High-gain bandwidth product optical detector and manufacturing method thereof
A technology of photodetector and manufacturing method, applied in the direction of final product manufacturing, sustainable manufacturing/processing, semiconductor devices, etc., can solve problems such as low gain, and achieve the effect of high gain bandwidth product
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[0029] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.
[0030] see figure 1 As shown, an embodiment of the present invention provides a method for manufacturing a photodetector with a high gain-bandwidth product, comprising the following steps:
[0031] Step S1, on the substrate, sequentially grow a buffer layer, a first graded layer, an active layer, a second graded layer, a first functional layer, a second functional layer, a diffusion control layer and a top layer to form an epitaxial structure.
[0032] Specifically, see figure 2 As shown, on a semi-insulating (S.I., semi-insulating) indium phosphide InP substrate, epitaxial growth such as MBE (Molecular Beam Epitaxy) or metal-organic compound chemical vapor deposition (MOCVD (Metal-organic Chemical Vapor Deposition)) technology, growing the buffer layer, the first graded layer, the active layer, the second graded layer, the first functional...
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