47 results about "Zinc diffusion" patented technology

A PIN photodiode having a substrate, a first type electrode layer disposed on the substrate, a first layer of intrinsic material disposed over a portion of the first-type electrode layer, a first type window layer disposed over said intrinsic layer. An island shaped region of intrinsic material is disposed over the window layer and a dielectric layer disposed over the island region and at least the peripheral portion of said island shaped region whereby an opening is formed in the island shaped region. A dopant is diffused through the opening so as to form a PN junction that extends into the first layer of intrinsic material.

A InGaAs / InP PIN photoelectric detector relating to a semiconductor component has the structure of double hetergeneous material in four layer of i-In0.53 Ga 0.47As photosensitive layer / i-InP buffer layer / N+-Inp substrate. There is P+ zinc diffusion layer which is close to i-In 0.53 Ga0.47 As photosensitive layer but not reach the photosensitive layer at the top layer. It is prepared by the following steps, growing a passivation film of aluminium oxide on the epitaxial sheet and carrying out open-type zinc diffusion by using zinc as a diffusion source, depositing high quality film of aluminium oxide on InP material by directly using evapouration to reduce dark current, and raising the signal to noise ratio. The film obtained can be used in passivation film of InP material.

The present invention discloses an epitaxial structure of an avalanche diode, and relates to the technical field of semiconductor manufacturing. The epitaxial structure of the avalanche diode comprises a substrate. A light-absorbing layer is formed above the substrate. An avalanche gain layer is formed above the light-absorbing layer. A zinc diffusion layer is formed above the avalanche gain layer. The zinc diffusion layer is made of the InP material. The avalanche gain layer is made of component-gradient materials composed of the In0.52Al0.48As material, the InxGa(1-x)AsyP(1-y) material, the InxGayAl(1-x-y)As mateiral and the InxGa(1-x)AsyP(1-y) material, or component-gradient materials composed of InxGayAl(1-x-y)As. In the InxGa(1-x)AsyP(1-y) material or the component-gradient material of InxGa(1-x)AsyP(1-y), x is larger than 0 and smaller than 1, and y is larger than 0 and smaller than 1. In the InxGayAl(1-x-y)As material or the component-gradient material of InxGayAl(1-x-y)As, x is larger than 0 and smaller than 1, y is larger than 0 and smaller than 1 and the sum of x+y is larger than 0 and smaller than 1. According to the technical scheme of the invention, the depth of the zinc diffusion area is effectively controlled, and the thickness of the avalanche gain layer is accurately controlled. The yield of avalanche diode devices is improved. The invention also discloses an avalanche diode manufacturing method.

The invention relates to a method for manufacturing an aluminum heat exchanger, in which a zinc thermal sprayed layer is formed on the surface of an aluminum flat tube (2) and then the zinc thermal sprayed tube is combined with aluminum corrugated fins and brazed soldered to the fin. The zinc thermal sprayed pipe (2) is subjected to zinc diffusion treatment by heating before brazing to diffuse zinc into the pipe surface, and brazing is performed thereafter. The heat exchanger manufactured in this way can reliably have a stable sacrificial corrosion layer, and the corrosion resistance is very good. The heat exchanger can be manufactured cost-effectively without major facility changes.

The invention relates to a method for detecting the Zn diffusion degree of the window area of a semiconductor laser with Zn diffusion, specifically comprising the following steps: (A) measuring a voltage V corresponding to a current value in an IV curve of a semiconductor laser with Zn diffusion; (B) measuring an on voltage Von corresponding to a current value in an I1V1 curve of a semiconductor laser with neither Zn diffusion nor other current bypasses; and (C) judging the Zn diffusion degree based on the voltage V and the on voltage Von: if Von-0.05<=V<=Von, judging that Zn has not entered an active region or has just entered the active region, the mixing degree of the quantum well is insufficient, and the zinc diffusion degree is not enough; if Von-0.15<=V<Von-0.05, judging that the zinc diffusion degree is just right; and if V<Von-0.15, judging that Zn enters a lower limiting layer, the zinc diffusion degree is severe, and the device performance is affected. According to the invention, the zinc diffusion degree is detected effectively, full mixing of the quantum well is ensured, and the long-term reliability of the semiconductor laser is improved; and the phenomenon that excessive zinc impurities enter the lower limiting layer is avoided, and the influence on the current distribution of a gain region is avoided.