Open tube zinc diffusing method for producing indium-gallium-arsenic photoelectric detector
A photodetector and diffusion method technology, applied in semiconductor/solid-state device manufacturing, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as expensive equipment and materials, achieve low manufacturing costs, save manufacturing process materials, Easy-to-use effects
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[0018] The best embodiment of the present invention is as figure 1 shown, including the following steps:
[0019] ① First, the diffusion furnace 1 is heated to 400 to 600°C, and the embodiment uses a commercially available general-purpose semiconductor diffusion furnace to raise the temperature to 500°C;
[0020] ②Introduce N into the diffusion quartz tube 2 in the diffusion furnace 1 2 and H 2 Mix the protective gas, and the diffusion quartz tube of the embodiment is made into an open-tube diffusion quartz tube structure, and one end of the open-tube diffusion quartz tube is designed as a thin tube structure, which is easy to pass into N 2 and H 2 gas, N 2 and H 2 The gas is a diffusion protection gas; the other end is designed as an open tube structure, which is convenient for pushing and pushing out the diffusion boat 3;
[0021] 3. Diffusion source 4 and InP / InGaAs epitaxial semiconductor wafer 5 are packed into a covered diffusion boat, and the diffusion boat 3 is c...
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