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Device for zinc diffusion and zinc diffusion method

A diffusion method and diffusion source technology, which is applied in the field of semiconductor photoelectric devices, can solve the problems of poor surface quality, complicated operation, and long time, and achieve the effects of less surface damage, simple operation, and low cost

Active Publication Date: 2018-04-06
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

But compared with the diffusion method of the present invention, the open tube diffusion has complex operation, poor surface quality and long time

Method used

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  • Device for zinc diffusion and zinc diffusion method
  • Device for zinc diffusion and zinc diffusion method
  • Device for zinc diffusion and zinc diffusion method

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Embodiment Construction

[0030] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, these embodiments are provided to explain the principles of the invention and its practical application, so that others skilled in the art can understand various embodiments of the invention and various modifications as are suited to particular intended uses. The same reference numerals may be used to refer to the same elements throughout the specification and drawings.

[0031] In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a "first" or "second" feature may expressly or implicitly include one or more of these f...

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Abstract

The invention discloses a device for zinc diffusion and a zinc diffusion method. The method comprises: an epitaxial wafer and a zinc diffusion source are placed in a reaction cavity, wherein a distance between the zinc diffusion source and the edge of the epitaxial wafer is a predetermined distance; carrier gas is inputted and the working pressure of the reaction cavity is adjusted to be a predetermined pressure; the temperature of the reaction cavity is heated to be a first set temperature and the first set temperature is kept for first set time, so that the epitaxial wafer and the zinc diffusion source are preheated; the temperature of the reaction cavity is heated to be a second set temperature and the second set temperature is kept for second set time; the temperature of the reaction cavity is reduced to be a third set temperature and the third set temperature is kept for third set time; and the reaction cavity is cooled continuously and thus the temperature of the reaction cavityis reduced to be below a predetermined temperature to complete zinc diffusion. Therefore, the operation becomes simple and the cost is low; the surface of the prepared finished product is protected from being damaged; the junction depth is easy to control; and batched and continuous production of the devices can be realized conveniently.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronic devices, and in particular relates to a zinc diffusion device and a zinc diffusion method thereof. Background technique [0002] Optical fiber transmission systems are widely used due to their trusted optical properties of low loss, large capacity, long distance and low dispersion. III-V compound semiconductor photodetectors play the most important role as receivers in optical communication systems and have been developed rapidly. As the optical fiber transmission system continues to develop in the direction of low loss, large capacity and long distance, it is required to have low dark current, high sensitivity and fast response. The PN junction is one of the most important electrical structures in III-V compound semiconductor photodetectors. The preparation of planar InP-based detectors is formed by p-type doping in n-type materials through a zinc diffusion process. The dopi...

Claims

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Application Information

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IPC IPC(8): H01L21/225H01L21/67H01L31/109H01L31/18
CPCH01L21/225H01L21/67011H01L31/109H01L31/184Y02P70/50
Inventor 王梦雪谭明杨文献代盼吴渊渊陆书龙
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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