The formulation and methods of glass-
ceramic Substrate materials, which consisted essentially of the micro-
powder SiO2 and the BSG materials containing four kinds of oxides:60-85wt úÑ SiO 2 ,15-35wt úÑ B 2 O 3 , 0.1-2.5wt úÑ K 2 O ú¼ 0.1-2.5wt%Na 2 O ,where the BSG materials occupied 55-90 wt% and SiO 2 occupied 10-45wt%.According to formulation, after the chemically pure SiO 2 , B 2 O 3 , K 2 O, Na 2 O were ball-milled, desiccated and mixed in the
platinum crucible, the mixture was heat-preserved and stirred at a temperature between about 1300 and 1550 deg.C , which made its crystallochemical reaction sufficiently. After pouring the melt-out glass in
crucible into the water to quench,
offspring of transparent broken glass which had been hydroball-milled is gained as the glass dust to synthesize the BSG materials. In terms of formulation the BSG material and the chemically pure SiO 2 were ball-milled, blended and shaped granule finally. When reaction was carried out in a constant-temperature at 850-900 deg.C, the glass-
ceramic Substrate materials were prepared as the above-indicated aspect of the invention. The capability index of the glass-
ceramic substrate materials was: the
dielectric constant ªŠ < 4(1 MHz), the
dielectric losses tan ª€íœ 0.001 (1MHz), the insulation resistivity ªÐ í¦ 10 13 ª© cm, holdoff
voltage Intensity E í¦ 5í‡10 7 V / m, the bending resistance intensity í¦ 200 Mpa, the
thermal expansion coefficient alphaíÍ 3.6 í‡ s 10 -6 / deg.C, the
thermal conductivity k íÍ 1 W / m*K. The prepared glass-
ceramic Substrate materials can meet the request of the medium / low temperature co-fired industrialization with many
layers wirings and the
microelectronics assembling techniques of modern
integrated circuit techniques.