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Planarization method of magnetic tunnel junction

A technology of a magnetic tunnel junction and a planarization method, which is applied in the field of magnetic random access memory manufacturing, can solve the problems of roughness improvement, deterioration, and influence on the magnetoresistance performance of the magnetic tunnel junction, and achieves excellent magnetic stability and large magnetoresistance performance. Effect

Active Publication Date: 2018-10-23
SHANGHAI CIYU INFORMATION TECH
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Problems solved by technology

[0006] Usually, the CoFeB in the newly grown MTJ sandwich structure is amorphous and the surface is relatively rough. Although the CoFeB material can be transformed from an amorphous state to a certain degree of body-centered cubic crystal structure by high-temperature annealing, its surface The roughness of the magnetic tunnel junction will not be improved, or even worse, which will greatly affect the magnetoresistance performance of the magnetic tunnel junction.

Method used

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Embodiment 1

[0044] This embodiment provides a method of bombarding the iron-cobalt-boron (CoFeB) surface in the magnetic tunnel junction with low-energy plasma during the physical deposition of the MTJ magnetic tunnel junction to improve its flatness and crystal structure, ensuring atomic-level smoothness degree of MTJ multilayer film deposition. The process method is a new planarization method in the manufacturing process of STT-MRAM, which is suitable for spin-transfer torque magnetic random access memory (STT-MRAM) containing N (N≥1) layers of iron-cobalt-boron (CoFeB) , including IN-PLANE and PERPENDICULAR STT-MRAM.

[0045] The planarization method includes the following steps: Immediately after the deposition of the amorphous CoFeB layer, the amorphous layer is bombarded with low-energy ions to provide kinetic energy for the surface atom diffusion to move from high points to low valleys, thereby achieving planarization the goal of.

[0046] Such as Figure 3-7As shown, in the abo...

Embodiment 2

[0048] This embodiment provides a method for preparing a magnetic tunnel junction multilayer film, which is suitable for a BUTTOM-PINNED magnetic tunnel junction multilayer film. The multilayer film structure includes:

[0049] A magnetic reference layer above the seed layer, the magnetic reference layer has magnetic anisotropy with a fixed magnetization direction, and the magnetic reference layer contains an iron-cobalt-boron layer.

[0050] a tunnel barrier layer above the magnetic reference layer;

[0051] The magnetic memory layer above the tunnel barrier layer has magnetic anisotropy with a variable magnetization direction, and the magnetic memory layer contains one or two layers of iron-cobalt-boron layers.

[0052] The composition of the above iron cobalt boron layer is Co x Fe y B 1-x-y , wherein the range of x is 15%-40%, the range of y is 35%-70%, and the concentration of boron is 10%-40%.

[0053] The preparation method of this multilayer film comprises the foll...

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Abstract

The invention provides a planarization method of a magnetic tunnel junction. The magnetic tunnel junction comprises an amorphous iron-cobalt-boron layer. The method is characterized in that the methodcomprises the step that ion or plasma beams are adopted to bombard the amorphous iron-cobalt-boron layer. According to the planarization method of the invention, low-power ion or plasma beam bombardment is adopted, so that surface atoms can acquire a certain kinetic energy but cannot escape, and therefore, a material can be shifted from rough protrusions to troughs, and an MTJ (magnetic tunnel junction) multilayer film deposition of atomic-level smoothness can be obtained.

Description

technical field [0001] The present invention relates to the technical field of manufacturing Magnetic Random Access Memory (MRAM, Magnetic Radom Access Memory), in particular to a method for planarizing a Magnetic Tunnel Junction (MTJ, Magnetic Tunnel Junction). Background technique [0002] In recent years, MRAM using the magnetoresistance effect of the magnetic tunnel junction (MTJ) is considered to be the future solid-state non-volatile memory, which has the characteristics of high-speed reading and writing, large capacity and low energy consumption. Ferromagnetic MTJ is usually a sandwich structure, which has a magnetic memory layer, which can change the magnetization direction to record different data; an insulating tunnel barrier layer in the middle; a magnetic reference layer, located on the other side of the tunnel barrier layer, which The direction of magnetization remains unchanged. When the direction of the magnetization vector between the magnetic memory layer a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/14H10N50/10H10N52/01
CPCH10N52/01H10N50/10
Inventor 陈峻麻榆阳张云森郭一民肖荣福
Owner SHANGHAI CIYU INFORMATION TECH
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