A method for detecting the degree of zn diffusion in the window region of a diffused zn semiconductor laser and its realization device

Abstract

The invention relates to a method for detecting the Zn diffusion degree of the window area of a semiconductor laser with Zn diffusion, specifically comprising the following steps: (A) measuring a voltage V corresponding to a current value in an IV curve of a semiconductor laser with Zn diffusion; (B) measuring an on voltage Von corresponding to a current value in an I1V1 curve of a semiconductor laser with neither Zn diffusion nor other current bypasses; and (C) judging the Zn diffusion degree based on the voltage V and the on voltage Von: if Von-0.05<=V<=Von, judging that Zn has not entered an active region or has just entered the active region, the mixing degree of the quantum well is insufficient, and the zinc diffusion degree is not enough; if Von-0.15<=V<Von-0.05, judging that the zinc diffusion degree is just right; and if V<Von-0.15, judging that Zn enters a lower limiting layer, the zinc diffusion degree is severe, and the device performance is affected. According to the invention, the zinc diffusion degree is detected effectively, full mixing of the quantum well is ensured, and the long-term reliability of the semiconductor laser is improved; and the phenomenon that excessive zinc impurities enter the lower limiting layer is avoided, and the influence on the current distribution of a gain region is avoided.

Description

technical field [0001] The invention relates to a method for detecting the diffusion degree of Zn in a window region of a diffused Zn semiconductor laser and a device for realizing it, and belongs to the technical field of semiconductor laser detection. Background technique [0002] Due to the advantages of small size, low energy consumption, and easy assembly and integration, high-power semiconductor lasers have attracted widespread attention, and have been applied to optical storage, optical communications, infrared lighting, laser processing, and pumping solid-state lasers. Increasing the output power of semiconductor lasers and improving the long-term reliability of semiconductor lasers have always been the focus of research on high-power semiconductor lasers. In recent years, the continuous output power of single-tube semiconductor lasers can work stably above the watt level, and the peak power of semiconductor laser arrays driven by pulse currents has also reached seve...

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Problems solved by technology

[0007] The above two patents have the following defects: Zn atom is an acceptor impurity for III-V semiconductor materials. When Zn is diffused in the window region of semiconductor lasers, if the diffusion temperature and time are not well grasped, Zn Severe lateral diffusion will reduce the area of ​​the gain region and generate light absorption, which will affect the performance of semiconductor lasers

However, the window area of ​​semiconductor lasers is generally narrow, about 20-30 μm, and the measurement of micro-area PL spectrum requires high precision of light source and instrument

Moreover, the ohmic contact layer GaAs absorbs PL, and the surface GaAs layer needs to be removed during the test, which sometimes affects the contact voltage of the semiconductor laser.

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