179 results about "De bonding" patented technology

The invention provides cigarette aluminum-foil paper with an anti-counterfeiting label. The cigarette aluminum-foil paper comprises liner paper and an aluminum foil layer. An anti-counterfeiting laser film is arranged on the surface of the aluminum foil layer. The manufacturing process comprises the steps that the laser film is manufactured, an aluminum foil body coated with glue is heated and baked, the laser film and the aluminum foil are composited, a BOPP film is stripped from a cured semi-finished product, a BOPP base film on a cooled composited film is removed, a complexing agent for connecting the liner paper and the aluminum foil layer is prepared, and finally the liner paper and the aluminum foil layer are composited. The BOPP base film has the good temperature resistance and ageing resistance, materials are soft, no transparent de-bonding layer needs to coat the materials, and the technological process is simple; the anti-counterfeiting film is transferred onto aluminum foil, laser patterns will not disappear and are not likely to be damaged, and the while film is good in high temperature resistance and will not crack. The complexing agent between the liner paper and the aluminum foil layer is not likely to volatilize to generate hazardous substances, the temperature is high, and adhesive force can be provided for the liner paper and the aluminum foil layer for a long time.

Methods are provided for fabricating integrated circuit systems that include forming integrated circuits in and on a semiconductor substrate. Via holes are etched into a front surface of the semiconductor substrate and are filled with a conductive material. A carrier wafer having a layer of adhesive thereon is provided and an imprinted pattern is formed in the layer of adhesive. The front surface of the semiconductor substrate is bonded to the carrier wafer with the patterned layer of adhesive. A portion of a back surface of the semiconductor substrate is removed to expose a portion of the conductive material and the thinned back surface is attached to a second substrate. The semiconductor substrate is then de-bonded from the carrier wafer.

The invention discloses a method for bonding carbon fiber / phenolic-nitrile rubber materials, and belongs to the field of the manufacturing of a solid rocket engine insulator, and aims at solving the bonding problems of an engine housing, a first EPDM insulation material, a carbon fiber / phenolic-nitrile rubber materials and a second EPDM insulation material and improving the structural reliability. The method mainly comprises the steps of preparation, coating, prefabrication, cleaning, glue coating, setting, thermal pre-pressing, flaw detection, curing and the like. The structural integrity of the engine housing, a first EPDM insulation material, the carbon fiber / phenolic-nitrile rubber materials and the second EPDM insulation material are ensured by using a secondary bonding method, a secondary curing mode, a prefabrication forming method, a stepped temperature rising / dropping mode and other methods; the method has no de-bonding, air-entraining air hole and other quality problems, completely can meet the design requirements, and ensures the safety and reliability of a system.

The invention provides a reliable way to fabricate a new vertical structure compound semiconductor device with improved light output and a laser lift-off processes for mass production of GaN-based compound semiconductor devices. A theme of the invention is employing direct metal support substrate deposition prior to the LLO by an electro-plating method to form an n-side top vertical structure. In addition, an ITO DBR layer is employed right next to a p-contact layer to enhance the light output by higher reflectivity. A perforated metal wafer carrier is also used for wafer bonding for easy handling and de-bonding. A new fabrication process is more reliable compared to the conventional LLO-based vertical device fabrication. Light output of the new vertical device having n-side up structure is increased 2 or 3 times higher than that of the lateral device fabricated with same GaN / InGaN epitaxial films.

A method for fabricating one or more devices, e.g., integrated circuits. The method includes providing a substrate (e.g., silicon), which has a thickness of semiconductor material and a surface region. The substrate also has a cleave plane provided within the substrate to define the thickness of semiconductor material. The method includes joining the surface region of the substrate to a first handle substrate. In a preferred embodiment, the first handle substrate is termed a “thin” substrate, which provides suitable bonding characteristics, can withstand high temperature processing often desired during the manufacture of semiconductor devices, and has desirable de-bonding characteristics between it and a second handle substrate, which will be described in more detail below. In a preferred embodiment, the first handle substrate is also thick enough and rigid enough to allow for cleaving according to a specific embodiment.

The invention discloses a technique method for patterning the back surface of a silicon wafer. The technique method comprises: depositing a protective layer 1; forming a forming a deep trench and defining an aligning mark by using the deep trench; filling the deep trench; depositing a protective layer 2 in order to isolate a filler from a front-surface pattern to be formed subsequently; completing all front-surface patterning techniques; depositing a protective layer 3; reversing the silicon wafer and bonding the front surface of the silicon wafer with a carrier; grinding the back surface of the silicon wafer, wherein the aligning mark is exposed out of the back surface of the silicon wafer after the back surface of the silicon wafer is grinded; aligning by using the aligning mark and performing back surface patterning technique on the back surface of the silicon wafer; and performing a de-bonding technique for separating the silicon wafer from the carrier. According to the method provided by the invention, the aligning mark penetrates through the silicon wafer from the front surface to the back surface; when the back surface patterning technique is performed, an extra photoetching device and technique are not required to be added for achieving the aligning of the back-surface pattern and the front-surface pattern; and the production cost can be greatly decreased. In addition, the method is also compatible with a thin slice technique.

The invention relates to a wafer temporary bonding method, which comprises the following steps of: a, providing and washing a first wafer; b, providing a carrier wafer, and spin-coating a bond; c, transferring the first wafer and the carrier wafer into a bonding box to form a first bonding body, and thinning the first wafer on the first bonding body according to demands; d, scribing the thinned first wafer on the first bonding body by utilizing a laser scribing machine; e, transferring the first bonding body into the bonding box, and enabling the temperature inside the bonding box to be higher than a softening temperature of the bond; and uniformly applying pressure on the surface of the first wafer by utilizing a flat wafer in the bonding box; f, providing a needed second wafer, and bonding the second wafer with the first wafer according to demands to form a second bonding body; and g, de-bonding the second bonding body. The technique steps are convenient to operate, the production cost is reduced, the tilt curvature influence after the thinning of the wafer can be avoided, permanent bonding can be formed, and safety and reliability can be realized.

An active device substrate includes a flexible substrate, an inorganic de-bonding layer, and at least one active device. The flexible substrate has a first surface and a second surface opposite to the first surface, wherein the first surface is a flat surface. The inorganic de-bonding layer covers the first surface of the flexible substrate, and the material of the inorganic de-bonding layer is metal, metal oxide or combination thereof. The active device is disposed on or above the second surface of the flexible substrate.

The disclosure provides a method for de-bonding a flexible device. The method for de-bonding a flexible device includes providing a first carrier to mount a carrier substrate thereon, a release layer thereon and a flexible device covering the release layer and a portion of the carrier substrate. A vacuum suction process is performed to suction the flexible device using a vacuum device. A separation process is performed with air entering into an interface between the flexible device and the release layer to separate a portion of the flexible device from the release layer and the carrier substrate using a separation device. A first release process is performed so that the portion of the flexible device is separated from the vacuum device.

The present invention discloses a method of enabling the easy separation of labels, including wrap around labels and sleeve labels, particularly shrink sleeve labels, from containers during recycling through the use of a specially formulated coating to be applied in the seam area. The coatings ensure proper bonding, and shrink properties, of the labels, and have been designed to help de-bonding of the seam in a hot caustic wash step, or a solvent wash step. The method does not rely on floatation separation and therefore may be applied to any container / label material combination regardless of their specific gravity differences.

The invention discloses a heat-conducting copper foil which comprises de-bonding layers, an adhesive, a copper foil and an insulation layer, wherein the insulation layer is attached to one side of the copper foil; the other side of the copper foil is coated with the adhesive; the adhesive is arranged on the other side of the insulation layer; the de-bonding layers are arranged on two sides of the adhesive. According to the mode, the heat-conducting copper foil has the advantages of high reliability, good heat conductivity, convenience in adhesion, good insulativity, small thickness, easiness in bending, low price and the like, and is suitable for heat dissipation of chips of small electronic products.

An aircraft leading edge panel having an outer aerodynamic surface; and an inner surface carrying the elastomeric impact protection membrane. The membrane comprises a woven or knitted fabric which is impregnated with an elastomeric material. The membrane and the panel may be bonded by an adhesive or co-cured to bond the membrane to the panel. The membrane provides impact protection to the panel by de-bonding from the face of the panel and absorbing at least part of the energy of an object impacting the panel.