89 results about "Tin selenide" patented technology

The invention discloses a tin selenide nano material, a preparation method and application thereof. Tin selenide is synthesized by utilizing a simple, mild and green method, further, hydrophilic ligands are modified in an ultrasonic method and tin selenide nano-sheets with good water dispersibility are synthesized. The nano material has strong near-infrared absorption property and is capable of converting effective near-infrared laser into thermal energy; the photo-thermal conversion efficiency is up to 29.8%; meanwhile, the nano material has good photo-thermal stability and can be applied to light-heat treatment for cancer cells. Meanwhile, the nano material has big specific surface area of a two-dimensional laminated structure and higher medicine-carrying capacity; the nano medicine complex is capable of realizing medicine release effects of pH value response and photo-thermal response and can be utilized as a medicine carrier for chemotherapy of cancer cells. The nano material can be applied to photoacoustic imaging and infrared thermal imaging and realizes photo-thermal and medicine integrated treatment of imaging guidance.

The invention provides a method for preparing a tin selenide photoelectric thin film material, belonging to the technical field of photoelectric thin film preparation. The method comprises the following steps: firstly washing a chip, then putting SnCl2.2H2O and SeO2 into solvents, obtaining a precursor thin film on the chip by a spin coating method and drying the precursor thin film, putting the precursor thin film into a closed container with diamide hydrate, ensuring the precursor thin film sample not to be contacted with diamide hydrate, heating the closed container filled with the precursor thin film sample, taking out the sample and cooling and drying the sample, thus obtaining the tin selenide photoelectric thin film. The method has the following beneficial effects: the method dispenses with the conditions of high temperature and high vacuum, has low requirements for apparatuses, is low in production cost and high in production efficiency and is easy to operate; the tin selenide photoelectric thin film has better continuity and uniformity; the components and structure of the target product are easy to control by the new process; and the production method which is low in cost and can realize industrialization is provided for preparing the tin selenide photoelectric thin film with high performance.

The invention relates to a solution phase method for synthesizing a tin selenide monocrystal nanowire, and belongs to the technical field of inorganic compound semiconductor nano material. Bis[bis(trimethyl silicon alkyl) amino] tin (II) and selenizing organic phosphine are used as raw materials to rapidly synthesize the tin selenide monocrystal nanowire through assistance of a catalyst at 250-310 DEG C in 1-2 min, in oil amine or a mixed solvent of oil amine and trioctylphosphine phosphorus oxide. The tin selenide monocrystal nanowire synthesized by the invention has advantages of small diameter (average diameter of 21 nm), adjustable average length from hundreds of nanometers to tens of microns, uniform appearance, good crystallinity and good colloidal dispersion, etc. At the same time, the invention has simple process, rapid synthesis (only 1-2 min), no intermediate product, convenient operation and easy popularization, and is suitable for industrial production. The tin selenide monocrystal nanowire prepared by the method provided by the invention has good optical properties, and can be used in the manufacture of optoelectronic devices or solar cell materials.

The invention relates to a tin selenide @ carbon nano fiber composite material, and a preparation method and application thereof, and solves the technical problems that the existing material preparation method is complex and the cost is high. In-situ generated tin selenide is uniformly dispersed in carbon nano fiber, and the diameter of the carbon nano fiber is 300-400 nanometers. The invention also provides the preparation method and application of the tin selenide @ carbon nano fiber composite material. The tin selenide @ carbon nano fiber can be widely used in the field of preparation of electrode materials.

The invention discloses a one-dimensional tin selenide nanoarray as well as a preparation method and an application thereof. The one-dimensional tin selenide nanoarray consists of tin selenide nanowires growing in the same direction and arranged in an array form. The one-dimensional tin selenide nanoarray is prepared by depositing tin selenide as a raw material under the action of a catalyst with a chemical vapor deposition method, is applicable to NTC (negative temperature coefficient) thermistors and has an excellent negative temperature coefficient. The preparation method of the one-dimensional tin selenide nanoarray has the advantages of low cost, simple synthesizing step, high speed, good crystallinity and controllable morphology.

The invention belongs to the field of precision processing and manufacturing of optical elements, and relates to a processing method of an L-shaped ZnSe (zinc selenide) turning prism, which solves the problem of the classical optical processing method that the polyhedron prism with complicated structure is difficultly processed. The processing method mainly comprises the following steps of according to the completing size of the prism, calculating the initial structure of a blank, and using an abrasive wire sawing machine to cut the initial structure; grinding the upper end surface and the lower end surface of the blank, and reducing the thickness; manufacturing a fixture and a flying cutter disc, wherein the fixture is used for fixing the prism, and the flying cutter disc is used for clamping a diamond cutter; positioning and fixing the blank and the fixture of the turning prism on a precision turntable of a lathe, and forming a diamond flying cutter turning type turning prism processing system; designing and implementing a turning processing path, and adopting a rough turning and precision turning two-step processing method to form. The processing method has the advantage that under the condition of guaranteeing of the part accuracy, the production efficiency is improved, and the labor intensity is decreased.

The present invention describes a method for producing p-type light absorbing semiconducting copper zinc tin selenide / sulfide (Cu2(ZnxSn2-x)(SySel-y)4) (CZTS for short) through utilizing electrochemical deposition. The p-type light absorbing semiconducting copper zinc tin selenide / sulfide can be used in manufacturing solar battery when combined with an n-type inorganic or organic semiconductor layer. The method comprises using one step of electroplating or a series of deposition to produce low-cost large-are CZTS solar battery without using an expensive and complex deposition technology or highly toxic and highly flammable chemicals in the manufacturing process. According to the method of the present invention, the cost and energy requirement in manufacturing the solar battery are reduced.

The invention discloses a two-dimensional tin selenide nanosheet-based surface enhanced Raman substrate and a production method thereof. The surface enhanced Raman substrate sequentially comprises a silicon layer, a silicon dioxide layer and a tin selenide layer from bottom to top, wherein the tin selenide layer is a monolayer tin selenide nanosheet or a few-layer tin selenide nanosheet. The method comprises the following steps: stripping the SnSe2 nanosheet with a certain thickness from a block SnSe2 material, and transferring the SnSe2 nanosheet onto the silicon dioxide layer of a substrate material, wherein the substrate material is a silicon dioxide layer-containing silicon sheet. The surface enhanced Raman substrate has the advantages of obvious Raman enhancement effect, high repeatability and low cost, and the production method has the advantages of simplicity and easiness in control.

The invention discloses a tin selenide and tin oxide composite material and a preparation method and application thereof. The method comprises the following steps that a selenium-containing alkaline solution and a tin-containing acid solution are mixed according to the selenium-tin molar ratio of 1:1, heating is conducted to reach the temperature of 70-100 DEG C, stirring is conducted, reacting is conducted, precipitates obtained through reacting are washed, filtered, dried and calcined at 300-400 DEG C, and the tin selenide and tin oxide composite material is obtained. The tin selenide and tin oxide composite material serving as a sodium (lithium) ion battery cathode material has an excellent electrochemical property, the preparation method of the material is simple, the cost is low, and the material has a wide industrial application prospect.

The invention relates to a preparation method of stannous selenide nanospheres, belonging to the technical field of nano material preparation. The method comprises the following steps: uniformly mixing tin power and selenium powder, and pressing into a pressing block; putting the pressing block in a graphite pot, and putting the graphite pot into a copper pot anode in a reaction chamber of a direct-current arc discharge device; introducing circulating cooling water into the condensation wall and copper pot anode; carrying out discharge reaction in argon or / and nitrogen for 3-5 minutes while keeping the discharge voltage at 20V and the current at 100A; and after the reaction finishes, passivating in an argon environment, and collecting the grey-black powder SnSe nanospheres on the side surface of the inner cavity of the condensation wall. The sample prepared by the method has the advantages of high purity and favorable crystallinity. The preparation process does not need any substrate, template or catalyst, and thus, is environment-friendly. The method has the advantages of short preparation time, low energy consumption, low cost and high repeatability. The product has potential application value in the aspects of solar cell conversion, holographic recording, near-infrared photoelectric devices, recyclable lithium ion batteries and the like.

A memory device (100), such as a PCRAM, including a chalcogenide glass backbone material with germanium telluride glass (18) in contact with a metal-chalcogenide (20) such as tin selenide and methods of forming such a memory deviceare disclosed.

The invention discloses a composite cathode material for lithium ion / sodium ion batteries and a preparation method of the composite anode material. The composite cathode material is a tin selenide / carbon paper composite material which is obtained by electrochemical deposition with carbon paper serving as a working electrode and an aqueous solution of tin containing inorganic salt and lactic acid or sodium lactate. In the tin selenide / carbon paper composite material prepared according to the method, tin selenide nanoparticles are uniformly distributed on a carbon paper skeleton without adhesives and current collectors; the tin selenide / carbon paper composite material can be directly used as the cathode material for the lithium (sodium) ion batteries and has excellent flexibility and electrochemical performances.

The present invention provides a tin selenide thin film transverse thermoelectric effect-based light and heat detector. The detector comprises a detecting element, metal electrodes and a metal lead; the detecting element comprises an oxide single-crystal substrate and a tin selenide single-crystal thin film which is deposited on the oxide single-crystal substrate and is obtained through c-axis inclined growth; and the two metal electrodes are symmetrically arranged on the upper surface of the tin selenide single-crystal thin film, wherein the metal electrodes are connected with the input end of a voltmeter through metal conductors. According to the tin selenide thin film transverse thermoelectric effect-based light and heat detector of the invention, a binary material, that is, tin selenide, is deposited on the substrate through a pulsed laser deposition technology, so that the tin selenide single-crystal thin film formed through c-axis inclined growth is obtained; and the light and heat detector is fabricated through using the lateral thermoelectric effect of the tin selenide single-crystal thin film. The detecting element of the detector has the advantages of simple structure, noneed for cooling and pressure biasing components, simple preparation process and low cost. The light and heat detector is wide in response band, is high in detection sensitivity, has excellent detecting performance under continuous light irradiation, and can achieve simultaneous light and heat detection.

The invention provides a hydrothermal preparation method capable of controlling the thickness of tin selenide with a sheet structure. The hydrothermal preparation method comprises the following steps:dissolving tartaric acid in distilled water, then adding tin dichloride, and carrying out stirring until a solution is clear and transparent so as to obtain a solution A; then successively adding selenium dioxide, sodium hydroxide and sodium borohydride into distilled water so as to prepare a solution B; slowly adding the solution A into the solution B and carrying out stirring; then adding a morphological controlling agent 1,10-phenanthroline, 2,2-dipyridine or 4,4-dipyridyl, carrying out stirring, and then carrying out a reaction at 180 DEG C in a hydrothermal reaction vessel for 6-24 h; and successively carrying out centrifuging, washing and drying to obtain black tin selenide powder. According to the invention, the thickness of flaky SnSe is controlled by adding the morphological controlling agent in hydrothermal process; raw materials and the produced solutions in the whole process are easy to treat and have no pollution; and the hydrothermal preparation method is low in preparation cost, simple in operation process and high in repeatability, and can prepare high-purity flaky tin selenide.

The present invention describes a method of producing a p-type light-absorbing semiconductor copper zinc tin selenide / sulfide (Cu2(ZnxSn2-x)(SySe1-y)4) (abbreviated CZTS) with electrochemical deposition. It can be used in the production of solar cell when combined with an n-type inorganic or an organic semiconductor layer. The present method comprises a one-step or a sequence of depositions using electroplating to fabricate a low-cost and large-area CZTS solar cell, without using expensive and complicated deposition techniques or highly toxic and flammable chemicals in the production process. The present method significantly reduces the cost and energy requirement for production of solar cell.

The invention belongs to the technical field of electrothermal materials, and particularly relates to a Cu-Te (copper-thulium) nanocrystalline / Cu2SnSe3 (copper and tin selenide) electrothermal composite material and a preparation method thereof. The volume ratio of the Cu-Te nanocrystalline in the composite material is 0.2 to 1.2%. The prepared Cu-Te (copper-thulium) nanocrystalline / Cu2SnSe3 electrothermal composite material has the advantages that the better electrothermal property is realized, and the ZT value of the Cu2SnSe3 matrix is greatly improved; the operation of the required preparation technology is simple, the parameters are controllable, and the composite material is suitable for larger-scale production.

The invention discloses SnSe square nanosheets and a preparation method thereof, belonging to the technical field of preparation of nanometer materials. The preparation method comprises the following steps: uniformly mixing tin powder and selenium powder, and pressing into a pressing block; arranging the pressing block in a graphite pot, putting the graphite pot into a copper pan anode in a reaction chamber of a direct current arc discharge device, wherein a tungsten rod cathode is opposite to the copper pan anode; introducing circulating cooling water into the cooling wall; carrying out a discharge reaction in the mixed gas of argon and nitrogen, wherein the discharge voltage is 18V, the current is 80-85A, and reacting for 1-2 minutes; and passivating in an argon atmosphere, and collecting the ash black powder to serve as the SnSe square nanosheets on the inner side of the top cover of the condensation wall. The sample purity is high, the crystallinity is high, and the shape and size are uniform; any substrate, template and catalyst are not needed in the preparation process, and the method is environment-friendly; and the method is short in preparation time, low in energy consumption, low in cost and high in repeatability. The prepared product has potential application values in aspects such as solar cell conversion, holographic record and recycled lithium ion batteries.

The invention discloses a preparation method of an antimony selenide thin-film solar cell. The method comprises the steps: preparing a tin dioxide hydrocolloid dispersion liquid and a cadmium chlorideaqueous solution according to a certain mass ratio; sequentially preparing a tin dioxide electron transport layer and a cadmium chloride modification layer on clean patterned ITO conductive glass through a spin coating method, and performing drying and thermal treatment to obtain a substrate; putting antimony selenide powder and the substrate into a quartz tube, putting the quartz tube into an atmosphere furnace, performing vacuum pumping of the cavity, performing heating and heat preservation, opening an upper cover of the atmosphere furnace immediately after heat preservation is completed so that the cavity is rapidly cooled to the room temperature, taking out the substrate, and completing film deposition to obtain an antimony selenide film; finally, evaporating a layer of gold on the surface of the antimony selenide film through a vacuum thermal evaporation method to serve as a battery electrode, and obtaining an antimony selenide film solar cell. The method has the advantages that(1) the cadmium chloride solution is spin-coated to form the film as a modification layer, so a high-efficiency battery device is obtained; (2) the operation is simple, the thin film preparation process consumes less time, the efficiency is high, the requirement on the experimental environment is low, and the prepared battery device has stable performance.

The invention discloses a transition metal ion concentration gradient doped zinc sulfide / zinc selenide and a preparation method thereof. The active ion of the laser material is one or more of transition metal ions Tm<2+>, Cr<2+>, Co<2+> and Fe<2+>, and the doping concentration of the transition metal ions on two end surfaces of the laser material is in exponential distribution from high to low and is 10<16>-10<20> ions / cm<3>. The material has the characteristics of wide absorption and emission bandwidth and large absorption and emission section, and can obtain ultra-short and ultra-fast laser output with high peak power. One end of the laser material with large doping concentration is attached to a heat sink, so that heat energy generated when incident light enters the laser gain material can be quickly taken away, thus the heat effect produced by laser is reduced, and efficient laser output is achieved.

The invention relates to a method for quickly synthesizing a tin selenide nano sheet by microwave assistance. The method comprises the following steps of (1), taking and mixing stannous chloride dihydrate, selenium powder, potassium hydroxide and ethylene glycol, and then heating in an oil bath; (2), continuously adding potassium borohydride, heating in the oil bath until no air bubbles, and cooling to room temperature; (3), next, transferring into a microwave oven, heating by a microwave, cooling, separating, washing and drying, so that a target product is subsequently obtained. Compared with the prior art, the method adopts the microwave for carrying out a reaction and heating to control the synthesis of the tin selenide nano sheet, is simple in process, quick in synthesis, higher in yield, and the like.

The invention relates to the technical field of thin film preparation, in particular to a tin selenide thin film and a preparation method thereof. The thin film is prepared through electrochemical deposition on ITO substrates by using an electrochemical method. According to the tin selenide thin film prepared by using the electrochemical method, compared with a current method, the preparation method has the advantages of being low in cost, low in energy consumption, low in requirement for instrument and equipment, high in production efficiency, easy to operate and the like.

The invention relates to a single-crystal tin selenide pyroelectric thin film and a preparing method thereof, and belongs to the field of pyroelectric materials. The preparing method of the single-crystal tin selenide pyroelectric thin film includes the following steps of taking a substrate, putting the substrate in cleaning liquid for ultrasonic cleaning for 20 minutes, drying the substrate for 2hours at 60-150 DEG C after cleaning, taking out the substrate to be naturally cooled, putting the processed substrate onto a spinner, dropwise adding dispersion liquid onto the surface of the substrate, conducting spinning for 10-60 seconds, taking out the substrate after spinning, drying the substrate for 5-10 minutes at 200 DEG C to obtain a buffering layer substrate, putting a tin selenide sputtering target material and the prepared buffering layer substrate into a high-vacuum multifunctional magnetron sputtering film coating instrument for vacuumizing, heating the buffering layer substrate, and introducing inert gas for sputtering for 20-60 minutes to obtain the single-crystal tin selenide pyroelectric thin film. The preparing method has the advantages that the preparing process is simple, and the prepared single-crystal tin selenide pyroelectric thin film is high in single crystallinity and power factor.

The invention relates to a preparation method and application of a complex sodium ion battery negative material. The preparation method comprises the following steps: weighing 1-2 parts of chlorella and 1 parts of tin salt to add into deionized water according to raw material part by mass ratio, magnetically stirring and centrifuging, washing precipitate, and drying in an oven to obtain a laurel-green solid sample; grinding the solid sample as powder, mixing with 4-12 parts of selenium powder, placing in an alundum boat to calcining, thereby obtaining stannic selenide-stannous selenide-chlorella derived carbon compound; mixing and grinding the stannic selenide-stannous selenide-chlorella derived carbon compound, the conductive agent super P-carbon, and adhesive CMC, coating on the copper foil to assemble as a button cell. Through the determination, after circularly charging / discharging for 600 times at the voltage of 0.01-3.0V and the large current density of 1A / g, the specific capacity is stabilized at 300 mAh / g and more, the capacity retention ration reaches up to 85.7%; the preparation method disclosed by the invention is extensive in raw material source, low in cost, capable ofproducing in large scale and conforms to an environment requirement.

The invention discloses a preparation method and application of a carbon-coated tin selenide negative electrode material, and belongs to the technical field of sodium ion batteries. The SnSe semiconductor material synthesized by calcining is coated with a compact and uniform carbon layer on the surface by adopting a high-energy ball milling and annealing treatment method, so that the electrochemical properties such as reversible specific capacity and cycle performance are greatly improved. Through a high-energy ball milling method, while the particle size of SnSe material particles is reduced,a uniform carbon source is introduced to the surface of the material, and a product can be obtained through annealing treatment. The preparation method disclosed by the invention is easy to operate,simple in process and low in cost, so that the invention has a wide application prospect. The prepared composite material has good electrochemical properties, including relatively high reversible specific capacity, good cycle performance and the like.

The invention discloses a preparation method and application of a tin selenide-selenium-doped polyacrylonitrile compound potassium ion battery negative electrode material, the experimental process is simple and convenient to operate, and the conditions are controllable, and the technical scheme is as follows: blending and stirring a certain amount of a tin source, polyacrylonitrile and N-N dimethylformamide, then carrying out electrospinning to obtain PAN / SnCl2 composite fibers, and further calcining and selenizing to obtain the tin selenide-selenium-doped polyacrylonitrile compound potassium ion battery negative electrode material. The negative electrode material of the potassium ion battery is stable in long cycle performance, and the specific capacity is still stabilized at 397 mAh / g after more than 1000 cycles of charge and discharge cycles under the current density of 0.5 A / g; and the specific capacity can still be stabilized at 301 mAh / g after 2500 cycles of charging and discharging under the current density of 1 A / g.

The invention relates to a polymorphic gallium antimony-tin selenide multilayer nano-composite phase change material and preparation and application of the polymorphic gallium antimony-tin selenide multilayer nano-composite phase change material. For a Ga30Sb70 / SnSe2 nano-composite multilayer phase change film, SnSe2 films and Ga30Sb70 films are arranged alternately to form a multilayer-film structure, wherein the thickness of each SnSe2 film is between 5 nm and 35 nm, and the thickness of each Ga30Sb70 film is between 5 nm and 35 nm; the total thickness of the Ga30Sb70 / SnSe2 nano-composite multilayer phase change film is between 50 nm and 70 nm, and the Ga30Sb70 / SnSe2 nano-composite multilayer phase change material is prepared with a magnetron sputtering method and can be applied to high-density phase change random access memories with polymorphic performance. Compared with the prior art, the material has the multistage phase change characteristic, and the memory density of the PCRAM can be greatly improved; the material has higher crystalline state and amorphous state resistance, and operation power consumption of the PCRAM can be reduced; compared with a traditional phase change memory material, heat stability is improved, and crystallization speed is increased.

The invention relates to a preparation method of urchin-like tin selenide, comprising the main steps of dissolving suitable tin salt in an alcohol solvent, adding suitable selenium salt into the aforementioned mixed solvent, mixing them well, adding suitable oleic acid and oleylamine as surfactants into the mixed solution, adjusting growth process of crystal, and adding the mixed reaction materials into a hydrothermal reactor to perform hydrothermal reaction so as to obtain the urchin-like tin selenide. The preparation method is simple, low in cost and high in efficiency and is suitable for preparing IV-VI compounds; when used as an electrode material for supercapacitors, the urchin-like tin selenide shows excellent energy-storing performance.

The invention discloses a precipitation method for synthesizing tin selenide powder at room temperature. The precipitation method comprises the following steps: dissolving tartaric acid, EDTA (Ethylene Diamine Tetraacetic Acid) or citric acid in distilled water; adding tin selenide and stirring till dissolution to obtain a solution A; adding selenium dioxide, sodium hydroxide and sodium borohydride into the distilled water in sequence to obtain a solution B; slowly adding the solution A into the solution B; stirring for 10 to 20 minutes; performing centrifugal separating, and collecting a sample; then, placing the sample into a drying oven for drying; then, naturally cooling to room temperature; drying to obtain black tin selenide powder. In the entire production process, raw materials andthe produced solutions are easy to treat and free from pollution; the method has the advantages of low preparation cost, simple operation process, short experiment time and high repeatability, and high-purity tin selenide powder can be prepared.

The invention discloses a spiral-dislocation-driven preparation method for growing spiral laminar tin selenide nanosheets. A solvent-process technical line is utilized to prepare the spiral laminar tin selenide nanosheets, and the concentration of the precursor solution is controlled to control the tin selenide nanosheets so as to drive growth under the action of spiral dislocation. The method is simple to operate and low in cost; and the spiral laminar tin selenide nanosheets have spiral periodicity with atom-level thickness.