746 results about "Single chamber" patented technology

The present invention relates to curing of semiconductor wafers. More particularly, the invention relates to cure chambers containing multiple cure stations, each featuring one or more UV light sources. The wafers are cured by sequential exposure to the light sources in each station. In some embodiments, the wafers remain stationary with respect to the light source during exposure. In other embodiments, there is relative movement between the light source and the wafer during exposure. The invention also provides chambers that may be used to independently modulate the cross-linking, density and increase in stress of a cured material by providing independent control of the wafer temperature and UV intensity.

A method, computer readable medium, and system for vapor deposition on a substrate that introduce a first process gas composition to a process space according to a first vapor deposition process, deposit a first film on the substrate, introduce a second process gas composition into a second process space different in size than the first process space, and deposit a second film on the substrate from the second process gas composition. As such, the system includes a process chamber including a first process space having a first volume. The process chamber further includes a second process space that includes at least a part of the first process space and that has a second volume different from the first volume. The first process space is configured for a first chemical vapor deposition, and the second process space is configured for a second chemical vapor deposition.

A single- and dual-chamber module-attachable wafer-handling chamber includes: a wafer-handling main chamber equipped with a wafer-handling robot therein, and adaptors for connecting process modules to the wafer-handling main chamber. The adaptors are detachably attached to the sides of the wafer-handling main chamber, respectively, and the process modules are detachably attached to the adaptors, respectively, so that the process modules can be attached to the wafer-handling main chamber, regardless of whether the process modules are of a single-chamber type or dual-chamber type.

A single- and dual-chamber module-attachable wafer-handling chamber includes: a wafer-handling main chamber equipped with a wafer-handling robot therein, and adaptors for connecting process modules to the wafer-handling main chamber. The adaptors are detachably attached to the sides of the wafer-handling main chamber, respectively, and the process modules are detachably attached to the adaptors, respectively, so that the process modules can be attached to the wafer-handling main chamber, regardless of whether the process modules are of a single-chamber type or dual-chamber type.

Provided are a semiconductor layer manufacturing method and a semiconductor manufacturing apparatus capable of forming a high quality semiconductor layer even by a single chamber system, with a shortened process time required for reducing a concentration of impurities that exist in a reaction chamber before forming the semiconductor layer. A semiconductor device manufactured using such a method and apparatus is also provided. The present invention relates to a semiconductor layer manufacturing method of forming a semiconductor layer inside a reaction chamber (101) capable of being hermetically sealed, including an impurities removing step of removing impurities inside the reaction chamber (101) using a replacement gas, and a semiconductor layer forming step of forming the semiconductor layer, the impurities removing step being a step in which a cycle composed of a replacement gas introducing step of introducing the replacement gas into the reaction chamber (101) and an exhausting step of exhausting the replacement gas is repeated a plurality of times, the impurities removing step being performed at least before the semiconductor layer forming step.

A method and system for plasma-assisted thin film vapor deposition on a substrate is described. The system includes a process chamber including a first process space having a first volume, a substrate stage coupled to the process chamber and configured to support a substrate and expose the substrate to the first process space, a plasma generation system coupled to the process chamber and configured to generate plasma in at least a portion of the first process space, and a vacuum pumping system coupled to the process chamber and configured to evacuate at least a portion of the first process space. The system further includes a process volume adjustment mechanism coupled to the process chamber and configured to create a second process space that includes at least a part of the first process space and that has a second volume less than the first volume, the substrate being exposed to the second process space.

An implantable stimulator and monitor measures a group of heart failure parameters indicative of the state of heart failure employing EGM signals, measures of blood pressure including absolute pressure P, developed pressure (DP=systolic P-diastolic P), and / or dP / dt, and measures of heart chamber volume (V) over one or more cardiac cycles. These parameters include: (1) relaxation or contraction time constant tau (.tau.); (2) mechanical restitution (MR), i.e., the mechanical response of a heart chamber to premature stimuli applied to the heart chamber; (3) recirculation fraction (RF), i.e., the rate of decay of PESP effects over a series of heart cycles; and (4) end systolic elastance (E.sub.ES), i.e., the ratios of end systolic blood pressure P to volume V. These heart failure parameters are determined periodically regardless of patient posture and activity level. The physician can determine whether a particular therapy is appropriate, prescribe the therapy for a period of time while again accumulating the stored patient data for a later review and assessment to determine whether the applied therapy is beneficial or not, thereby enabling periodic changes in therapy, if appropriate. Drug therapies and electrical stimulation therapies, including PESP stimulation, and pacing therapies including single chamber, dual chamber and multi-chamber (bi-atrial and / or bi-ventricular) pacing can be delivered. In patient's prone to malignant tachyarrhythmias, the assessment of heart failure state can be taken into account in setting parameters of detection or classification of tachyarrhythmias and the therapies that are delivered.

Disclosed is an ultrasonic surgical device having a distally / proximally movable fluid management system consisting of single lumen or multiple lumens. The invention provides for the delivery of irrigation fluid or the removal of fluid, debris or vapor from the tissue-effecting portion of the blade while minimizing the loading on the blade. The blades of the surgical device, when excited at a natural blade system frequency, will have modal shapes characterized by longitudinal, transverse and / or torsional motion and will have nodal locations for these motions at positions along the tissue effecting length of the blade. The instrument is designed to allow for the fluid management system to be positioned at one or more motion nodes to facilitate efficient removal of tissue or fluid, which tends to accumulate at such nodes of the ultrasonic surgical blades.

A multi-lumen catheter and method for inserting same in a patient is disclosed. The catheter includes an elongated, central, multi-lumen tube portion having a proximal end and a distal end. The central tube portion has a substantially cylindrical outer shape and is internally segmented into a plurality of lumens. A distal branch portion includes a plurality of single-lumen distal extension tubes. A proximal branch portion includes a plurality of single-lumen proximal extension tubes. Each proximal extension tube has a distal first end and a proximal second end. The distal first end of each proximal extension tube is connected to the proximal end of the central tube portion such that the single lumen of each distal extension tube is in fluid communication with one of the plurality of lumens of the central tube portion. Each lumen of the central tube portion and the lumens of the distal and proximal extension tubes in fluid communication therewith define a flow path through the catheter. Selectively attachable hub connectors are provided for selective attachment to the distal extension tubes and connection of the catheter to a fluid exchange device.

A leadless implantable medical device (LIMD) comprises a housing configured to be implanted entirely within a single local ventricular chamber of the heart near a local apex region. A base on the housing is configured to be secured to tissue of interest, while a distal electrode is provided on the base and extends outward such that, when the device is implanted in the local chamber, the distal electrode is configured to engage the distal apex region at a distal activation site within the conduction network of the adjacent ventricular chamber.

A leadless intra-cardiac medical device (LIMD) includes multiple electrodes that allow for stimulation and sensing of the right ventricle (RV) and sensing of the right atrium (RA), even though it is entirely located in the RV. The LIMD includes a housing having a proximal end configured to engage local tissue in the local chamber and electrodes located at multiple locations along the housing. Sensing circuitry is configured to define a far field (FF) channel between a first combination of the electrodes to sense FF signals occurring in the adjacent chamber. The sensing circuitry is configured to define a near field (NF) channel between a second combination of the electrodes to sense NF signals occurring in the local chamber. A controller is configured to analyze the NF and FF signals to determine whether the NF and FF signals collectively indicate that a validated event of interest occurred in the adjacent chamber.

A leadless intra-cardiac medical device (LIMD) includes a housing configured to be implanted entirely within a single local chamber of the heart.

Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower plate, a bottom shower plate, and an insulator disposed between the top shower plate and the bottom shower plate. In one aspect, the power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top shower plate and the bottom shower plate. In another embodiment, a power source is coupled to the top shower plate and the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support. One embodiment of the method comprises performing in a single chamber one or more of the processes including, but not limited to, cyclical layer deposition, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition; plasma-enhanced chemical vapor deposition; and / or chemical vapor deposition.

A leadless intra-cardiac medical device (LIMD) configured to be implanted entirely within a heart of a patient includes a housing configured to be securely attached to an interior wall portion of a chamber of the heart, and a stabilizing intra-cardiac (IC) device extension connected to the housing. The stabilizing IC device extension may include a stabilizer arm, and / or an appendage arm, or an elongated body or a loop member configured to be passively secured within the heart.

Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower plate, a bottom shower plate, and an insulator disposed between the top shower plate and the bottom shower plate. In one aspect, the power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top shower plate and the bottom shower plate. In another embodiment, a power source is coupled to the top shower plate and the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support. One embodiment of the method comprises performing in a single chamber one or more of the processes including, but not limited to, cyclical layer deposition, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition; plasma-enhanced chemical vapor deposition; and / or chemical vapor deposition.

A leadless intra-cardiac medical device (LIMD) configured to be implanted entirely within a heart of a patient includes a housing configured to be securely attached to an interior wall portion of a chamber of the heart, and a stabilizing intra-cardiac (IC) device extension connected to the housing. The stabilizing IC device extension may include a stabilizer arm, and / or an appendage arm, or an elongated body or a loop member configured to be passively secured within the heart.

One embodiment of a processing system for fabricating compound nitride semiconductor devices comprises one or more processing chamber operable with form a compound nitride semiconductor layer on a substrate, a transfer chamber coupled with the processing chamber, a loadlock chamber coupled with the transfer chamber, and a load station coupled with the loadlock chamber, wherein the load station comprises a conveyor tray movable to convey a carrier plate loaded with one or more substrates into the loadlock chamber. Compared to a single chamber reactor, the multi-chamber processing system expands the potential complexity and variety of compound structures. Additionally, the system can achieve higher quality and yield by specialization of individual chambers for specific epitaxial growth processes. Throughput is increased by simultaneous processing in multiple chambers.

The present invention involves a surgical device and method of use, particularly an assembly and method incorporating a shaped expandable member along the distal region of an ablation device to facilitate ablation of a circumferential region of tissue engaged by the expandable member. The ablation device assembly includes an elongate body with a proximal end portion, a distal end portion, and a longitudinal axis. A contact member is located along the distal end portion of the elongate body. The contact member has a circumferential wall and is expandable from a radially collapsed condition to a radially expanded condition. The contact member also includes a single chamber having a single bulbous section. The single bulbous section has a plurality of longitudinally adjacent circumferential regions wherein adjacent regions have dissimilar wall thicknesses. The ablation device also has an ablation element having an ablative energy source that is located along the distal end portion, wherein the ablation element cooperates with the contact member such that the ablative energy source emits a substantially circumferential pattern of energy through the circumferential wall.

Provided is a durable tissue pH / pCO2 and / or tissue oxygen sensitive probe of sufficient strength to withstand direct tissue pressures in vivo, the probe comprising one or more sensor chambers within a biocompatible, gas-permeable membrane containing together in a single chamber, or in separate chambers, respectively, a pH sensitive fluorophor from which pCO2 level(s) are calculated when the fluorophor is excited and the resulting fluorescence is measured and / or an oxygen sensitive phosphor solution producing oxygen quenchable phosphorescence when excited. Further provided is a tissue pH / pCO2 and / or tissue oxygen detection and measurement system comprising the probe, and methods for use of the probe and the system to directly, rapidly and accurately measure tissue pH / pCO2 and / or tissue oxygen levels in a patient without reliance on blood vessels or fluid protection of the probe.

In one embodiment a method for fabricating a compound nitride semiconductor device comprising positioning one or more substrates on a susceptor in a processing region of a metal organic chemical vapor deposition (MOCVD) chamber comprising a showerhead, depositing a gallium nitride layer over the substrate with a thermal chemical-vapor-deposition process within the MOCVD chamber by flowing a first gallium containing precursor and a first nitrogen containing precursor through the showerhead into the MOCVD chamber, removing the one or more substrates from the MOCVD chamber without exposing the one or more substrates to atmosphere, flowing a chlorine gas into the processing chamber to remove contaminants from the showerhead, transferring the one or more substrates into the MOCVD chamber after removing contaminants from the showerhead, and depositing an InGaN layer over the GaN layer with a thermal chemical-vapor-deposition process within the MOCVD chamber is provided.

The present invention involves a surgical device and method of use, particularly an assembly and method incorporating a peanut or barbell shaped expandable member along the distal region of an ablation device to facilitate ablation of a circumferential region of tissue engaged by the expandable member. The ablation device assembly includes an elongate body with a proximal end portion, a distal end portion, and a longitudinal axis. A contact member is located along the distal end portion of the elongate body. The contact member has a circumferential wall and is expandable from a radially collapsed condition to a radially expanded condition. The contact member also includes a single chamber having first and second bulbous sections separated by a longitudinal mid-section, wherein the first bulbous section has a smaller outside diameter than the second bulbous section when the contact member is in the expanded condition. The ablation device also has an ablation element having an ablative energy source that is located along the distal end portion, wherein the ablation element cooperates with the contact member such that the ablative energy source emits a substantially circumferential pattern of energy through the circumferential wall.

A leadless intra-cardiac medical device (LIMD) includes a housing configured to be implanted entirely within a single local chamber of the heart.

A single chamber fuel cell comprised of a cell arranged in a mixed fuel gas comprised of hydrogen or another fuel gas and oxygen, wherein the cell used is a pn junction type semiconductor having electrodes of a p-type semiconductor with carriers of holes and an n-type semiconductor with carriers of electrons connected to ends of electrical takeout wires, and each of the p-type semiconductor and n-type semiconductor is formed porous to an extent enabling the mixed fuel gas to pass.

A single chamber headphone apparatus and earcup design is provided which enhances wearer comfort, reduces headphone weight, facilitates ease of use, maintenance and operation by providing an improved internal chamber and battery cap configuration. Sound quality is improved by eliminating acoustic problems associated with two-chamber headset designs. A volume balance control is also provided.

A two or more chambered airbag provides much improved safety and / or performance. A modified single chamber airbag can be used as the primary chamber of the two-chamber airbag. A piece of fabric of appropriate size is sewn to the inside or outside surface of the front panel of the primary chamber to create the secondary chamber. One or more apertures are opened between the primary and secondary chambers. In order for the secondary chamber to inflate properly, the tethers of the primary chamber are shortened to 50% to 80% of their original length. The size or location of the tether sewing to the inner surface of the front panel of the primary chamber is also adjusted to create a desired shape of the secondary chamber when deployed.

The present invention relates to a process of fabricating a semiconductor device, including steps of providing a first semiconductor wafer; depositing on the first semiconductor wafer a layer comprising a high-K dielectric material layer; depositing on the layer comprising a high-K dielectric material a polysilicon or polysilicon-germanium layer; and forming a gate stack by plasma etching both a portion of the polysilicon or polysilicon-germanium layer and a portion of the layer comprising a high-K dielectric material in a single chamber. In one embodiment, the step of plasma etching is carried out without moving the first wafer from the chamber. In another embodiment an unwanted residual high-K dielectric material is removed by applying a low power plasma treatment.

An upflow microbial fuel cell in one embodiment is comprised of a generally cylindrical cathode chamber containing a cathode sitting atop a generally cylindrical anode chamber containing an anode, with a proton exchange membrane separating the two chambers, so that as influent is passed upwardly through the anode chamber electricity is created in a continuous process not requiring mixing such as with a mechanical mixer or the like. Electrodes are connected to each of the anode and the cathode for harvesting the electricity so created. Effluent may be recirculated through the anode chamber by a second inlet and outlet therein. A multiphase fuel cell includes a plurality of electrode couples arranged in a single chamber with an influent inlet near its bottom and an effluent outlet near its top, with the electrode couples connected in series to generate electricity at higher voltages. In another embodiment, the cathode chamber—preferably U-shaped—is positioned inside the anode chamber.

Disclosed herein is a method of improving the adhesion of a hydrophobic self-assembled monolayer (SAM) coating to a surface of a MEMS structure, for the purpose of preventing stiction. The method comprises treating surfaces of the MEMS structure with a plasma generated from a source gas comprising oxygen and, optionally, hydrogen. The treatment oxidizes the surfaces, which are then reacted with hydrogen to form bonded OH groups on the surfaces. The hydrogen source may be present as part of the plasma source gas, so that the bonded OH groups are created during treatment of the surfaces with the plasma. Also disclosed herein is an integrated method for release and passivation of MEMS structures which may be adjusted to be carried out in a either a single chamber processing system or a multi-chamber processing system.

A two or more chambered airbag provides much improved safety and / or performance. A modified single chamber airbag can be used as the primary chamber of the two-chamber airbag. A piece of fabric of appropriate size is sewn to the inside or outside surface of the front panel of the primary chamber to create the secondary chamber. One or more apertures are opened between the primary and secondary chambers. In order for the secondary chamber to inflate properly, the tethers of the primary chamber are shortened to 50% to 80% of their original length. The size or location of the tether sewing to the inner surface of the front panel of the primary chamber is also adjusted to create a desired shape of the secondary chamber when deployed.

A method of measuring differential pressure between a left ventricle and an aorta across an aortic valve for diagnosis of aortic stenosis using a coaxial dual lumen pigtail catheter that utilizes coaxial construction incorporating a thin wall guiding catheter technology for the outer lumen and using a strong braided diagnostic technology for the central lumen to accommodate high-pressure injections. The catheter includes a manifold body to provide for connection to each of the dual lumens. The distal end of the coaxial dual lumen pigtail catheter tapers to a more flexible portion that is perforated by spiral side holes to provide for more undistorted pressure readings in the left ventricle. The coaxial dual lumen pigtail catheter also utilizes proximal straight sideholes at the end of the dual lumen portion and a taper between the dual lumen portion and the single lumen portion.