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62 results about "Amorphism" patented technology

An Amorphism, in chemistry, crystallography and, by extension, to other areas of the natural sciences is a substance or feature that lacks an ordered form. In the specific case of crystallography, an amorphic material is one that lacks long range (significant) crystalline order at the molecular level. In the history of chemistry, amorphism was recognised even before the discovery of the nature of the exact atomic crystalline lattice structure. The concept of amorphism can also be found in the fields of art, biology, archaeology and philosophy as a characterisation of objects without form, or with random or unstructured form.

Amorphous transparent conductive film, sputtering target as its raw material, amorphous transparent electrode substrate, process for producing the same and color filter for liquid crystal display

A transparent conductive film of low resistivity excelling in transparency and etching properties; a sputtering target as its raw material; an amorphous transparent electrode substrate having the transparent conductive film superimposed on a substrate; and a process for producing the same. In particular, an amorphous transparent conductive film comprising at least indium oxide and zinc oxide, which contains at least one third metal selected from among Re, Nb, W, Mo and Zr and satisfies the formulae: 0.75≦[In] / ([In]+[Zn])≦0.95 (1) 1.0×10−4≦[M] / ([In]+[Zn]+[M])≦1.0×10−2 (2) wherein [In][Zn] and [M] represent the atomicity of In, atomicity of Zn and atomicity of third metal, respectively. This amorphous transparent conductive film exhibits amorphism ensuring excellent etching processability and exhibits low specific resistance and high mobility.
Owner:IDEMITSU KOSAN CO LTD

Femtosecond laser amorphism fine machining method for amorphous alloy

The invention relates to a non-crystal fine processing method which uses femtosecond laser to process non-crystal alloy, wherein said method uses femtosecond laser to make hole, etch, and cut the non-crystal alloy, while the impulse energy density of femtosecond laser is 50-100H / cm2 and the impulse width is 45-100fs in holing; the impulse energy density is 3-15J / cm2, the impulse width is 45-100fs, and the scanning speed is 100-200 mum / s in etching line; the impulse energy density is 75-110J / cm2, the impulse width is 45-100fs, and the scanning speed is 100-200 mum / s in cutting. The invention can realize sub-micron processing accuracy, without crystallization in etching area.
Owner:HUAZHONG UNIV OF SCI & TECH

Intensive-network self-optimizing switching method

The invention provides an intensive-network self-optimizing switching method and belongs to the technical field of radio communication. According to the architecture characteristics of intensiveness, hierarchy and amorphism of an intensive heterogeneous honeycomb network and switching characteristics of high frequency and low performance, the intensive-network self-optimizing switching method includes firstly sensing passing-by rate, moving speed, acceptance and idle degrees of a target honeycomb of an MS (mobile station), acquiring of tendency of the MS to the target honeycomb by the passing-by rate and the speed based on FL (fuzzy logic), and acquiring affinity of the honeycomb towards new users by the acceptance and the idle degrees, and self-adaptively adjusting switching parameters based on Q-Learning algorithm by taking tendency and affinity as input and resource utilization rate, call drop rate, switching failure rate and ping-pong switching rate as instant awards, so as to optimize the switching failure rate, the ping-pong switching rate and the call drop rate. Compared with the prior art, the intensive-network self-optimizing switching method can remarkably improve high-switching failure rate, ping-pong switching rate and call drop rate of the MS under the intensive heterogeneous network.
Owner:CHONGQING UNIV OF POSTS & TELECOMM

Method for preparing magnesium diboride superconductive wire and strip

The invention relates to a method for preparing a magnesium boride superconducting line and belt material. The preparation method is that a. preparation of precursor powder: high magnesium diboride MgBx powder is taken as the precursor powder, wherein, x is more than or equal to 4 and less than or equal to 12; or magnesium powder and amorphism boron powder are mixed according to 1:3-20 of stoichiometric ratio between magnesium and boron to form the precursor powder; b. putting into a magnesium pipe: the precursor powder is put into a magnesium pipe, compacted and sealed; c. putting into a canning pipe: the magnesium pipe is put into a metal canning pipe and is sealed after the metal canning pipe is fully filled with metal powder as a barrier layer; or the magnesium pipe is first put into a barrier layer metal pipe and then is put into the metal canning pipe and the metal canning pipe is sealed; d. moulding treatment: the metal canning pipe is produced into line and belt material; e. heat treatment: the metal canning pipe is put into a pipe typed furnace and under the protection of argon, the temperature is raised to 700-1200 DEG C by the speed of 1-10 DEG C / minute, preserved for 1-30 hours and then cooled to room temperature. The MgB2 superconducting line and belt material prepared by the method has high compactability, good grain connectivity and even cross section.
Owner:SOUTHWEST JIAOTONG UNIV

Amorphous tellurium-cadmium-mercury/crystalline silicon heterojunction infrared-detector and manufacturing method thereof

The invention relates to an amorphous tellurium-cadmium-mercury/crystalline silicon heterojunction infrared-detector, which is characterized by being composed of a crystalline silicon substrate, amorphous tellurium-cadmium-mercury, a first metal electrode and a second metal electrode, wherein the amorphous tellurium-cadmium-mercury and the crystalline silicon substrate form heterojunction, the first metal electrode is connected with the amorphous tellurium-cadmium-mercury, and the second metal electrode is connected with the crystalline silicon substrate. The preparation process comprises the following steps of substrate cleaning, amorphous tellurium-cadmium-mercury film preparation, photosensitive surface forming, metal electrode preparation and package test; or substrate cleaning, second metal electrode preparation, amorphous tellurium-cadmium-mercury film preparation, photosensitive surface forming, first metal electrode preparation and package test. The amorphous semiconductor material has no selectivity for the substrate, the lattice matching performance between materials forming heterojunction is better, and the significant photoelectric response exists. The optimum working temperature of the detector is close to room temperature, two stages of semiconductors are utilized for refrigeration, and the weight, the power consumption and the manufacturing cost of the infrared detector assembly are reduced.
Owner:KUNMING INST OF PHYSICS

Nanometer silicon hetero-junction bidirectional tunneling diode

InactiveCN101257050AWith differential negative resistance effectSequential resonance tunnelingDiodeHeterojunctionDifferential coefficient
The present invention discloses a nano silicon hetero-junction bidirectional tunnel diode which includes a monocrystalline silicon substrate, a electric pole, a nano silicon thin film deposited at the monocrystalline silicon substrate includes nano silicon grain embedded in the hydrogenization amorphism silicon organize, the nano silicon thin film and the heterojunction structure configured with the nano silicon monocrystalline silicon, which is characterized in that the grain diameter of the nano silicon grain is 4-6nm, and the grain diameter sizes of different nano silicon grain are approach. The present invention has differential coefficient dynatron effect caused by the forward bias tunnel, meanwhile also has sequence resonance tunnel phenomenon of quantization energy level of multi- nanocrystal under back bias voltage, in addition breakdown reverse voltage is improved greatly to arrive more than -37V.
Owner:韦文生

A solid-state electrolyte, a method for making the same, and an all-solid-state lithium battery

The invention relates to a solid electrolyte. The solid electrode comprises a substrate, and the substrate is a garnet type fast ion conductor Li7M3Zr2O12 or Li5Ta3M2O12, wherein the M can be one or more components selected from La, Al, Sr, Sc, Cr, Ba, Fe, Mo, and Y. The surface of the substrate is covered by a surface modification layer which can carry out plastic deformation, and the surface modification layer is made of non-crystal lithium silicate, lithium sulfate, or lithium tungstate. The invention also relates to a preparation method of the solid electrolyte. The solid electrolyte is covered by a surface modification layer made of non-crystal lithium silicate, lithium sulfate or lithium tungstate, and the non-crystal lithium silicate, lithium sulfate, and lithium tungstate are all flexible, can carry out plastic deformation, and all have a high ionic conductivity; so the surface modification layer can fully carry out surface contact with the garnet type fast ion conductor, thus the interfaces between the crystals in the solid electrolyte and the interfaces between the electrodes and the solid electrolyte are all improved, the interface impedance and grain resistance are low, and the durability and circulation performance are both prominently improved.
Owner:HUAWEI TECH CO LTD

Reversably removal lithium embedded material for cathode of lithium ion battery and its preparation

The chemical formula of the material is LixSiNy, or LixSiO2Ny, 0<x<9, 0<y<5, which possesses the network structure of Li-Si-O-N or Li-Si-N, and exists in the status of compound., After the first de-lithium processing, the material keeps in the amorphism status. According to the mechanical chemical method, the produced Li3N is mixed with the nanometer or micrometer powder. In the inert atmosphere, the convertible de-embedded lithium material is generated after the grinding processing. The Li3SiNy is produced (1.67<y<3), after 16 times recycling, the capability conability conservation rate is 80%.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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