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Selective emitter gallium antimonide infrared battery and manufacturing method thereof

A gallium antimonide and emitter technology, which is applied in the field of selective emitter gallium antimonide infrared batteries and its preparation, can solve the problems of rising battery manufacturing costs, achieve stable electrical performance and reduce manufacturing costs

Inactive Publication Date: 2013-12-25
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Gallium antimonide cells prepared by this method have high efficiency, but even if shallow diffusion is used on the light-receiving part of the cell surface, since the diffusion method is still the open type of zinc-antimony alloy, there will still be a high-concentration diffusion layer on the wafer surface, which cannot fundamentally solve the problem
Moreover, when using this process to prepare gallium antimonide cells, a diffusion and photolithography process will be added, which will increase the cost of cell preparation

Method used

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  • Selective emitter gallium antimonide infrared battery and manufacturing method thereof
  • Selective emitter gallium antimonide infrared battery and manufacturing method thereof
  • Selective emitter gallium antimonide infrared battery and manufacturing method thereof

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Embodiment 1

[0025] figure 1 A schematic diagram of the diffusion system required by the sealed diffusion method using zinc-gallium alloy in the present invention is given. The following describes the zinc diffusion preparation method of the selective emitter gallium antimonide infrared battery in this embodiment in conjunction with the accompanying drawings, which specifically includes the following steps:

[0026] In the first step, the concentration of Te containing tellurium is 2~7×10 17 cm -3 , The N-type gallium antimonide wafer with crystal orientation is successively placed in xylene, acetone and ethanol for cleaning, and then the surface oxide of the wafer is removed with dilute hydrochloric acid with a concentration of 5-20%, and finally cleaned in deionized water Blow dry with nitrogen gas;

[0027] In the second step, a silicon dioxide layer with a thickness of 0.11 μm is deposited on the wafer by plasma chemical vapor deposition, and then the diffusion area in the center o...

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Abstract

The invention discloses a selective emitter gallium antimonide infrared battery and a manufacturing method thereof. The method comprises the steps of p-n junction preparing in a zinc diffusion mode, electrode preparing, surface passivating, antireflection layer preparing and the like. The method is characterized in that zinc-gallium alloy is utilized as a diffusion source to conduct seal type zinc diffusion so that a zinc concentration curve only having a single diffusion front edge can be formed in an N-type gallium antimonide chip. According to the method, a high-concentration diffusion layer on the surface of the gallium antimonide chip after diffusion can be effectively restrained, and the problem that accurate corrosion is difficult to control in a traditional diffusion process is solved. According to the method, no protective gas needs to be added in a p-n junction preparing process, and cost of the gallium antimonide infrared battery is lowered. According to the selective emitter gallium antimonide infrared battery made in the method, the zinc concentration curve only having the single diffusion front edge in the selective emitter gallium antimonide infrared battery is directly formed through diffusion, and a corrosion process is not needed. Therefore, electrical output properties of the selective emitter gallium antimonide infrared battery are stable, and the selective emitter gallium antimonide infrared battery can be used as an electricity converting element in an infrared photovoltaic conversion system.

Description

technical field [0001] The invention belongs to the technical field of infrared batteries, and in particular relates to a selective emitter gallium antimonide infrared battery and a preparation method thereof. Background technique [0002] Gallium antimonide has a band gap of 0.72eV, and infrared cells prepared by using gallium antimonide wafers can directly convert the near-infrared radiation energy generated by fuel combustion into electrical energy. When the combustion temperature is about 1200°C, the output power per unit area of ​​the battery can reach 1.5-2W / cm 2 . The infrared photoelectric conversion system using gallium antimonide battery as the power output element can be used as military individual power supply, military communication power supply, geological survey, forest range station, and field investigation power supply. It has the advantages of lightness and silence. [0003] According to the introduction of US Patent US005091018A, the preparation process ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0693H01L31/18H01L25/04H01L31/0216H01L31/042H01L31/052
CPCY02E10/544Y02P70/50
Inventor 汤亮亮叶宏
Owner UNIV OF SCI & TECH OF CHINA
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