47 results about "Zinc diffusion" patented technology

A PIN photodiode having a substrate, a first type electrode layer disposed on the substrate, a first layer of intrinsic material disposed over a portion of the first-type electrode layer, a first type window layer disposed over said intrinsic layer. An island shaped region of intrinsic material is disposed over the window layer and a dielectric layer disposed over the island region and at least the peripheral portion of said island shaped region whereby an opening is formed in the island shaped region. A dopant is diffused through the opening so as to form a PN junction that extends into the first layer of intrinsic material.

The invention discloses a zinc diffusion device and a diffusion method thereof in manufacturing of a photoelectric detector. The device comprises a heating furnace, a quartz tube, a gas control system, a vacuum system, a quartz boat and a vacuum pushing device, wherein both ends of the quartz tube are sealed, the quartz boat is used for accommodating a diffusion source and an epitaxial wafer to be diffused, the vacuum pushing device is used for pushing the quartz boat into the quartz tube, one end of the quartz tube is positioned in a hearth of the heating furnace and is used as a constant-temperature area, the other end of the quartz tube is positioned on the outside of the hearth of the heating furnace, is used as a cooling area and is maintained in a room temperature state, the gas control system is used for filling nitrogen into the quartz tube, and the vacuum system is used for vacuumizing the quartz tube by a vacuum pipeline. The method has the advantages that the risk of using an oxy-hydrogen flame to seal the quartz tube in the traditional tube-closing diffusion process is avoided, the pollution at the epitaxial wafer by sucking residual slag into the quartz tube at the negative pressure in the quartz tube when the quartz tube is opened is avoided, and the problems of nonuniform temperature, difficult control of diffusion depth and overlong cooling time in the traditional tube-opening diffusion process are solved. The method is favorable for batch diffusion.

A thin zinc diffusion coating, the diffusion coating including: (a) an iron-based substrate, and (b) a zinc-iron intermetallic layer coating the iron-based substrate, the intermetallic layer having a first average thickness of less than 15 μm, as measured by a magnetic thickness gage, the intermetallic layer having a second average thickness as measured by an X-Ray fluorescence thickness measurement, and wherein a difference between the first average thickness and the second average is less than 4 μm.

Provided is a member for slide fasteners or buttons, which is formed from a plated aluminum or aluminum alloy, and which has both cracking resistance and gloss at the same time. A member for slide fasteners or buttons, which comprises: a base material (101) that is formed from aluminum or an aluminum alloy; a zinc diffusion layer (102) that is obtained by diffusing zinc inside the surface of the base material; and a plurality of plating layers that cover the zinc diffusion layer (102). The plurality of plating layers comprise a copper pyrophosphate plating layer (103) and a copper sulfate plating layer (104) sequentially from the inner side.

The invention discloses a gallium, arsenic and phosphorus / gallium phosphide yellow light narrow-band detector and a manufacturing method of the gallium, arsenic and phosphorus / gallium phosphide yellow light narrow-band detector, and relates to a detector. The invention provides the gallium, arsenic and phosphorus / gallium phosphide yellow light narrow-band detector for detection of an infrared up-conversion material and the manufacturing method thereof. The detector is provided with an epitaxial wafer which is sequentially provided with an n-type high doping gallium phosphide monocrystal substrate, a non-doping gallium phosphide buffer layer, a non-doping GaAs0.15P0.85 light absorbing layer and a non-doping gallium phosphide cap layer from bottom to top. An n-type ohmic contact electrode is arranged at the bottom of the n-type high doping gallium phosphide monocrystal substrate. A silicon nitride mask, a p-type high-doping diffusing layer formed through zinc diffusion, a p-type ohmic contact electrode and a silicon nitride antireflection film grow sequentially on the non-doping gallium phosphide cap layer of the epitaxial wafer. The gallium, arsenic and phosphorus / gallium phosphide yellow light narrow-band detector has the advantages of easiness in preparation, low cost, nearly no response to infrared light and the like, and can be used to detect the infrared up-conversion material such as bill and the like, so that the bill detecting capacity of a bill detector is improved.

A InGaAs / InP PIN photoelectric detector relating to a semiconductor component has the structure of double hetergeneous material in four layer of i-In0.53 Ga 0.47As photosensitive layer / i-InP buffer layer / N+-Inp substrate. There is P+ zinc diffusion layer which is close to i-In 0.53 Ga0.47 As photosensitive layer but not reach the photosensitive layer at the top layer. It is prepared by the following steps, growing a passivation film of aluminium oxide on the epitaxial sheet and carrying out open-type zinc diffusion by using zinc as a diffusion source, depositing high quality film of aluminium oxide on InP material by directly using evapouration to reduce dark current, and raising the signal to noise ratio. The film obtained can be used in passivation film of InP material.

The invention discloses a solid-state zinc-expanding method of a GaAs-based epitaxial wafer. A ZnO thin film is arranged on the GaAs epitaxial wafer to serve as a zinc source for performing zinc diffusion. The ZnO thin film is arranged on the GaAs epitaxial wafer in a sputtering mode. The temperature of zinc diffusion is 450-550 DEG C, the atmosphere of zinc diffusion is inert gas, preferably, theinert gas is nitrogen. The zinc diffusion source is the ZnO thin film, and is a solid-state source, so that the repeatability and the consistency of the diffusion process are relatively high. When the ZnO thin film is prepared by adopting the sputtering method, a damage layer can be formed on the surface of the epitaxial layer; and zinc atoms can easily enter the epitaxial layer along the damagedefects when zinc diffusion is carried out. An MOCVD reaction chamber is used for zinc diffusion, and the heat transfer mode adopts heat conduction, so that the temperature change of the epitaxial wafer is very fast, and the temperature uniformity of the whole epitaxial wafer is very high, thereby achieving very high diffusion uniformity and consistency.

The present invention discloses an epitaxial structure of an avalanche diode, and relates to the technical field of semiconductor manufacturing. The epitaxial structure of the avalanche diode comprises a substrate. A light-absorbing layer is formed above the substrate. An avalanche gain layer is formed above the light-absorbing layer. A zinc diffusion layer is formed above the avalanche gain layer. The zinc diffusion layer is made of the InP material. The avalanche gain layer is made of component-gradient materials composed of the In0.52Al0.48As material, the InxGa(1-x)AsyP(1-y) material, the InxGayAl(1-x-y)As mateiral and the InxGa(1-x)AsyP(1-y) material, or component-gradient materials composed of InxGayAl(1-x-y)As. In the InxGa(1-x)AsyP(1-y) material or the component-gradient material of InxGa(1-x)AsyP(1-y), x is larger than 0 and smaller than 1, and y is larger than 0 and smaller than 1. In the InxGayAl(1-x-y)As material or the component-gradient material of InxGayAl(1-x-y)As, x is larger than 0 and smaller than 1, y is larger than 0 and smaller than 1 and the sum of x+y is larger than 0 and smaller than 1. According to the technical scheme of the invention, the depth of the zinc diffusion area is effectively controlled, and the thickness of the avalanche gain layer is accurately controlled. The yield of avalanche diode devices is improved. The invention also discloses an avalanche diode manufacturing method.

The invention provides a vertical resonant cavity surface emitting laser and a manufacturing method thereof. The vertical resonant cavity surface emitting laser comprises a substrate and an epitaxial lamination. The epitaxial lamination is formed on the substrate and includes an annular zinc diffusion zone, an annular ion implantation zone under the zinc diffusion zone, an annular oxidation zone under the ion implantation zone, and an active zone under the annular oxidation zone, wherein the zinc diffusion zone has a zinc diffusion through hole, the ion implantation zone has an ion implantation through hole, the oxidation zone has an oxidation through hole, and the zinc diffusion through hole, the ion implantation through hole and the oxidation through hole are in mutual communication. In addition, the present invention also provides the manufacturing method of the vertical resonant cavity surface emitting laser.

The invention discloses a tin and copper carbon nanotube composite coating of an automobile terminal, electroplating liquid and an electroplating method for the tin and copper carbon nanotube composite coating of the automobile terminal. The thickness of the coating is 0.5 micrometers, and the coating is prepared from, by mass, 1-3% of copper, 0.2-0.8% of carbon nanotube and the balance tin. The electroplating liquid is prepared from 30 g / L of tin sulfate, 3 g / L of copper sulfate, 50 g / L of citric acid, 35 g / L of tartaric acid, 100 mL / L of 98% sulfuric acid, 0.4 mg / L of 2-mercapto benzimidazole, 0.1g / L of sodium dodecyl sulfate and 1g / L of carbon nanotube. The treated automobile terminal is electroplated for 8-12 minutes in the electroplating liquid at 25 DEG C with the cathode-current density of 3 A / dm<2> and the rolling speed of 8 turns per minute. The problems that the plugging force of the automobile terminal obtained after tin plating is increased too much and assembling is difficult are solved, and the electroplating processes and the thickness of the coating are reduced; and while the cost is reduced, the plugging force is reduced, the protection performance of the terminal is improved, and the capability of resisting zinc diffusion which causes color changing of the coating is improved.

This invention discloses an open tube zinc diffusion method for the production of In-Ga-As photo-electric detectors relating to the diffusion technique of semiconductor photoelectric apparatus. The method includes applying a structure of open tubew diffusion quartz tube structure to intake the protecting gases of hydrogen and nitrogen, and putting zinc and semiconductor wafers into a carbon diffusion boat to carry out high temperature diffusion under normal pressure, and finishing the zinc diffusion technique of the semiconductor wafer. This invention has uniform and repeated diffusion, result, good property of junction with simple production technique and dimenision of semiconductor wafer can be increased along with the enlarging of the diffusion furnace, and the diffusion boat and the source can be used repeatedly.

The invention relates to a method for manufacturing an aluminum heat exchanger, in which a zinc thermal sprayed layer is formed on the surface of an aluminum flat tube (2) and then the zinc thermal sprayed tube is combined with aluminum corrugated fins and brazed soldered to the fin. The zinc thermal sprayed pipe (2) is subjected to zinc diffusion treatment by heating before brazing to diffuse zinc into the pipe surface, and brazing is performed thereafter. The heat exchanger manufactured in this way can reliably have a stable sacrificial corrosion layer, and the corrosion resistance is very good. The heat exchanger can be manufactured cost-effectively without major facility changes.

The invention relates to a method for detecting the Zn diffusion degree of the window area of a semiconductor laser with Zn diffusion, specifically comprising the following steps: (A) measuring a voltage V corresponding to a current value in an IV curve of a semiconductor laser with Zn diffusion; (B) measuring an on voltage Von corresponding to a current value in an I1V1 curve of a semiconductor laser with neither Zn diffusion nor other current bypasses; and (C) judging the Zn diffusion degree based on the voltage V and the on voltage Von: if Von-0.05<=V<=Von, judging that Zn has not entered an active region or has just entered the active region, the mixing degree of the quantum well is insufficient, and the zinc diffusion degree is not enough; if Von-0.15<=V<Von-0.05, judging that the zinc diffusion degree is just right; and if V<Von-0.15, judging that Zn enters a lower limiting layer, the zinc diffusion degree is severe, and the device performance is affected. According to the invention, the zinc diffusion degree is detected effectively, full mixing of the quantum well is ensured, and the long-term reliability of the semiconductor laser is improved; and the phenomenon that excessive zinc impurities enter the lower limiting layer is avoided, and the influence on the current distribution of a gain region is avoided.