Multi-state Gallium Antimony-Stin Selenide Multilayer Nanocomposite Phase Change Material and Its Preparation and Application

A nano-composite, phase-change material technology, applied in the field of microelectronic materials, can solve the problem that the power consumption of phase-change memory devices is not too large, and achieve improved thermal stability, high crystalline and amorphous resistance, The effect of increasing storage density

Inactive Publication Date: 2016-08-24
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, there is still not much research on how to greatly increase the storage density of phase-change memory cells, and how to reduce the power consumption of phase-change memory devices by increasing the low-resistance state resistance of phase-change memory materials.

Method used

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  • Multi-state Gallium Antimony-Stin Selenide Multilayer Nanocomposite Phase Change Material and Its Preparation and Application
  • Multi-state Gallium Antimony-Stin Selenide Multilayer Nanocomposite Phase Change Material and Its Preparation and Application
  • Multi-state Gallium Antimony-Stin Selenide Multilayer Nanocomposite Phase Change Material and Its Preparation and Application

Examples

Experimental program
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Effect test

Embodiment 1

[0049] Ga prepared in this example 30 Sb 70 / SnSe 2 The total thickness of the nanocomposite multilayer phase change film is 50nm, and the specific structure is [Ga 30 Sb 70 (10nm)SnSe 2 (15nm)] 2.

[0050] 1. Clean SiO2 2 / Si(100) substrate surface and back, remove dust particles, organic and inorganic impurities:

[0051] (a) Place the substrate in an ethanol solution, and clean it ultrasonically for 15 minutes to remove dust particles and inorganic impurities on the surface of the substrate;

[0052] (b) The substrate is placed in an acetone solution, and ultrasonically cleaned for 15 minutes to remove organic impurities on the surface of the substrate;

[0053] (c) Place the substrate in deionized water, clean it ultrasonically for 15 minutes, and clean the surface again;

[0054] (d) Take out the substrate, dry it with pure Ar gas, and set it aside.

[0055] 2. Prepared by sputtering method [Ga 30 Sb 70 (10nm)SnSe 2 (15nm)] 2 film preparation

[0056] (a) put...

Embodiment 2

[0065] Ga prepared in this example30 Sb 70 / SnSe 2 The total thickness of the nanocomposite multilayer phase change film is 50nm, and the specific structure is [Ga 30 Sb 70 (25nm)SnSe 2 (25nm)]1.

[0066] 1. Clean SiO2 2 / Si(100) substrate surface and back, remove dust particles, organic and inorganic impurities:

[0067] (a) Place the substrate in an ethanol solution, and clean it ultrasonically for 15 minutes to remove dust particles and inorganic impurities on the surface of the substrate;

[0068] (b) The substrate is placed in an acetone solution, and ultrasonically cleaned for 15 minutes to remove organic impurities on the surface of the substrate;

[0069] (c) Place the substrate in deionized water, clean it ultrasonically for 15 minutes, and clean the surface again;

[0070] (d) Take out the substrate, dry it with pure Ar gas, and set it aside.

[0071] 2. Prepared by sputtering method [Ga 30 Sb 70 (25nm)SnSe 2 (25nm)] 1 film preparation

[0072] (a) put Ga...

Embodiment 3

[0111] Polymorphic gallium antimony-tin selenide multilayer nanocomposite phase change material, Ga 30 Sb 70 / SnSe 2 Nanocomposite multilayer phase change films made of SnSe 2 thin film and Ga 30 Sb 70 The films are alternately arranged into a multilayer film structure, in which the SnSe 2 The thickness of the film is 5nm, Ga 30 Sb 70 The thickness of the film is 5nm; it consists of 5 layers of periodically repeating structure, Ga 30 Sb 70 / SnSe 2 The total thickness of the nanocomposite multilayer phase change film is 50nm, Ga 30 Sb 70 / SnSe 2 The nanocomposite multilayer phase change film has three storage states.

[0112] The multi-state gallium antimony-tin selenide multilayer nanocomposite phase change material was prepared by magnetron sputtering method. 2 / Si(100) substrate, with Ga 30 Sb 70 and SnSe 2 As the sputtering target, Ar gas was used as the sputtering gas to alternately deposit multiple layers of SnSe 2 thin film and Ga 30 Sb 70 Thin film, d...

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Abstract

The invention relates to a polymorphic gallium antimony-tin selenide multilayer nano-composite phase change material and preparation and application of the polymorphic gallium antimony-tin selenide multilayer nano-composite phase change material. For a Ga30Sb70 / SnSe2 nano-composite multilayer phase change film, SnSe2 films and Ga30Sb70 films are arranged alternately to form a multilayer-film structure, wherein the thickness of each SnSe2 film is between 5 nm and 35 nm, and the thickness of each Ga30Sb70 film is between 5 nm and 35 nm; the total thickness of the Ga30Sb70 / SnSe2 nano-composite multilayer phase change film is between 50 nm and 70 nm, and the Ga30Sb70 / SnSe2 nano-composite multilayer phase change material is prepared with a magnetron sputtering method and can be applied to high-density phase change random access memories with polymorphic performance. Compared with the prior art, the material has the multistage phase change characteristic, and the memory density of the PCRAM can be greatly improved; the material has higher crystalline state and amorphous state resistance, and operation power consumption of the PCRAM can be reduced; compared with a traditional phase change memory material, heat stability is improved, and crystallization speed is increased.

Description

technical field [0001] The invention relates to the technical field of microelectronic materials, in particular to a Ga 30 Sb 70 / SnSe 2 Nanocomposite multilayer phase change thin film material and its preparation method and application. Background technique [0002] Among various new types of memory, Phase Change Random Access Memory (PCRAM) has been recognized as one of the most promising memories of the next generation. It may replace flash memory in the future because it occupies a larger market than the current one. FLASH is much faster and is easily scaled down to a smaller size, capable of more than 100 million times of erasing and writing. PCRAM has the advantages of small storage unit size, non-volatility, long cycle life, good stability, low power consumption, and strong embeddability, especially in the miniaturization of device feature size, which is also its alternative The most powerful advantage of FLASH. In addition, the manufacturing process of PCRAM is ...

Claims

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Application Information

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IPC IPC(8): H01L45/00B82Y30/00B82Y40/00
Inventor 翟继卫冯潇依胡益丰
Owner TONGJI UNIV
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