Two-dimensional tin selenide nanosheet-based surface enhanced Raman substrate and production method thereof

A technology of surface-enhanced Raman and tin selenide, applied in Raman scattering, measuring devices, instruments, etc., can solve the problems of weak Raman enhancement effect, and achieve cheap equipment, obvious Raman enhancement effect, and simple preparation method Effect

Inactive Publication Date: 2017-04-05
SHANDONG NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the problem that the Raman enhancement effect of most graphene-like two-dimensional layered materials is relatively weak, the present invention provides a surface-enhanced Raman substrate based on two-dimensional

Method used

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  • Two-dimensional tin selenide nanosheet-based surface enhanced Raman substrate and production method thereof
  • Two-dimensional tin selenide nanosheet-based surface enhanced Raman substrate and production method thereof
  • Two-dimensional tin selenide nanosheet-based surface enhanced Raman substrate and production method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] Step 1, will be covered with 300nm SiO 2 The Si substrate of the oxide layer was cut into small square pieces of 1 cm×1 cm as the substrate.

[0046] Step 2, at room temperature, use an ultrasonic cleaning machine to clean the substrate in step 1, with an ultrasonic power of 180W and a frequency of 40kHz, and then use acetone, ethanol, and deionized water for ultrasonic cleaning in sequence, and the ultrasonic cleaning time is 20 minutes each time. Blow dry the surface of the substrate with nitrogen gas for use.

[0047] Step 3, cover the bulk SnSe with 5cm×2cm scotch tape 2 On the surface of the material, gently apply mechanical pressure, and then quickly tear it off, so that a layer of SnSe sticks on the surface of the tape 2 flakes, use another piece of tape of the same size, with SnSe 2 The position of the sheet tape is pasted, and quickly torn off after the pasting, and then the second piece of tape is repeatedly pasted, quickly torn off, and the above operation...

Embodiment 2

[0064] Step 1, will be covered with 300nm SiO 2 The Si substrate of the oxide layer was cut into small square pieces of 1 cm×1 cm as the substrate.

[0065] Step 2, at room temperature, use an ultrasonic cleaning machine to clean the substrate in step 1, with an ultrasonic power of 180W and a frequency of 40kHz, and then use acetone, ethanol, and deionized water for ultrasonic cleaning in sequence, and the ultrasonic cleaning time is 20 minutes each time. Blow dry the surface of the substrate with nitrogen gas for use.

[0066] Step 3, cover the bulk SnSe with 5cm×2cm scotch tape 2 On the surface of the material, gently apply mechanical pressure, and then quickly tear it off, so that a layer of SnSe sticks on the surface of the tape 2 flakes, use another piece of tape of the same size, with SnSe 2 The position of the sheet tape is pasted, and quickly torn off after the pasting, and then the second piece of tape is repeatedly pasted, quickly torn off, and the above operation...

Embodiment 3

[0074] Step 1, will be covered with 300nm SiO 2 The Si substrate of the oxide layer was cut into small square pieces of 1 cm×1 cm as the substrate.

[0075] Step 2, at room temperature, use an ultrasonic cleaning machine to clean the substrate in step 1, with an ultrasonic power of 180W and a frequency of 40kHz, and then use acetone, ethanol, and deionized water for ultrasonic cleaning in sequence, and the ultrasonic cleaning time is 20 minutes each time. Blow dry the surface of the substrate with nitrogen gas for use.

[0076] Step 3, cover the bulk SnSe with 5cm×2cm scotch tape 2On the surface of the material, gently apply mechanical pressure, and then quickly tear it off, so that a layer of SnSe sticks on the surface of the tape 2 flakes, use another piece of tape of the same size, with SnSe 2 The position of the sheet tape is pasted, and quickly torn off after the pasting, and then the second piece of tape is repeatedly pasted, quickly torn off, and the above operation ...

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Abstract

The invention discloses a two-dimensional tin selenide nanosheet-based surface enhanced Raman substrate and a production method thereof. The surface enhanced Raman substrate sequentially comprises a silicon layer, a silicon dioxide layer and a tin selenide layer from bottom to top, wherein the tin selenide layer is a monolayer tin selenide nanosheet or a few-layer tin selenide nanosheet. The method comprises the following steps: stripping the SnSe2 nanosheet with a certain thickness from a block SnSe2 material, and transferring the SnSe2 nanosheet onto the silicon dioxide layer of a substrate material, wherein the substrate material is a silicon dioxide layer-containing silicon sheet. The surface enhanced Raman substrate has the advantages of obvious Raman enhancement effect, high repeatability and low cost, and the production method has the advantages of simplicity and easiness in control.

Description

technical field [0001] The application belongs to the field of laser Raman and molecular recognition, and relates to a novel surface-enhanced Raman substrate and a preparation method, in particular to a two-dimensional surface-enhanced Raman scattering substrate material based on a chemical enhancement mechanism. Background technique [0002] Raman scattering spectroscopy is a powerful molecular detection method to study the structure of matter, electronic energy level transitions and characteristic groups by using the changes in frequency, intensity and polarization properties due to scattering by molecules when light passes through the medium. However, due to the very small scattering cross section of Raman scattering, the Raman scattering signal is usually relatively weak, which is not conducive to the qualitative analysis of trace substances. The surface-enhanced Raman scattering (SERS) effect refers to the phenomenon that the Raman scattering signal is improved and enha...

Claims

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Application Information

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IPC IPC(8): G01N21/65
CPCG01N21/658
Inventor 刘玫石颖
Owner SHANDONG NORMAL UNIV
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