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Avalanche photodiode and manufacturing method thereof

An avalanche photoelectric and diode technology, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problem that the edge area of ​​zinc expansion is difficult to control, and achieve the effect of solving the difficulty of production

Inactive Publication Date: 2019-10-11
武汉光谷量子技术有限公司
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Problems solved by technology

[0004] In view of the defects existing in the prior art, the object of the present invention is to provide an avalanche photodiode and its manufacturing method, which can effectively solve the problem that the edge area is difficult to control when zinc is diffused

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  • Avalanche photodiode and manufacturing method thereof
  • Avalanche photodiode and manufacturing method thereof
  • Avalanche photodiode and manufacturing method thereof

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Embodiment Construction

[0040] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0041] figure 1 It is a schematic structural diagram of an avalanche photodiode in an embodiment of the present invention, as figure 1 As shown, on the one hand, an embodiment of the present invention provides an avalanche photodiode, and the avalanche photodiode includes:

[0042] A substrate 1 on which a first contact layer 7 is provided;

[0043] The second contact layer 8, which is plated on the first contact layer 7, and the second contact layer 8 is provided with a first window 81;

[0044] The passivation layer 9, which is plated on the second contact layer 8, and the passivation layer 9 is provided with a second window 91, the cross-sectional area of ​​the second window 91 is larger than the cross-sectional area of ​​the first window 81, and the second window 91 The second window 91 and the first window 81 are stepped; and

[0045]...

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Abstract

The invention discloses an avalanche photodiode and a manufacturing method thereof. The method comprises the following steps: manufacturing a substrate, a first contact layer and a second contact layer; evaporating a passivation layer on the second contact layer; etching the passivation layer and the second contact layer to form a second window and a first window, and enabling the second window and the first window to be step-shaped; performing zinc diffusion through the second window and the first window, and controlling the diffusion depth, so that a diffusion region comprising an edge region and a central region is formed in the first contact layer, and the diffusion depth of the edge region is 300-900 nanometers smaller than that of the central region. According to the invention, the problem that the edge area is difficult to control during zinc diffusion and the problem of edge pre-breakdown caused by the problem can be effectively solved.

Description

technical field [0001] The invention relates to the technical field of zinc diffusion technology, in particular to an avalanche photodiode and a manufacturing method thereof. Background technique [0002] The zinc diffusion process is a technique used to define p-type doped regions in the manufacture of various optoelectronic and electronic devices. Taking the planar APD (Avalanche Photodiodes) based on indium phosphide (InP) as an example, the epitaxial structure (the distribution of materials in each layer in the vertical direction) can have some different changes, and the manufacturing process is based on epitaxial growth. Determine the thickness and doping of each layer except the top layer, reserve a certain thickness of low-doped or non-doped semiconductor material as the top layer, and then use the zinc diffusion process to do p-type doping on the part of the top layer close to the surface, the top layer of semiconductor The part of the material that is not doped wit...

Claims

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Application Information

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IPC IPC(8): H01L31/02H01L31/107H01L31/18
CPCH01L31/02005H01L31/107H01L31/184
Inventor 曾磊王肇中
Owner 武汉光谷量子技术有限公司
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