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Process of realizing p plus and n plus diffusion on both sides of silicon chip by utilizing mask

A silicon wafer surface and mask technology, applied in the field of solar cells, can solve the problems of cross-contamination of donor elements and acceptor elements, and achieve the effect of a practical diffusion process

Active Publication Date: 2012-03-14
JA SOLAR TECH YANGZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are many ways to realize the diffusion structure, but it is often difficult to avoid the cross-contamination problem between the donor element and the acceptor element during the diffusion process.

Method used

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  • Process of realizing p plus and n plus diffusion on both sides of silicon chip by utilizing mask
  • Process of realizing p plus and n plus diffusion on both sides of silicon chip by utilizing mask
  • Process of realizing p plus and n plus diffusion on both sides of silicon chip by utilizing mask

Examples

Experimental program
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Effect test

Embodiment 1

[0026] as attached figure 2 As shown, the implementation of p on both sides of the silicon wafer using a mask provided by this embodiment + and n + The diffusion process consists of the following steps:

[0027] (a) Select a p-type silicon wafer 1 with a resistivity of 0.1-10Ω·cm, and then clean the surface of the silicon wafer;

[0028] (b) prepare a layer of mask 2 on one side of the silicon wafer;

[0029] The mask is prepared by PECVD method, and the mask is SiOx thin film, which can also be prepared by sputtering, electron beam evaporation and other methods, and the mask can also be SiNx, SiCx, SiOxNy or SiCxNy thin film.

[0030] (c) Soak in HF solution, the volume percent content of HF solution is 5%, remove the mask around plating on the other side;

[0031] (d) Diffusion of the donor element phosphorus to form n on the unmasked side + Diffusion layer 5;

[0032] (e) soaking in 5% HF solution by volume to remove the doped glass 4 formed on the surface of the sil...

Embodiment 2

[0038] as attached image 3 As shown, the implementation of p on both sides of the silicon wafer using a mask provided by this embodiment + and n + The diffusion process consists of the following steps:

[0039] (a) select an n-type silicon wafer 1 with a resistivity of 0.1-10Ω·cm, and then clean the surface of the silicon wafer;

[0040] (b) prepare a layer of mask 2 on one side of the silicon wafer;

[0041] The mask can be prepared by spin-coating, spin-coating a layer of latex on the surface of the silicon wafer, and then drying to form a layer of SiO 2 mask.

[0042] (c) immerse in 5% HF solution by volume to remove the coating on the side without mask;

[0043] (d) Diffuse acceptor element boron to form p on the unmasked side + Diffusion layer 3;

[0044] (e) Soak in 5% HF solution by volume to remove the doped glass 4 formed in the mask and diffusion process;

[0045] (f) p on the silicon wafer + Surface preparation mask 2, the preparation method of the mask is...

Embodiment 3

[0050] This embodiment provides the use of masks to realize p on both sides of the silicon wafer. + and n + A diffusion process comprising the following steps:

[0051] (1) Select the silicon wafer after pretreatment such as cleaning, prepare a mask on one side of the silicon wafer, and remove the mask that is wrapped around the other side after it is made;

[0052] (2) Diffusion of donor elements or acceptor elements on the maskless side to form n + or p +Diffusion layer, and then remove the doped glass formed on the surface of the silicon wafer during the mask and diffusion;

[0053] (3) n formed in step (2) + or p + A mask is prepared on the surface of the diffusion layer, and the mask on the other side is removed after it is made;

[0054] (4) n made in step (3) + or p + The other side of the diffusion layer, that is, the side without a mask, undergoes diffusion of acceptor elements or donor elements to form p + or n + Diffusion layer, then cleaned to remove the ...

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Abstract

The invention discloses a process for realizing p plus and n plus diffusion on both sides of a silicon chip by utilizing a mask, which comprises the steps of selecting the silicon chip after pretreatment, preparing the mask on one side of the silicon chip, diffusing donor elements or acceptor elements on one side without the mask for forming a n plus or p plus diffusion layer, removing the mask, doping glass, then preparing the mask on the diffusion layer, diffusing the donor elements or the acceptor elements on the other side of the diffusion layer for forming the p plus or n plug diffusion layer, removing the mask, doping the glass, and realizing a diffusion structure on the both sides of the silicon chip, wherein one side of the diffusion structure is n plus, and the other side is p plus. The process uses PECVD, magnetron sputtering, electron beam evaporation or spin-coating process before the diffusion process, thereby avoiding the cross contamination between the diffused donor elements and the acceptor elements during the diffusion process, avoiding causing the problems of composite increase and power leakage and being the simple and practical diffusion process.

Description

technical field [0001] The invention belongs to the field of solar cells, in particular to a method of using a mask to realize p + and n + Diffusion process. Background technique [0002] Some high-efficiency battery structures need to realize the diffusion of donor elements on one side of the silicon wafer to form n + Diffusion layer, the other side diffuses acceptor elements, forming p + Diffusion layer; or diffuse acceptor elements on one side to form p + Diffusion layer, the other side diffuses the donor element, forming n + diffusion layer. At present, there are many ways to realize the formation of the diffusion structure, but it is often difficult to avoid the cross-contamination problem between the donor element and the acceptor element during the diffusion process. Contents of the invention [0003] The object of the present invention is to provide a method for realizing p on both sides of a silicon wafer by using a mask. + and n + Diffusion process, which...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/22
Inventor 朱生宾尹海鹏金井升何胜单伟朴松源
Owner JA SOLAR TECH YANGZHOU
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