezoelectric materials and Si realizes the integration of filter devices and integrated circuits. [0003] At present, the bonding process is widely used in the field of semiconductor materi...

AI Technical Summary

Problems solved by technology

However, due to the thermal expansion coefficient mismatch between heterogeneous materials, heterogeneous bonding structures will generate huge thermal strains under high-temperature processes such as high-temperature reinforcement, defect recovery, and material film transfer.

Thermal strain may lead to debonding of the bonded structure or even fragmentation of the heterogeneous bonded structure, making it impossible to achieve a wide range of heterogeneous integration

Images