Memory device with switching glass layer
A memory, memory cell technology, used in static memory, read-only memory, digital memory information and other directions
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[0021] In the following detailed description, reference is made to various specific embodiments of the invention. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It is to be understood that other embodiments may be utilized, and various structural, logical, and electrical changes may be made without departing from the spirit or scope of the present invention.
[0022] As used in the following description, the term "substrate" may include any supporting structure, including but not limited to, a semiconductor substrate having an exposed substrate surface. A semiconductor substrate is understood to include silicon-on-insulator (SOI), silicon-on-sapphire (SOS), doped and undoped semiconductors, epitaxial silicon layers supported by a base semiconductor pedestal, and other semiconductor structures. When referring to a semiconductor substrate or wafer in the following description, previous processes may have been u...
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