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Open tube zinc diffusing method for producing indium-gallium-arsenic photoelectric detector

A technology of photodetector and diffusion method, which is applied in semiconductor/solid-state device manufacturing, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of expensive equipment and materials, achieve low manufacturing cost, simple diffusion process, and launch convenient effect

Inactive Publication Date: 2003-04-09
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There are many foreign papers on this aspect, and the more practical one is to use MOCVD system, use dimethyl zinc (DMZ) as Zn diffusion source, dilute phosphine as protective gas, and carry out diffusion in low vacuum, but the equipment and materials Both are expensive and require strict safety protection measures, so the open-tube zinc diffusion method under normal pressure has always been the key process technology for the manufacture of InGaAs photodetectors.

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  • Open tube zinc diffusing method for producing indium-gallium-arsenic photoelectric detector
  • Open tube zinc diffusing method for producing indium-gallium-arsenic photoelectric detector

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Embodiment Construction

[0018] The best embodiment of the present invention is as figure 1 shown, including the following steps:

[0019] ① First raise the temperature of the diffusion furnace 1 to 400 to 600°C, and use a commercially available general-purpose semiconductor diffusion furnace to raise the temperature to 500°C in the embodiment;

[0020] ② Feed N into the diffusion quartz tube 2 in the diffusion furnace 1 2 and H 2 Mix the protective gas, and the diffusion quartz tube of the embodiment is made into an open-tube diffusion quartz tube structure, and one end of the open-tube diffusion quartz tube is designed as a thin tube structure, which is easy to pass into N 2 and H 2 gas, N 2 and H 2 The gas is a diffusion protection gas; the other end is designed as an open tube structure, which is convenient for pushing and pushing out the diffusion boat 3;

[0021] ③ Diffusion source 4 and InP / InGaAs epitaxial semiconductor wafer 5 are packed into a covered diffusion boat, and the diffusion ...

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Abstract

This invention discloses an open tube zinc diffusion method for the production of In-Ga-As photo-electric detectors relating to the diffusion technique of semiconductor photoelectric apparatus. The method includes applying a structure of open tubew diffusion quartz tube structure to intake the protecting gases of hydrogen and nitrogen, and putting zinc and semiconductor wafers into a carbon diffusion boat to carry out high temperature diffusion under normal pressure, and finishing the zinc diffusion technique of the semiconductor wafer. This invention has uniform and repeated diffusion, result, good property of junction with simple production technique and dimenision of semiconductor wafer can be increased along with the enlarging of the diffusion furnace, and the diffusion boat and the source can be used repeatedly.

Description

technical field [0001] The invention relates to an open-tube zinc (Zn) diffusion method for manufacturing indium gallium arsenide (InGaAs) photodetectors in the field of semiconductor photoelectric device manufacturing, and is particularly suitable for the zinc (Zn) diffusion process of semiconductor photoelectric devices. Background technique [0002] The Zn diffusion process in the traditional InGaAs photodetector manufacturing is to put the Zn diffusion source and the epitaxial wafer into the quartz tube at the same time to evacuate and seal the tube, push the diffusion into the heated diffusion furnace, and then break the quartz tube to take out the epitaxial wafer to complete . This method is cumbersome, requires a skilled quartz worker, and because it is difficult to evacuate and seal the quartz tube, it is not easy to diffuse large-sized sheets. In recent years, both at home and abroad are studying the open-tube Zn diffusion technology through different ways, but so ...

Claims

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Application Information

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IPC IPC(8): H01L21/225H01L31/18
CPCY02P70/50
Inventor 曾庆明李献杰乔树允王全树
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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